Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    0.22 UH Search Results

    SF Impression Pixel

    0.22 UH Price and Stock

    Vishay Intertechnologies IMC-1210-22UH-5R98

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IMC-1210-22UH-5R98 14,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Vishay Intertechnologies IMC-1210-22UHTR-5

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IMC-1210-22UHTR-5 6,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Vishay Intertechnologies IMC-121022UH10%

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IMC-121022UH10% 2,809
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Vishay Intertechnologies IMC1210-2.2UH10%

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IMC1210-2.2UH10% 2,291
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Vishay Dale IMC-1210-2.2UH-10%

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IMC-1210-2.2UH-10% 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more 0.22 UH price and stock on Findchips.com

    0.22 UH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GP4060

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.


    Original     		PDF RD07MVS1B 175MHz 520MHz RD07MVS1B RD07MVS1 175MHz) 520MHz) Oct2011 GP4060

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power 2.0+/-0.05 1.0+/-0.05 4.9+/-0.15 FEATURES


    Original     		PDF RD07MVS1 175MHz 520MHz 520MHz 520MHz) 175MHz)

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.


    Original     		PDF RD07MVS1B 175MHz 520MHz RD07MVS1 RD07MVS1B 520MHz

    RD07MVS2

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)


    Original     		PDF RD07MVS2 175MHz 520MHz RD07MVS2 175MHz) 520MHz) Oct2011

    RD07M

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power 2.0+/-0.05 1.0+/-0.05 4.9+/-0.15 FEATURES


    Original     		PDF RD07MVS1 175MHz 520MHz RD07MVS1 175MHz) 520MHz) Oct2011 RD07M

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)


    Original     		PDF RD07MVS2 175MHz 520MHz RD07MVS2 520MHz 175MHz) 520MHz)

    02 diode R-1

    Abstract: 1SV276
    Text: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.22 Ω (typ.) • Small package Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SV276 02 diode R-1 1SV276

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power


    Original     		PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz

    Untitled

    Abstract: No abstract text available
    Text: HC7 Series HIGH CURRENT 7 Power Inductors Description • Surface mount inductors designed for higher speed switch mode applications requiring lower inductance, low voltage and high current • Inductance range from 0.22 uH to 4.81 uH • Current range from 35.8 to 9.8 Amps


    Original     		PDF 500kHz HC7-R20 HC7-R47

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 0.2+/-0.05 (0.22) RD02MUS2 is a MOS FET type transistor 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 specifically designed for VHF/UHF RF power


    Original     		PDF RD02MUS2 175MHz 520MHz RD02MUS2 175MHz, 520MHz 175MHz)

    1SV276

    Abstract: No abstract text available
    Text: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.22 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SV276 1SV276

    1SV276

    Abstract: No abstract text available
    Text: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.22 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 1SV276 1SV276

    Untitled

    Abstract: No abstract text available
    Text: HC7 Series HIGH CURRENT 7 Power Inductors Description • Surface mount inductors designed for higher speed switch mode applications requiring lower inductance, low voltage and high current • Inductance range from 0.22 uH to 4.81 uH • Current range from 35.8 to 9.8 Amps


    Original     		PDF 500kHz HC7-R20 HC7-R47

    mos 4069

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power


    Original     		PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz Oct2011 mos 4069

    RD02MUS2

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 0.2+/-0.05 (0.22) RD02MUS2 is a MOS FET type transistor 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 specifically designed for VHF/UHF RF power


    Original     		PDF RD02MUS2 175MHz 520MHz RD02MUS2 175MHz, 520MHz 175MHz) 520MHz) Oct2011

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION RD02MUS1 is a MOS FET type transistor 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) OUTLINE specifically designed for VHF/UHF RF power


    Original     		PDF RD02MUS1 175MHz 520MHz RD02MUS1 175MHz) 520MHz) 175MHz, 520MHz

    Untitled

    Abstract: No abstract text available
    Text: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.22 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 1SV276

    Untitled

    Abstract: No abstract text available
    Text: HC7 Series HIGH CURRENT 7 Power Inductors Description • Surface mount inductors designed for higher speed switch mode applications requiring lower inductance, low voltage and high current • Inductance range from 0.22 uH to 4.81 uH • Current range from 35.8 to 9.8 Amps


    Original     		PDF 500kHz HC7-R20 HC7-R47

    RD07MVS2

    Abstract: RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05


    Original     		PDF RD07MVS2 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS2 RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434

    RD04HMS2

    Abstract: JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
    Text: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING


    Original     		PDF RD04HMS2 175MHz, 950MHz, 14dBtyp. 950MHz UHF/890-950MHz RD04HMS2 JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445

    RD04HMS2

    Abstract: Handling Precautions for MOSFET 043mm 14dBtyp
    Text: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING


    Original     		PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz Handling Precautions for MOSFET 043mm 14dBtyp

    Untitled

    Abstract: No abstract text available
    Text: 1SV284 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV284 VCO for V/UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.22 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SV284

    1SV284

    Abstract: No abstract text available
    Text: 1SV284 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV284 VCO for V/UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.22 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SV284 1SV284

    Untitled

    Abstract: No abstract text available
    Text: A ew iii WITH EPOXY COATED AL0307 SERIES AL0410 SERIES Electrical Parameters: • Electrical Parameters: A L 0 3 0 7 -T Y P E Standard SPC L UH Test Freq {MHz) Q Min -R22M 0.22 25.2 45 150 0.20 400 -R27M 0.27 25.2 45 150 0.22 380 -R33M 0.33 25.2 45 150 0.24


    OCR Scan     		PDF AL0307 AL0410 -R22M -R27M -R33M -R39M -R47M -R56M -R68M -R82M