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Kyocera AVX Components 100B100FT500XT1K CAP CER 10PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B100FT500XT1K	Cut Tape	21,161		1	1 $7.1 10 $4.875 100 $3.6937 1000 $3.2134 10000 $3.2134	Buy Now
	100B100FT500XT1K	Digi-Reel	21,161		1	1 $7.1 10 $4.875 100 $3.6937 1000 $3.2134 10000 $3.2134	Buy Now
	100B100FT500XT1K	Reel	20,000		1,000	1 - 10 - 100 - 1000 $3.03769 10000 $3.03769	Buy Now
Mouser Electronics	100B100FT500XT1K		701			1 $6.45 10 $4.88 100 $3.7 1000 $3.21 10000 $3.14	Buy Now
Kyocera AVX Components 100B101FW500XT1K CAP CER 100PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B101FW500XT1K	Cut Tape	6,561		1	1 $14.22 10 $10.171 100 $8.0146 1000 $7.13648 10000 $7.13648	Buy Now
	100B101FW500XT1K	Digi-Reel	6,561		1	1 $14.22 10 $10.171 100 $8.0146 1000 $7.13648 10000 $7.13648	Buy Now
	100B101FW500XT1K	Reel	2,000		1,000	1 - 10 - 100 - 1000 $6.86153 10000 $6.86153	Buy Now
Kyocera AVX Components 100B100GT500XT1K CAP CER 10PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B100GT500XT1K	Digi-Reel	3,023		1	1 $9.75 10 $6.828 100 $5.2702 1000 $4.63636 10000 $4.63636	Buy Now
	100B100GT500XT1K	Cut Tape	3,023		1	1 $9.75 10 $6.828 100 $5.2702 1000 $4.63636 10000 $4.63636	Buy Now
	100B100GT500XT1K	Reel	2,000		1,000	1 - 10 - 100 - 1000 $4.40071 10000 $4.23697	Buy Now
Avnet Americas	100B100GT500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B100GT500XT1K		2,045			1 $7.11 10 $5.44 100 $4.08 1000 $3.28 10000 $3.22	Buy Now
Richardson RFPD	100B100GT500XT1K				1,000	1 - 10 - 100 - 1000 $2.89 10000 $2.62	Buy Now
iNRCORE LLC 100B-1003FXNL EXTMP XFMR 100BT SMG COM NPB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B-1003FXNL	Bulk	816		1	1 $23.95 10 $20.462 100 $18.61538 1000 $17.58898 10000 $17.58898	Buy Now
Avnet Abacus	100B-1003FXNL			10 Weeks	80	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components 100B101JP500XT CAP CER 100PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B101JP500XT	Reel	500		500	1 - 10 - 100 - 1000 $4.24973 10000 $4.44226	Buy Now
	100B101JP500XT	Cut Tape	463		1	1 $9.22 10 $6.44 100 $4.9582 1000 $4.9582 10000 $4.9582	Buy Now
Avnet Asia	100B101JP500XT			18 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 100B10 price and stock on Findchips.com

100B10 Datasheets (85)

Part	Manufacturer	Description	Datasheet Type	PDF
100B-1001	Pulse Engineering	10/100BASE-TX SINGLE-PORT TRANSFORMER MODULESMilitary / Aerospace Grade	Original	PDF
100B-1001NL	iNRCORE	EXTMP XFMR 100BT SMG COM RPB	Original	PDF
100B-1001NL	Pulse Electronics	EXTMP XFMR 100BT SMG COM RPB	Original	PDF
100B-1001NLT	iNRCORE	EXTMP XFMR 100BT SMG COM RPB	Original	PDF
100B-1001NLT	Pulse Electronics	EXTMP XFMR 100BT SMG COM RPB	Original	PDF
100B-1001T	Pulse Engineering	10/100Base-TX Single-Port Transformer Modules Military/Aerospace Grade, Tape&Reel	Original	PDF
100B-1001X	Pulse Engineering	10/100BASE-TX SINGLE-PORT TRANSFORMER MODULESMilitary / Aerospace Grade	Original	PDF
100B-1001XNL	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM RPB	Original	PDF
100B-1001XNLT	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM RPB	Original	PDF
100B-1001XT	Pulse Engineering	10/100Base-TX Single-Port Transformer Modules Military/Aerospace Grade, Tape&Reel	Original	PDF
100B-1003	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM PBC	Original	PDF
100B-1003F	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM PBC	Original	PDF
100B-1003FNL	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - XFMR MODULE 100BT SMG COM NPB	Original	PDF
100B-1003FNLT	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM NPB	Original	PDF

