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Goford Semiconductor G110N06K N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	G110N06K	Digi-Reel	12,202		1	1 $2 10 $1.276 100 $2 1000 $0.62746 10000 $0.62746	Buy Now
	G110N06K	Cut Tape	12,202		1	1 $2 10 $1.276 100 $2 1000 $0.62746 10000 $0.62746	Buy Now
	G110N06K	Reel	10,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.525	Buy Now
Goford Semiconductor GT110N06D5 N60V, 45A,RD<11M@10V,VTH1.0V~2.4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT110N06D5	Cut Tape	9,976		1	1 $1.29 10 $0.814 100 $1.29 1000 $0.38069 10000 $0.34852	Buy Now
	GT110N06D5	Digi-Reel	9,976		1	1 $1.29 10 $0.814 100 $1.29 1000 $0.38069 10000 $0.34852	Buy Now
	GT110N06D5	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.2875	Buy Now
Goford Semiconductor GT110N06S N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT110N06S	Digi-Reel	3,583		1	1 $1.14 10 $0.712 100 $1.14 1000 $0.32836 10000 $0.29983	Buy Now
	GT110N06S	Cut Tape	3,583		1	1 $1.14 10 $0.712 100 $1.14 1000 $0.32836 10000 $0.29983	Buy Now
Infineon Technologies AG BSZ110N06NS3GATMA1 MOSFET N-CH 60V 20A 8TSDSON
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSZ110N06NS3GATMA1	Digi-Reel	2,546		1	1 $1.24 10 $0.779 100 $1.24 1000 $0.36346 10000 $0.33265	Buy Now
	BSZ110N06NS3GATMA1	Cut Tape	2,546		1	1 $1.24 10 $0.779 100 $1.24 1000 $0.36346 10000 $0.33265	Buy Now
Newark	BSZ110N06NS3GATMA1	Bulk	817		1	1 $0.676 10 $0.52 100 $0.406 1000 $0.318 10000 $0.317	Buy Now
Rochester Electronics	BSZ110N06NS3GATMA1		117,966		1	1 $0.3071 10 $0.3071 100 $0.2887 1000 $0.261 10000 $0.261	Buy Now
Ameya Holding Limited	BSZ110N06NS3GATMA1		20,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	BSZ110N06NS3GATMA1			9 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Win Source Electronics	BSZ110N06NS3GATMA1		68,970			1 - 10 - 100 $0.6382 1000 $0.4941 10000 $0.4941	Buy Now
Micro Commercial Components MCU110N06YA-TP N-CHANNEL MOSFET,DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCU110N06YA-TP	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.679	Buy Now
	MCU110N06YA-TP	Cut Tape	2,328		1	1 $2.41 10 $1.549 100 $2.41 1000 $0.77918 10000 $0.77918	Buy Now
Mouser Electronics	MCU110N06YA-TP					1 - 10 - 100 - 1000 - 10000 $0.678	Get Quote

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110N06 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
110N06N Abstract: IEC61249-2-21 JESD22 BSZ110N06NS3G Text: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 11 mΩ ID 20 A • Excellent gate charge x R DS(on) product (FOM)	Original	BSZ110N06NS3 IEC61249-2-21 110N06N 10angerous 110N06N IEC61249-2-21 JESD22 BSZ110N06NS3G	PDF
marking D78 Abstract: smd diode marking 78A Text: 110N06L G OptiMOS Power-Transistor 110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature	Original	IPB110N06L IPP110N06L PG-TO263-3-2 P-TO263-3-2 110N06L P-TO220-3-1 marking D78 smd diode marking 78A	PDF
110N06 Abstract: 9000 044 053 siemens 110N07 P8000 Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07	Original	ID130 150OC 100OC 110N06 9000 044 053 siemens 110N07 P8000	PDF
110N06N Abstract: BSZ110N06NS3 G 110N06 JESD22 ua323 Text: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 11 mΩ ID 20 A • Excellent gate charge x R DS(on) product (FOM)	Original	BSZ110N06NS3 110N06N 110N06N BSZ110N06NS3 G 110N06 JESD22 ua323	PDF
Untitled Abstract: No abstract text available Text: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS on product (FOM) VDS 60 V RDS(on),max 11 mW ID 50	Original	BSC110N06NS3 IEC61249-2-21 110N06NS	PDF
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158	PDF
110N06NS Abstract: JESD22 ua323 Text: Type 110N06NS3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 11 mΩ ID 20 A • Excellent gate charge x R DS(on) product (FOM)	Original	BSZ110N06NS3 110N06NS 110N06NS JESD22 ua323	PDF
9000 044 053 siemens Abstract: 110N07 Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07	Original	O-264 ID130 150OC 100OC 9000 044 053 siemens 110N07	PDF
110N06L Abstract: smd diode 78a smd diode marking 78A SMD diode D94 PG-TO220-3 PG-TO263 marking d78 IPP110N IPP110N06L diode smd 312 Text: 110N06L G OptiMOS Power-Transistor 110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 11 m: 78 A • 175 °C operating temperature	Original	IPB110N06L IPP110N06L PG-TO263-3 P-TO26 PG-TO220-3 110N06L 110N06L smd diode 78a smd diode marking 78A SMD diode D94 PG-TO220-3 PG-TO263 marking d78 IPP110N diode smd 312	PDF
Untitled Abstract: No abstract text available Text: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 11 mΩ ID 20 A • Excellent gate charge x R DS(on) product (FOM)	Original	BSZ110N06NS3 110N06N	PDF
Untitled Abstract: No abstract text available Text: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 11 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)	Original	BSC110N06NS3 110N06NS	PDF
110N06N Abstract: No abstract text available Text: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 11 mΩ ID 20 A • Excellent gate charge x R DS(on) product (FOM)	Original	BSZ110N06NS3 110N06N 60K/W 110N06N	PDF
Untitled Abstract: No abstract text available Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 55V / 110A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 110N06T 55V, RDS(ON)=5.5mW@VGS=10V, ID=30A	Original	HY110N06T O-220AB 2002/95/EC O-220AB 250mA 125oC -55oC 11-May-2012	PDF
110N06L Abstract: g3pf DIODE smd marking Ag PG-TO220-3 PG-TO263-3-2 MARKING G3 INFINEON SMD diode D94 Text: 110N06L G OptiMOS Power-Transistor 110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature	Original	IPB110N06L IPP110N06L PG-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 110N06L 110N06L g3pf DIODE smd marking Ag PG-TO220-3 PG-TO263-3-2 MARKING G3 INFINEON SMD diode D94	PDF

PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF
TO-264 Jedec package outline Abstract: ID130 110N07 Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07	Original	O-264 ID130 150OC 100OC TO-264 Jedec package outline ID130 110N07	PDF
PG-TO220-3 Abstract: PG-TO263-3-2 IEC61249-2-21 IPP110N06L G 110N06L Text: 110N06L G OptiMOS Power-Transistor 110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature	Original	IPB110N06L IPP110N06L IEC61249-2-21 PG-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 110N06L PG-TO220-3 PG-TO263-3-2 IEC61249-2-21 IPP110N06L G 110N06L	PDF
110N06NS Abstract: BSC110N06NS3 BSC110N06NS3 G JESD22 FS25 Text: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 11 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)	Original	BSC110N06NS3 110N06NS 110N06NS BSC110N06NS3 G JESD22 FS25	PDF
110N06NS Abstract: BSC110N06NS3 G BSC110N06NS3G BSC110N06NS3 IEC61249-2-21 JESD22 MARKING d50 FS25 Text: Type 110N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 11 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)	Original	BSC110N06NS3 IEC61249-2-21 110N06NS 110N06NS BSC110N06NS3 G BSC110N06NS3G IEC61249-2-21 JESD22 MARKING d50 FS25	PDF
200N06 Abstract: 4835 b 110N06 n Text: HiPerFET Power MOSFETs v ' * f k 110 no7 IXFN 200 N07 110N06 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr i y p k o n n Nfifi D DSS ^D25 DS on 70 V 110 A 70 V 200 A 60 V 110 A 60 V 200 A trr < 250 ns 6 6 6 6 m£2 mQ mQ mQ TO-264 AA (IXFK)	OCR Scan	IXFK110N06 O-264 OT-227 E153432 13Fig, 110NO6 200M06 110N07 200N06 4835 b 110N06 n	PDF
ixys ixfn 55n50 Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60 Text: i , i - •.• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ \| Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01	OCR Scan	O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60	PDF
IXfk 75 N 50 Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30 Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400	OCR Scan	76N06-11 76N06-12 76N07-11 76N07-12 67N10 75N10 42N20 50N20 50N20S 58N20 IXfk 75 N 50 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30	PDF
Untitled Abstract: No abstract text available Text: □ IXYS HiPerFET VDSS Power MOSFETs IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N -C h an n el E n h a n ce m e n t M ode A v a la n c h e R ated, High dv/dt, L o w trr Symbol TestConditions v DSS Tj = 25°C to 150°C v DGR Td = 25°C to 150°C; RGS = 1 M£i	OCR Scan	O-264 110N06 105N07 110N07	PDF
8n80 Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1	OCR Scan	CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B	PDF

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110N06 Price and Stock

Goford Semiconductor G110N06K

Goford Semiconductor GT110N06D5

Goford Semiconductor GT110N06S

Infineon Technologies AG BSZ110N06NS3GATMA1

Micro Commercial Components MCU110N06YA-TP

110N06 Datasheets Context Search

110N06N

marking D78

110N06

110N06N

Untitled

C1162

110N06NS

9000 044 053 siemens

110N06L

Untitled

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110N06N

Untitled

110N06L

PEF 24628

TO-264 Jedec package outline

PG-TO220-3

110N06NS

110N06NS

200N06

ixys ixfn 55n50

IXfk 75 N 50

Untitled

8n80