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Diodes Incorporated ZXMN10B08E6TC MOSFET N-CH 100V 1.6A SOT26
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ZXMN10B08E6TC	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.20875	Buy Now

ZXMN10B08E6TC Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ZXMN10B08E6TC		Zetex Semiconductors	100V N-CHANNEL ENHANCEMENT MODE MOSFET		Original	PDF

ZXMN10B08E6TC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
DS33570 Abstract: 10b8 SOT23-6 Text: ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS 100V Features and Benefits Max ID TA = +25°C (Note 6) 1.9A 1.68A Max RDS(on) 230mΩ @ VGS = 10V 300mΩ @ VGS = 4.5V Description and Applications This new generation TRENCH MOSFETs from Diodes utilizes a	Original	PDF	ZXMN10B08E6 AEC-Q101 DS33570 10b8 SOT23-6
10b8 SOT23-6 Abstract: No abstract text available Text: ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.230 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This	Original	PDF	ZXMN10B08E6 OT23-6 OT23-6 ZXMN10B08E6TA 10b8 SOT23-6
AP3039AM Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)	Original	PDF	2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
10b8 SOT23-6 Abstract: 10B8 ZXMN10B08E6 ZXMN10B08E6TA ZXMN10B08E6TC Text: ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.230 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This	Original	PDF	ZXMN10B08E6 OT23-6 OT23-6 ZXMN10B08E6TA ZXMN10B08E6Tadderton 10b8 SOT23-6 10B8 ZXMN10B08E6 ZXMN10B08E6TA ZXMN10B08E6TC
10B8 Abstract: 10b8 SOT23-6 ZXMN10B08E6 ZXMN10B08E6TA ZXMN10B08E6TC MARKING TH SOT23-6 MOSFET Text: ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.230 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This	Original	PDF	ZXMN10B08E6 OT23-6 OT23-6 ZXMN10B08E6TA ZXMN10B08E6T00 10B8 10b8 SOT23-6 ZXMN10B08E6 ZXMN10B08E6TA ZXMN10B08E6TC MARKING TH SOT23-6 MOSFET