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DSA0064776.pdf
Manufacturer
Cree
Partial File Text
CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree's CGH55015F2/CGH55015P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
Datasheet Type
Original
ECAD Model
Part Details
Part pricing, stock, data attributes from Findchips.com
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