100B-1003FT	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM NPB	Original	PDF
100B-1003FX	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM NPB	Original	PDF
100B-1003FXNL	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM NPB	Original	PDF
100B-1003FXNLT	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM NPB	Original	PDF
100B-1003FXT	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM NPB	Original	PDF
100B-1003NL	Pulse Electronics Military & Aerospace	Transformers - Pulse Transformers - EXTMP XFMR 100BT SMG COM NPB	Original	PDF

100B10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: High Power COB LED P/ N: HL– LT005F22W-100B10C10 （Ra1） Under Development Mass production ATTENTION注意 OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES 请勿裸手接触器件 Features 特点 ● Dimension 46mmx40mm×2.4mm	Original	LT005F22W-100B10C10 APR/2013	PDF
Untitled Abstract: No abstract text available Text: High Power COB LED P/ N: HL– LT005F22W-100B10C10 （Ra1） Under Development Mass production ATTENTION注意 OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES 请勿裸手接触器件 Features 特点 ● Dimension 46mmx40mm×2.4mm	Original	LT005F22W-100B10C10 APR/2013	PDF
TH 2190 HOT Transistor Abstract: No abstract text available Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21180EF TH 2190 HOT Transistor	PDF
transistor 7350 Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496 Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19060E Hz--1990 AGR19060E DS04-159RFPP DS04-078RFPP) transistor 7350 agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A j496	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	MRF9080 MRF9080LR3 MRF9080LSR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of	Original	MRF6P9220H MRF6P9220HR3	PDF
MRF9030MBR1 Abstract: MRF9030MR1 100B7R5JP Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 MRF9030MBR1 100B7R5JP	PDF
AGR09030GUM Abstract: JESD22-C101A RF35 Text: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35	PDF
Z9 TRANSISTOR SMD Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8 Text: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18045E AGR18045E DS03-186RFPP Z9 TRANSISTOR SMD JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8	PDF
2N6136 Abstract: uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A Text: Order this document by AN548A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN548A MICROSTRIP DESIGN TECHNIQUES FOR UHF AMPLIFIERS Prepared by: Glenn Young power gain of 16 dB and a bandwidth – 1 dB of 8 MHz. Overall efficiency is 48.5% and all harmonics are a minimum	Original	AN548A/D AN548A 2N6136 uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A	PDF
C1206C104KRAC7800 Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW	PDF
100B101JW Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to	Original	MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3	PDF
RM73B2B Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2 Text: Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2B 465B AN1955 MRF5S19130H MRF5S19130HSR3 RM73B2	PDF

J294 Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to	Original	MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS	PDF
RF-35-0300 Abstract: A04T-5 93F2975 A113 MRF9060MBR1 MRF9060MR1 100B470JP 100B100JP 44F3360 Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9060M/D MRF9060MR1 MRF9060MBR1 RF-35-0300 A04T-5 93F2975 A113 MRF9060MBR1 100B470JP 100B100JP 44F3360	PDF
330 j73 Tantalum Capacitor Abstract: j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1 Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest	Original	MW4IC001MR4 MW4IC001NR4 MW4IC001 MW4IC001NR4 330 j73 Tantalum Capacitor j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1	PDF
Untitled Abstract: No abstract text available Text: MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1 GNBR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION	Original	MW4IC915 MW4IC915NBR1 MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1	PDF
MRF21085 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21085LR3 MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF21085 MRF21085LR3 MRF21085LSR3 MRF21085LR3 MRF21085	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors	Original	MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF21060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and	Original	MRF21060 MRF21060LR3 MRF21060LSR3 MRF21060LR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35005N MRFG35005NT1 MRFG35005ANT1. MRFG35005NT1	PDF

100B10 Search Results

100B10 Price and Stock

Kyocera AVX Components 100B100FT500XT1K

Kyocera AVX Components 100B101FW500XT1K

Kyocera AVX Components 100B100GT500XT1K

iNRCORE LLC 100B-1003FXNL

Kyocera AVX Components 100B101JP500XT

100B10 Datasheets (85)

100B10 Datasheets Context Search

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TH 2190 HOT Transistor

transistor 7350

Untitled

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Untitled

MRF9030MBR1

AGR09030GUM

Z9 TRANSISTOR SMD

2N6136

C1206C104KRAC7800

100B101JW

RM73B2B

J294

RF-35-0300

330 j73 Tantalum Capacitor

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MRF21085

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