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    003 SOT143 Search Results

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    LPCC-16

    Abstract: SSOP-16 SOT-143 212 sot-23 QFN-20 SOT 213 LPCC-20 transistor sc 308 MSOP-10 SSOP-20
    Text: Package Style/Part Number Reference Package Style Packaging Part Number Suffix Package Style Packaging Part Number Suffix Ceramic Surface Mount Package -A2 SSOP-8 Chip/Wafer -000 5 Lead Ceramic Package -65 SOT-23 -001 SOT-5 -72 SOT-23 -003 SOT-6 -73 SOT-23


    Original     		PDF OT-23 PFP-16 SSOP-16 SSOP-16 OD-323 LPCC-16 SOT-143 212 sot-23 QFN-20 SOT 213 LPCC-20 transistor sc 308 MSOP-10 SSOP-20

    DATA VISION LCD MODULE p121

    Abstract: smd fuse p150-24 DATA VISION P123 smd fuse p150
    Text: CY8CKIT-003 PSoC 3 FirstTouch Starter Kit Guide Document # 001-49613 Rev. *H Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone USA : 800.858.1810 Phone (Intnl): 408.943.2600 http://www.cypress.com Copyrights Copyrights Cypress Semiconductor Corporation, 2009-2012. The information contained herein is subject to change without notice.


    Original     		PDF CY8CKIT-003 CY8CKIT-003 DATA VISION LCD MODULE p121 smd fuse p150-24 DATA VISION P123 smd fuse p150

    Untitled

    Abstract: No abstract text available
    Text: TM Micro Commercial Components A D D C B Cathode Mark DO-41 DO-35 DIM A B C D DIMENSIONS INCHES MM MIN MAX MIN -.166 -.079 -.020 -1.000 -25.40 MAX 4.20 2.00 0.52 - NOTE DIM A B C D DIM A B C D MAX 5.20 2.70 .64 - NOTE DIM A B C D DIM


    Original     		PDF DO-41 DO-35 DO-201AD DO-35G DO-15 050TYP 27TYP O-92MOD 059TYP 50TYP

    BH204N

    Abstract: BH403a M208D BH198 BH202N M208A
    Text: MICROWAVE SILICON COMPONENTS Case styles CASE STYLES SURFACE MOUNT DEVICES GENERAL PURPOSE STRIP LINE / MICRO STRIP PAGE PAGE PAGE A22e .12-48 SMD3 .12-56 BH15 .12-48 BH28 .12-48


    Original     		PDF BH142a BH142b BH142c BH142d BH142e BH142f BH167 BH167s BH198 M208a BH204N BH403a M208D BH202N

    M208A

    Abstract: BMH76
    Text: MICROWAVE SILICON COMPONENTS Case styles CASE STYLES SURFACE MOUNT DEVICES GENERAL PURPOSE STRIP LINE / MICRO STRIP PAGE PAGE PAGE A22e .12-48 SMD3 .12-56 BH15 .12-48 BH28 .12-48


    Original     		PDF BH142a BH142b BH142c BH142d BH142e BH142f BH167 BH167s BH198 M208a BMH76

    crystal 12mhz

    Abstract: Si2301BDS-T1-E3 1P SOT23 SD028000080 X5H012000FI1H SE070104Z80 ls-4272p AES1610-C-DF-TR-GO00-AC 16w SOT23 7A12000026
    Text: Material List by Single-Item/Multi-Level - Partial -Date : 04/26/2008 Time : 15:01:24 Drawing No: 4559M6 Plant: CN50 Revision: C


    Original     		PDF 4559M6 F0602949 BOL01 4559M6BOL01 S4272 JAT10 4359M6BOL01 EL043001500 crystal 12mhz Si2301BDS-T1-E3 1P SOT23 SD028000080 X5H012000FI1H SE070104Z80 ls-4272p AES1610-C-DF-TR-GO00-AC 16w SOT23 7A12000026

    SP0503BAHT

    Abstract: 505B SOT23-6 503B SOT143 SP0505BA 504 SOT23-6 504 ba 048 sot23-6 SP0504BAAT
    Text: TVS Avalanche Diode Array SP0502BA, SP0503BA, SP0504BA, SP0505BA, SP0506BA Surface Mount Transient Voltage Suppression Arrays for ESD Protection Features The surface mount family of arrays are designed to suppress ESD and other transient overvoltage events. These arrays


