Untitled
Abstract: No abstract text available
Text: l^asu ^E.mi-(2ond\jLcto\ (inc. C/ 4/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)237-6005 FAX: (973) 376-8960 BLY87C VHP power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,
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BLY87C
OT120A
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Untitled
Abstract: No abstract text available
Text: * SYNERGY REGISTERED HEX TTL-TO-PECL SY10H606 SY100H606 SEMICONDUCTOR DESCRIPTION FEATURES • Differential 50fì ECL outputs ■ Choice between differential PECL or TTL clock input ■ Single +5V power supply ■ V bb output for single-ended use ■ Multiple power and ground pins to minimize noise
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SY10H606
SY100H606
MC10H/100H606
28-pin
SY10/100H
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Untitled
Abstract: No abstract text available
Text: * SYNERGY REGISTERED HEX TTL-TO-PECL SY10H606 SY100H606 SEMICONDUCTOR DESCRIPTION FEATURES • Differential 50fì ECL outputs ■ Choice between differential PECL or TTL clock input ■ Single +5V power supply ■ V bb output for single-ended use ■ Multiple power and ground pins to minimize noise
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SY10H606
SY100H606
MC10H/100H606
28-pin
SY10/100H
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Untitled
Abstract: No abstract text available
Text: V NEW VP Series Lug/Snap-in Terminal Type fil!A/£ilz:ll! , Withstanding Vibration(i5fti|i]) FEATURES 1. Designed for withstanding vibration. 2. Suited for washing machines and etc. S A M X O ^^ 10 0 p F 450^, 1 ^SAM XCW 8 2 0 p F 8 Q^ S A M X O ls i S A M X o^.
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820pF
10OpF
56000pF
120Hz,
35x35
30x40
35x45
35x30
25x40
25x50
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IS0108
Abstract: VDE884 Burr Brown 3500
Text: - 398 — m m m V -F =l> /< IS 0 1 0 8 / I S 0 1 0 9 S Ü Ï sl2# a o * Œ — & Burr B r o w n - H * Î ! ! 3 y ^ - ? i | È t * ' y 5 * r t * L f c « » a y - i ,n v 5 V U 7 r b - V X fc - £ ïfm .W L < D V - F ^ V ' S — ? Z T T L 1 / ^ ; U • 3 V ^ f - y ; i / )
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08/IS01
-AC1500Vrms
IS0108,
AC3500Vrms
IS0109,
200ppm
1500Vrms
IS0108)
3500Vrms
IS0109)
IS0108
VDE884
Burr Brown 3500
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J 5027 r
Abstract: LD E 5027 BU 5027
Text: / = Ä 7 T S G S -T H O M S O N # ^ » í m [ i r a M Q MK5027 e s SS7 SIGNALLING LINK CONTROLLER • CMOS ■ FULLY COM PATIBLE W ITH BOTH 8 OR 16 BIT SYSTEMS ■ SYSTEM CLOCK RATE TO 10MHz ■ DATA RATE UP TO 2.5Mbps FO R S S 7 PROTO COL PROCESSING , 7Mbps FOR TRANSPAR
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MK5027
10MHz
48-PIN
MK5025)
MK5032)
CONTR00
MK5027
K5027
J 5027 r
LD E 5027
BU 5027
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Untitled
Abstract: No abstract text available
Text: “H Y• U NDAI 1» 11 1 * * 1 1 512K x 8 . b jt CM 0S Series 5 0 v .HY29F040 0 n |y S e c t o r E ra s e F |a s h M e m 0 ry PRELIMINARY DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512K x 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1
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HY29F040
1FA02-01-MAY95
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2SA1115
2SA1235
2SA1235A
2SA1282
2SA1282A
2SA1283
2SA1284
2SA1285
2SA1285A
2SA1286
M52777SP
M54630P
M38881M2
m59320
57704L
M38173M6
SF15DXZ
M34236
m37204m8
54630p
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Untitled
Abstract: No abstract text available
Text: T H IS DRAWING IS C O P Y R IG H T R E L E A S E D FOR P U B L I C A T I O N UN PU BLISH ED . BY AMP 19 IN C O R P O R A T E D .A L L LOC 1338 + 0 .1 REVISIONS 3CJE J R IG H TS RESERVED. -o B DATE DWN APVD RELEASED F J O O - 0 2 1 3-98 12 / F E B / '9 8 T.K
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FJOO-0038-00
25/MAR/
C10P0S.
MTOTTO---------------1123688
AMP1470-19
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS SH EET TE A1097TV Speech and loudspeaker amplifier IC with auxiliary inputs/outputs and analog multiplexer Objective specification Supersedes data of 1998 Feb 16 File under Integrated Circuits, IC03 Philips Semiconductors 1998 Jun 11 PHILIPS
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A1097TV
SCA57
415102/1200/02/pp28
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Untitled
Abstract: No abstract text available
Text: - 3 3 - 1S> RX2731B90W t PHILIPS INTERNATI ON AL ShE D • 7110fl2b 00MbS30 106 PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power amplifier with a frequency range o f 2.7 to 3.1 GHz.
