40N25
Abstract: IXTH40N25 f g megamos SM 226 6V megamos 46 08 09 6 megamos IXTH40N30 1712 mosfet LD 5161
Text: I X Y S CORP ID E I D 4 L f l b 5 ab DD0 0 3 SÖ fl | □IXYS ' IXTH40N30, 25 IXTM40N30, 25 MAXIMUM RATINGS Parameter Sym. IXTH40N25 IXTM40N25 IXTH40N30 IXTM40N30 Unit Drain-Source Voltage 1 Voss 250 300 Mac Drain-Gate Voltage (Rqs = 1-OMii) (1) Vq 250 300
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IXTH40N25
IXTH40N30
IXTM40N25
IXTM40N30
40N25
f g megamos
SM 226 6V
megamos 46 08 09 6
megamos
1712 mosfet
LD 5161
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Untitled
Abstract: No abstract text available
Text: Surface Mount LED, 0190 bulk & 0198 (tape & reel) Series The 0190 series lamps are miniature chip type designed for surface mounting. These lamps measure approximately 0.8 x l. 6 mm. These lamps are available in EIA481 tape and reel packaging with approximately 2000 pcs per reel. For tape and reel packaging the
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EIA481
IURC0190
IUGC0190
IUYC0190
IUOC0190
1300-B
800-LED-IDEA;
984S-0190
00D0317
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4116 DRAM 16Kx1
Abstract: 82C206 82C558
Text: 82C556/82C557/82C558 Figure 2-3 82C557 SYSC Block Diagram I R ES ET PW RG D CLK ECLK LCLK HA[31:3] BE[7:0]# M /IO # D/C# W /R # /IN V /D IR TYO AD S # BRDY# NA# KEN #/LM EM # EADS#/(W B/W T#) HITM # CACHE# SM IACT# EC D OE# O C D O E# ECAWE#/CACSOO# OCAW E#/CACS1 O#
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82C556/82C557/82C558
82C557
4116 DRAM 16Kx1
82C206
82C558
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75n08
Abstract: megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos
Text: I X Y S IDE CORP D I 4böbS?b D OOG a b b T □IXYS I 't f - l Ç MegaMOS FETs IXTH75N10, 08 IXTM75N10, 08 MAXIMUM RATINGS Sym. IXTH75N08 IXTM75N08 IXTH75N10 IXTM75N10 Unit Drain-Source Voltage 1 Vd s s 80 100 Vdc Drain-Gate Voltage (Rq s = 1-OMfl) (1)
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IXTH75N08
IXTH75N10
IXTM75N08
IXTM75N10
IXTH75N10,
IXTM75N10,
0-100V,
O-247
75n08
megamos 46 08 09 6
TL 1074 CT
Mosfet K 135 To3
p 75n08
k 1120
P-Channel MOSFET 800v
f g megamos
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IXTH26N50
Abstract: IXTH26N45 ixtm26n50 TL 1074 CT
Text: I X Y S IDE CORP 1 ° Mbflb52b 000D350 3 I -' □ IX Y S MegaNIOS FETs IXTH26N50, 45 IXTM26N50, 45 MAXIMUM RATINGS Parameter Sym. IXTH26N45 IXTM26N45 IXTH26N50 IXTM26N50 Unit Drain-Source Voltage 1 Vdss 450 500 Vdc V dgr 450
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IXTH26N45
IXTH26N50
IXTM26N45
IXTM26N50
Mbflb22b
IXTH26N50,
00ESN0TINCLUOE
TL 1074 CT
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M/MIL-C-39006
Abstract: No abstract text available
Text: m MATSUO TYPE SOLID-ELECTROLYTE TANTALUM CAPACITORS A O 5 - 2 /-0 s A CAUTIONS 111 •This capacitor is polarized, do not apply reverse voltage. >The sum of peak value of AC and DC voltage should not exceed the rated voltage. •This catalog is designed for providing general information. Please
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/1000h
CLS79
CSS13
CSR02
DD0034E
RCJ-03-20A
M/MIL-C-39006
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42N15
Abstract: 079A 42N20
Text: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous
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D00D3b4
IXTH42N20,
IXTM42N20,
IXTH42N15
IXTM42N15
IXTH42N20
IXTM42N20
O-204
O-247
50-200V,
42N15
079A
42N20
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PS8613
Abstract: MAX293 equivalent NT46 M4125 M41256PP
Text: ^ m irliO — A T & T MELEC I H C 4 1 2 5 6 x x fi)jO B , FEATURES • 262,144 words x 1-bit organization • Read-Modify-Write capabilities • 100/120/150 ns access tim e from RE • RE Only R efresh/H idden Refresh • 50/60/75 ns access time from CE
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M41256xx-10B
56CP-15B
M41256HP-10B*
M41256HP-12B
M41256HP-15B
M41256CN-10B*
M41256CN-12B
M41256CN-15B
M41256HN-10B*
M41256HN-12B
PS8613
MAX293 equivalent
NT46
M4125
M41256PP
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26655B
Abstract: No abstract text available
Text: m * SOLID-ELECTROLYTE TANTALUM CAPACITORS MATSUO TYPE 122 Non polar type A CAUTIONS • The sum of peak value of AC and DC voltage should not exceed the rated voltage. •This catalog is designed for providing general information. Please inquire of our Sales Department to confirm specifications prior to use.
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000hours
IL-C-26655A,
26655B
00D0317
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ID 48 Megamos
Abstract: 35N25 IXTM35N25 ixtm35n30
Text: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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IXTH35N25
IXTM35N25
IXTH35N30
IXTM35N30
O-204
O-247
IXTH350
ID 48 Megamos
35N25
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17N55
Abstract: MOSFET 17N60 17N60 IXTM17N55 IXTH17N60
Text: IDE I X Y S CORP D I 4t>ôt>22t, 0 0 00 3M b I r - 5 ? - / r MegaMOS'“ FETs n ix Y S IXTH17N60, 55 IXTM17N60, 55 MAXIMUM RATINGS Sym. IXTH17N55 IXTM17N55 IXTH17N60 IXTM17N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rg s = 1-OMfl) (1)
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IXTH17N55
IXTM17N55
IXTH17N60
IXTM17N60
O-204
O-247
IXTH17N60,
IXTM17N60,
17N55
MOSFET 17N60
17N60
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TL 1074 CT
Abstract: megamos 46 08 09 6 a 1712 mosfet IXTH20N55 25N50 f g megamos
Text: I X Y S IDE C0RP » 1 4L,âfc,52b 0000344 fl □ IX Y S M e ga M O S’“ FETs IXTH20N60, 55 IXTM20N60, 55 MAXIMUM RATINGS Sym. IXTH20N55 IXTM20N55 IXTH20N60 IXTM20N60 Drain-Source Voltage 1 Vd s s 550 600 Drain-Gate Voltage (R q s = 1-OMfl) (1) Vd g r
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IXTH20N55
IXTH20N60
IXTM20N55
IXTM20N60
00D0344
IXTH20N60,
IXTM20N60,
50-600V,
O-247
TL 1074 CT
megamos 46 08 09 6
a 1712 mosfet
25N50
f g megamos
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