    Original     		PDF SP0502BA, SP0503BA, SP0504BA, SP0505BA, SP0506BA transie12 SP0505BAHT OT23-6 SP0504BAAT SP0506BAAT SP0503BAHT 505B SOT23-6 503B SOT143 SP0505BA 504 SOT23-6 504 ba 048 sot23-6

    c037

    Abstract: s 404 p
    Text: Package Dimensions Micrel PIN 1 DIMENSIONS: INCH MM 0.380 (9.65) 0.370 (9.40) 0.255 (6.48) 0.245 (6.22) 0.135 (3.43) 0.125 (3.18) 0.300 (7.62) 0.013 (0.330) 0.010 (0.254) 0.018 (0.57) 0.380 (9.65) 0.320 (8.13) 0.130 (3.30) 0.100 (2.54) 0.0375 (0.952) 8-Pin Plastic DIP (N)


    Original     		PDF 14-Pin followi828) O-247 c037 s 404 p

    NE25139T1U73

    Abstract: NE25139 NE25139U74 NE25139-T1 NE25139T1U71 NE25139T1U72 NE25139U71 NE25139U72 NE25139U73 fet dual gate sot143
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm


    Original     		PDF NE25139 NE251 24-Hour NE25139T1U73 NE25139 NE25139U74 NE25139-T1 NE25139T1U71 NE25139T1U72 NE25139U71 NE25139U72 NE25139U73 fet dual gate sot143

    EIA-481-2

    Abstract: EIA-481-3 MIC2557BM MICREL MARK Micrel tape and reel
    Text: Table of Contents Section 12: PACKAGE INFORMATION Packaging for Automatic Handling . 12-3 Mounting Information . 12-6


    Original     		PDF 14-Pin 16-Pin O-247 EIA-481-2 EIA-481-3 MIC2557BM MICREL MARK Micrel tape and reel

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 ESD5V0T143-4U Features • • • • • • • 500 Watts Peak Power per Line (tp = 8/20us) ESD Protection > 25 kilovolts


    Original     		PDF ESD5V0T143-4U 8/20us) OT-143

    MSPD2018

    Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
    Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800


    Original     		PDF foc17091 MSPD2018 MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode

    NE25139

    Abstract: ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm


    Original     		PDF NE25139 NE251 NE25139T1U74 24-Hour NE25139 ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13

    KS05B3

    Abstract: No abstract text available
    Text: KS05B3 VOLTAGE: 5.0 V Elektronische Bauelemente 40 W Transient Voltage Suppressors Diode RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-143 DESCRIPTION . Designed to protect voltage sensitive components from ESD. . Excellent clamping capability, low leakage and fast response.


    Original     		PDF KS05B3 OT-143 023Re 24-Sep-2007 KS05B3

    Untitled

    Abstract: No abstract text available
    Text: Q> p 3 Q. § c o gCD CO Semiconductor Package Configuration Reference n ? / a y y Single SOT-23 -001 / \y y S / \ y y Common Anode SOT-23 (-003) Common Cathode SOT-23 (-004) g I H /X Il y h Series Pair SOT-23 (-005) y ? S H y Reverse Series Pair SOT-23 (-006)


    OCR Scan     		PDF OT-23 OD-323 OT-143

    marking VB SOT-23

    Abstract: SMP1302-079 P1307
    Text: GaAs RF ICs and Modules PIN Diodes Attenuator PIN Diodes a / y il Iy y y H A y t * * h œ a B Common Cathode SOT-23 Series Pair SOT-23 ♦ SMP1302-003 ♦ SMP1302-004 ♦ 1 SMP1302-005 PF9 PF3 PF2 SC-70 SC-70 SC-70 ♦ SMP1302-073 ♦ SMP1302-074 PF9 PF3 ♦ 1SMP1302-075


    OCR Scan     		PDF OT-23 SMP1302-004 OD-323 SMP1302-001 SMP1302-003 SMP1302-005 marking VB SOT-23 SMP1302-079 P1307

