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    IR E78996

    Abstract: 6J450 T45 diode 6H450 E78996 rectifier module E78996 diode FK 330
    Text: INTERNATIONAL RECTIFIER bSE J> Wt 4ÛSS452 001b3E3 750 • INR Bulletin E27113 International IxqrIRectifier IRFK6H450,IRFK6J450 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996.


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    SS452 001b3E3 E27113 IRFK6H450 IRFK6J450 E78996. IR E78996 6J450 T45 diode 6H450 E78996 rectifier module E78996 diode FK 330 PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1215 DALLAS SEMICONDUCTOR DS1215 Phantom Time Chip FEATURES PIN ASSIGNMENT • K eeps track of hundredths o f seconds, seconds, min­ utes, hours, days, d ate of th e m onth, m onths, and years • Adjusts for m onths with fe w er than 31 days • Leap y e a r autom atically corrected up to 2 1 0 0


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    DS1215 DDlb325 DS1215S 16-PIN 16-PIN PDF

    2SB1417

    Abstract: 2SB1417A 2SD2137
    Text: Power T ransistors 2 S B 1 4 1 7 , 2SB1417, 2SB1417A 2 S B 1 4 1 7 A Silicon PNP Epitaxial Planar Type • P ackage Dim ensions Pow er Am plifier C om plem entary Pair with 2 S D 2 1 3 7 ■ Features • H igh DC c u r re n t gain I if e an d good lin earity


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    2SB1417, 2SB1417A 2SB1417 2SB1417A 001b324 2SD2137 PDF

    DL05L

    Abstract: lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates
    Text: Library Characteristics AMI AMERICAN MICROSYSTEMS, INC Description • Cost driven architecture: - Offers both 2 and 3 level metal interconnect to provide the lowest user cost for the number of gates and pads required. - Compiled memory blocks on standard cells are


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    2Kx32 16Kx32 256x16 R04cwxyz, R06cwxyz 4D55c DL05L lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates PDF

    Untitled

    Abstract: No abstract text available
    Text: S A H S U N 6 E L E C T R O N I C S I N C b 7 E I> • 7 T L > 4 1 4 2 KM48C2100 0 Q l b 3 1 4 7 7 2 I SMGK CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C2100 is a CMOS high speed


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    KM48C2100 KM48C2100 110ns KM48C2100-7 130ns KM48C2100-8 150ns KM48C2100-6 200fis ib4142 PDF