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RX2731B90W
7110fl2b
00MbS30
T-33-15
0D4b534
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CO52
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS3VS-14A HIGH-SPEED SWITCHING USE FS3VS-14A OUTLINE DRAWING :<1 Dimensions in mm 10.5MAX. - 4-5 -w \ .1.3 « ""~1 S= T 0 Ì9 ^ r uM -4 r 0. f . A i ! ii 1 T / . 700V
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FS3VS-14A
O-220S
CO52
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BC 1078
Abstract: MHT-18
Text: MSHT—252—037—325 METAL AirBorn Board (Narrow Footprint) to Cable MQHT-2 2 2 -0 3 7 -2 6 1 - 4 1 WS (METAL) .050" 9 thru 51 Contacts Low Profile Board Mount High Temperature Low Profile Cable High Temperature MSHT MQHT RECEPTACLE PLUG SIZE CONTACT ROWS
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M83513,
CTMA003
BC 1078
MHT-18
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Untitled
Abstract: No abstract text available
Text: 8 DRAWING MADE THIS IN THIRD DRAWING 7 ANGLE IS UNPUBLISHED. COPYRIGHT 4 P RO JE C TI ON 19 LOC RELEASED FOR P U B L I C A T I O N BY AMP INCORPORATED. ALL D IST REVISIONS 25 AD INTERNATIO NAL RIGHTS RESERVED. ZONE LTR K 1 . 0 4 ± 0 . 05 [ . 0 4 1 ± . 002]
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175S-3
61ji/dsk02/dep
t1725/arnp
20j443/ediTimqd
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Untitled
Abstract: No abstract text available
Text: V NEW QP Series Lug/Snap-in Terminal Type fil!A/£ilz:ll! , Withstanding Vibration(i5fti|i]) FEATURES 1. Designed for withstanding vibration. 2. Suited for washing machines and etc. ^SAMXCW S A M X O ^^ 10OpF 450^, 1 820pF 8Q^ SAMXOlsi 10OpF 450^ S A M X o^.
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10OpF
820pF
120Hz,
30x40
30x50
35x35
120Hz
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IRF9520N
Abstract: 12-II
Text: <ft*#:. • * .-'»t i 1 ‘ . ,-v PD -9.1521 International IO R Rectifier IRF9520N PRELIMINARY H E X FE T Pow er M O S FE T • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
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IRF9520N
O-22YEAR
IRF9520N
12-II
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Untitled
Abstract: No abstract text available
Text: V NEW GT Series +105°C, High Ripple Current nt£iBZ , Long Life Assurance(HiPnp). Low Im pedance^Pltfipp) FEATURES 1. Low impedance for high frequency 2. Long life:4000~10000 hours at 105% SPECIFICATIONS GT Item Performance Characteristics Operating Temperature Range
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120Hz,
18x20
16x30
16x35
16x20
18x30
16x25
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irf p 1806
Abstract: No abstract text available
Text: International Rectifier IÖR PD - 5.059B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-Fast Speed IGBT Featu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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GA400TD60U
irf p 1806
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Untitled
Abstract: No abstract text available
Text: International I R Rectifier PD - 9.1456D IRG4BC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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1456D
IRG4BC40U
O-22QAB
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS SHEET TE A1098TV Speech and handsfree IC 1998 Jun 12 Preliminary specification Supersedes data of 1998 Feb 12 File under Integrated Circuits, IC03 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification Speech and handsfree IC
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A1098TV
SCA60
415102/1200/02/pp36
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CD4080
Abstract: 190AH
Text: PD 9.1698A In terna tional IQR Rectifier IRL3502 PRELIMINARY HEXFET Power MOSFET • • • • Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V ^ D S o n = 0 . 0 0 7 Í 2
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IRL3502
CD4080
190AH
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GA200TD120U
Abstract: No abstract text available
Text: International IOR Rectifie f PD - 5.061 B P RE LI MI NAR Y GA200TD120U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V ces = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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GA200TD120U
GA200TD120U
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GA75TS60U
Abstract: No abstract text available
Text: International I«R Rectifier PD -5.050B PR E LIM IN A R Y "HALF-BRIDGE” IGBT INT-A-PAK GA75TS60U Ultra-Fast Speed IGBT F eatu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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GA75TS60U
GA75TS60U
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EI - 33A TRANSFORMER
Abstract: No abstract text available
Text: PD - 9.1613 International lö R Rectifier IRF7413A PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V qss = 30V
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IRF7413A
EI - 33A TRANSFORMER
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