    S3928

    Abstract: Detector Diodes marking c sot23 marking sa2 Surface Mount RF Schottky Barrier Diodes
    Text: 13 A lpha Plastic Packaged Surface Mount Schottky Mixer and Detector Diodes Features For High Volume Commercial Applications SOD 323 Industry Standard SO T-23, SO T-143, and S O D -323 Packages SOT 23 SOT 143 Tight Parameter Distribution High Signal Sensitivity


    OCR Scan     		PDF T-143, Q037\P-94r" OT-143 --YO-10 S3928 Detector Diodes marking c sot23 marking sa2 Surface Mount RF Schottky Barrier Diodes

    PJ 3139

    Abstract: NE25137 NEC Ga FET marking L NE76084 NE25139 DUAL FET marking JE FET fet dual gate sot143
    Text: N E C / CALIFORNIA 1SE NEC D b427414 Q001bS3 GENERAL PURPOSE DUAL-GATE GaAs MESFET • S U I T A B L E F O R U S E A S R F A M P L I F I E R IN U H F TUNER rss: NE25137 NE25139 O U T L I N E D I M E N S I O N S Units in mm FEATURES • LO W C 7 ^ 2 .5 “


    OCR Scan     		PDF b427414 Q001bS3 NE25137 NE25139 NE251 NE76084 Rn/50 PJ 3139 NEC Ga FET marking L NE25139 DUAL FET marking JE FET fet dual gate sot143

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES_ • SU ITA B LE FOR USE AS RF AM PLIFIER IN UH FTUNER • LOW C rss: 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz NE25139 POWER GAIN AND NOISE FIGURE vs.


    OCR Scan     		PDF NE25139 NE251 OT-143) NE25139 E25139-T1 NE25139U71 NE25139T1U71 NE25139U72 E25139T1U72 NE25139U73

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POW ER GAIN AND NOISE FIGURE vs. DRAIN TO S O U R C E V O LT AG E • SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER • LOW C r s s : 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 M Hz m • LOW NF: 1.1 d B T Y P A T 900 MHz


    OCR Scan     		PDF NE25139 NE251 OT-143) NE25139 NE25139-T1 NE25139U71 NE25139T1U71 NE25139U72 NE25139T1U72 NE25139U73

    NEC Ga FET marking A

    Abstract: NE25139T1U74 NE25139U NE25139T1U71
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER QPS LOW CRSS: 0.02 pF TYP M — /; { ' // i ! 1 V f 1 HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz


    OCR Scan     		PDF NE25139 Vi32S 90CIM NE251 NE25139T1 NE25139U74 24-Hour NEC Ga FET marking A NE25139T1U74 NE25139U NE25139T1U71

    Untitled

    Abstract: No abstract text available
    Text: Central BAS28 Sem icon du ctor Corp. DUAL, ISOLATED HIGH SPEED SW ITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed


    OCR Scan     		PDF BAS28 OT-143 0T84T

    212 s sot-23

    Abstract: 212 sot-23 LPCC-20 338 sot-23 a3 sot143
    Text: o JO Package Style/Part Number Reference <o < o PACKAGE STYLE PACKAGING PART NUMBER SUFFIX Ceramic Surface Mount Package -A2 8 Lead Ceramic Package -60 Ceramic Surface Mount Package -A3 LQFP-32 7 x 7 mm -61 Ceramic Surface Mount Package -A4 SSOP-8 -62 Chip/Wafer


    OCR Scan     		PDF LQFP-32 PFP-16 SSOP-16 SSOP-20 MSOP-10 TSSOP-16 SC-88 SC-70) 212 s sot-23 212 sot-23 LPCC-20 338 sot-23 a3 sot143

    U73-U74

    Abstract: 14E-14
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP m HIGH GPS: 20 dB (TYP) AT 900 MHz CÛ •a 7D LOW NF: 1.1 dB TYP AT 900 MHz


    OCR Scan     		PDF NE25139 NE251 OT-143) NE25139-T1 NE25139U71 NE25139T1U71 NE25139U72 NE25139T1U72 NE25139U73 U73-U74 14E-14