transistor rf s175-28
Abstract: S175-28
Text: S175-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI S175-28 is a 28 V high power transistor designed for linear HF applications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: C E FULL R Ø.125 NOM.
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S175-28
S175-28
112x45°
transistor rf s175-28
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VLB10-12S
Abstract: ASI10734
Text: VLB10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB10-12S is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° • Common Emitter • PG = 16 dB at 10 W/50 MHz • Omnigold Metalization System
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VLB10-12S
VLB10-12S
112x45°
ASI10734
ASI10734
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VFT150-28
Abstract: No abstract text available
Text: VFT150-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT150-28 is a gold metallized N-Channel enhancement mode MOSFET, intended for use in 28 VDC large signal applications to 175 MHz. PACKAGE STYLE .500 4L FLG .112x45° S FU LL R FEATURES:
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VFT150-28
VFT150-28
112x45°
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HF5-12S
Abstract: ASI10591 HF512S
Text: HF5-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF5-12S is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • PG = 15 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 5 W PEP
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HF5-12S
HF5-12S
112x45°
ASI10591
ASI10591
HF512S
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ASI10735
Abstract: VLB40-12S vhf fm amplifier
Text: VLB40-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB40-12S is a common Emitter transistor, designed for VHF FM amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD A .112x45° B FEATURES:
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VLB40-12S
VLB40-12S
112x45°
ASI10735
ASI10735
vhf fm amplifier
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MRF492
Abstract: MRF492 data sheet
Text: MRF492 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF492 is a 12.5 V low band VHF large-signal power amplifier applications in commercial and industrial FM equipment. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 11 dB min. at 70 W/50 MHz
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MRF492
MRF492
112x45°
MRF492 data sheet
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MRF428
Abstract: No abstract text available
Text: MRF428 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF428 is Designed for high voltage applications up to 30 MHz PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: • PG = 14 dB min. at 150 W/30 MHz • IMD3 = -30 dBc max. at 150 W PEP • Omnigold Metalization System
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MRF428
MRF428
112x45°
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MRF1946a
Abstract: DIC16
Text: MRF1946A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF1946A is Designed for 12.5 V 175 MHz Large-Signal Power Amplifier Applications. PACKAGE STYLE .380" 4L STUD .112x45° FEATURES INCLUDE: C B • High Common Emitter Power Gain • Output Power = 30 W
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MRF1946A
MRF1946A
112x45°
DIC16
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SD1407
Abstract: 1257 transistor
Text: SD1407 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1407 is a class AB common Emitter Transistor Designed for broadband amplifier operations up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 125 W/30 MHz • High linear power output
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SD1407
SD1407
112x45°
1257 transistor
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BLW97
Abstract: TRANSISTOR blw97 2050F
Text: BLW97 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW97 is Designed for High voltage applications up tp 30 MHz PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A C E FULL R • PG = 11.5 dB min. at 175 W/30 MHz • IMD3 = -30 dBc max. at 175 W PEP
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BLW97
BLW97
112x45°
TRANSISTOR blw97
2050F
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MRF141
Abstract: MOSFET RF POWER
Text: MRF141 RF FIELD-EFFECT POWER TRANSISTOR PACKAGE STYLE .500 4L FLG DESCRIPTION: The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications. .112x45° S FULL R D B S G MAXIMUM RATINGS
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MRF141
MRF141
112x45°
MOSFET RF POWER
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MRF315A
Abstract: No abstract text available
Text: MRF315A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF315A is Designed for Class C Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: • PG = 9.0 dB min. at 45 W/ 150 MHz • Withstands 30:1 Load VSWR • Omnigold Metalization System
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MRF315A
MRF315A
112x45°
ASI10757
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ASI10727
Abstract: No abstract text available
Text: VHB40-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28S is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: ØC 65 V VCEO 35 V VEBO 4.0 V I F E O O O O -65 C to +200 C TSTG -65 C to +150 C
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VHB40-28S
VHB40-28S
112x45°
ASI10727
ASI10727
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Untitled
Abstract: No abstract text available
Text: MRF448 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF448 is Designed for High Linearity Class AB HF Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 14 dB Typical at 220 W/30 MHz • IMD3 = -32 dBc Typ. at 220 W PEP
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MRF448
MRF448
112x45°
ASI10866
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tp9380
Abstract: No abstract text available
Text: TP93805 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TP9380 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System
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TP93805
TP9380
112x45°
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MRF234
Abstract: MRF-234
Text: MRF234 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF234 is Designed for Large-Signal Amplifier Applications to 100 MHz. PACKAGE STYLE .380" 4L STUD .112x45° FEATURES: • Common Emitter C B • Omnigold Metalization System • PG = 9.5 dB min. at 25 W/ 90 MHz
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MRF234
MRF234
112x45°
MRF-234
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VHB10-12S
Abstract: ASI10713
Text: VHB10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-12S is Designed for PACKAGE STYLE .380 4L STUD FEATURES: .112x45° • • • Omnigold Metalization System A B ØC MAXIMUM RATINGS D H J 2.0 A IC G #8-32 UNC-2A VCBO 36 V VCEO 18 V VCES
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VHB10-12S
VHB10-12S
112x45°
ASI10713
ASI10713
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VMB80-28S
Abstract: ASI10749
Text: VMB80-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VMB80-28S is Designed for .112x45° A B FEATURES: • • • Omnigold Metalization System ØC D G #8-32 UNC-2A IC 9.0 A VCBO 65 V VEBO I J MAXIMUM RATINGS VCEO H
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VMB80-28S
VMB80-28S
112x45°
ASI10749
ASI10749
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ASI10612
Abstract: HF150-50F 37ad
Text: HF150-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50F is Designed for PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 14 dB min. at 150 W/30 MHz • IMD3 = 100 dBc max. at 150 W PEP • Omnigold Metalization System FULL R
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HF150-50F
HF150-50F
112x45°
ASI10612
37ad
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ASI10601
Abstract: HF8-28S
Text: HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is Designed for PACKAGE STYLE .380 4L STUD FEATURES: • PG = 21 dB min. at 8 W/30 MHz • IMD3 = -30 dBc max. at 8 W PEP • Omnigold Metalization System .112x45° A B C E ØC MAXIMUM RATINGS
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HF8-28S
HF8-28S
112x45°
ASI10601
ASI10601
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PT9730
Abstract: No abstract text available
Text: PT9730 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9730 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° • Common Emitter • PG = 10 dB at 10W/175 MHz • Omnigold Metalization System
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PT9730
PT9730
112x45°
0W/175
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BLX39
Abstract: No abstract text available
Text: BLX39 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 STUD The ASI BLX39 is Designed for broadband amplifier operations up to 175 MHz. .112x45° A B C E FEATURES: ØC • PG = 7.6 dB min. at 40 W/175 MHz • Emitter Resistors Ballasted • Omnigold Metalization System
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BLX39
BLX39
112x45°
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BLY90
Abstract: No abstract text available
Text: BLY90 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLY90 is Designed for PACKAGE STYLE .380 4L STUD Class A,B and C, 12.5 V High Band Applications up to 175 MHz. .112x45° FEATURES: C B • Common Emitter • PG = 5.0 dB at 50 W/175 MHz • Omnigold Metalization System
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BLY90
BLY90
112x45°
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Untitled
Abstract: No abstract text available
Text: VFT125-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT125-28 is Designed for General Purpose Class A Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A S FU LL R FEATURES: D Ø .125 NO M . C • PG = 11.8 dB Typical at 150 MHz
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VFT125-28
VFT125-28
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