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    Oupiin 2011-1X13TR/2.54/2.54/1.42B

    PIN HEADER, SINGLE ROW, 13 PIN,
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    DigiKey 2011-1X13TR/2.54/2.54/1.42B Bulk 1,000 1
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    AMPCO USA WO-11X13

    WRENCH OPEN END 11X13MM 5.71"
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    DigiKey WO-11X13 Box 1 1
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    Gedore Torque Ltd 6 11X13

    WRENCH OPEN END 11X13MM 6.77"
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    DigiKey 6 11X13 Bulk 1
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    Gedore Torque Ltd 2 11X13

    WRENCH BOX END 11X13MM 8.35"
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    DigiKey 2 11X13 Bulk 1
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    Littelfuse Inc V11X130E

    VARISTOR 205V 6.0KA DISC 14MM
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    DigiKey V11X130E Bulk 4,800
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    Mouser Electronics V11X130E
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    Newark V11X130E Bulk 4,800
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    TTI V11X130E Bulk 4,800
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    11X13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EM6A9325

    Abstract: No abstract text available
    Text: EtronTech EM6A9325 4M x 32 Low Power SDRAM LPSDRAM Preliminary (Rev 0.4 June/2003) Features • 4096 refresh cycles/64ms • Single 2.5V power supply • Interface: LVCMOS •Package : 90 ball-FBGA, 11x13mm, Lead Free • • • • • Clock rate: 133/125/100 MHz


    Original     		PDF EM6A9325 June/2003) cycles/64ms 11x13mm, 32bit EM6A9325BG-7 133MHz 11x13 125y1 EM6A9325

    Untitled

    Abstract: No abstract text available
    Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added 0.7 Changed FBGA Package Size from 11x13 to 8x13.


    Original     		PDF HY57V283220T/ HY5V22F 32Bit 133MHz 11x13 an283220T 400mil 86pin HY57V283220T

    FBGA 11x13

    Abstract: k8p2716 K8P2716UZC
    Text: Rev. 1.0, Jan. 2010 K8P2716UZC 128Mb C-die Page NOR Flash 56Pin TSOP 20x14mm , 64ball FBGA (11x13, 1.0mm ball pitch) Page Mode, (8M x16, 16Mb x8) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF K8P2716UZC 128Mb 56Pin 20x14mm) 64ball 11x13, 64-Ball 60Solder FBGA 11x13 k8p2716 K8P2716UZC

    EM669325

    Abstract: No abstract text available
    Text: EtronTech EM669325 4M x 32 Low Power SDRAM LPSDRAM Preliminary (Rev 0.6 Sep./2003) Features • 4096 refresh cycles/64ms • Single 3.0V, or 3.3V power supply • Interface: LVTTL •Package : 90 ball-FBGA, 11x13mm, Lead Free • • • • • Clock rate: 133/125/100 MHz


    Original     		PDF EM669325 cycles/64ms 11x13mm, 32bit EM669325BG-7 133MHz 11x13 90-FBGA, EM669325

    Untitled

    Abstract: No abstract text available
    Text: F-212 MEZZ 2,00mm .0787" HDAM–11–12.0–S–13–2 HDAF–11–08.0–S–13–2 HDAM, HDAF SERIES RUGGED ELEVATED HIGH DENSITY ARRAY HDAM Mates with: HDAF HDAF Mates with: HDAM HDAM NO. OF PINS PER ROW LEAD STYLE PLATING OPTION Specify LEAD STYLE from


    Original     		PDF F-212

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    FND pinout diagram

    Abstract: ws256n spansion FND115 S29WS-N S30MS-P S75WS256NDF S75WS256NEG S75WS-N A0-A22 NK 5-4
    Text: S75WS-N Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M x 16-Bit) RAM Type 4 and 512 Mb (32M x 16-bit) Data Flash or 1 Gb ORNAND Flash Data Sheet PRELIMINARY


    Original     		PDF S75WS-N 16-bit) FND pinout diagram ws256n spansion FND115 S29WS-N S30MS-P S75WS256NDF S75WS256NEG A0-A22 NK 5-4

    TRAY FBGA 11X13

    Abstract: S72MS512PE0HF94V MCP NAND sDR S72MS-P BGA 15X15 137-Ball MCP NAND DDR S30MS-P Spansion NAND Flash Spansion NAND Flash DIE
    Text: S72MS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72MS-P based MCP/PoP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S72MS-P TRAY FBGA 11X13 S72MS512PE0HF94V MCP NAND sDR BGA 15X15 137-Ball MCP NAND DDR S30MS-P Spansion NAND Flash Spansion NAND Flash DIE

    W29GL256P

    Abstract: W29GL256
    Text: W29GL256P 256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE W29GL256P Table of Contents 1 2 3 4 5 6 7 GENERAL DESCRIPTION . 1 FEATURES . 1


    Original     		PDF W29GL256P 256M-BIT W29GL256P W29GL256

    A11 MARKING CODE

    Abstract: MARK 8E diode MT48LC16M8A2FB-75 sdram 4 bank 4096 16 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design
    Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC100-, and PC133-compliant


    Original     		PDF 128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 096-cycle 60-ball, 11x13 A11 MARKING CODE MARK 8E diode MT48LC16M8A2FB-75 sdram 4 bank 4096 16 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design

    is25c64B

    Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
    Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are


    Original     		PDF

    PF38F4050L0YBQ0

    Abstract: R2528 PF38F4050 RD48F4400 RD48F4400L0 Intel SCSP GE28F256K18C PF48F4400L NP378 PF48F4400L0
    Text: Listing of Tools US Home | Intel Worldwide Where to Buy | Training & Events | Contact Us | About Intel Search Developer site Enter keywords Electronic Tools Catalog: Intel Flash Memory Components Intel® Flash Memory Programmer Intel Corp. FPG Architecture: Flash Memory Components


    Original     		PDF RD38F3350WWZDQ1 FPRO2SCSP96Q FP2INSCSP2648 R26481X) PF38F4050L0YBQ0 R2528 PF38F4050 RD48F4400 RD48F4400L0 Intel SCSP GE28F256K18C PF48F4400L NP378 PF48F4400L0

    is42s16320

    Abstract: IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42/45S16320B is42s16320 IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130

    4 Banks x 1m x 32Bit Synchronous DRAM

    Abstract: No abstract text available
    Text: HY57V283220 L T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1) 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added


    Original     		PDF HY57V283220 HY5V22 32Bit 133MHz 11x13 400mil 86pin HY5V22F 4 Banks x 1m x 32Bit Synchronous DRAM

    Untitled

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION MARCH 2008 FEATURES • Clock frequency: 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S86400B IS42S16320B 512Mb IS42S86400B 54-pin 54-ball

    MT16LD464AG

    Abstract: No abstract text available
    Text: 8, 16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT8LSDT864A, MT16LSDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-, PC100- and PC133-compliant


    Original     		PDF PC66-, PC100- PC133-compliant 168-pin, 128MB 096-cycle -750A1 -745A1 -850A1 -845A1 MT16LD464AG

    dram 72-pin simm 128mb

    Abstract: PC133 registered reference design type 760 t85
    Text: 8, 16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT8LSDT864A, MT16LSDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-, PC100- and PC133-compliant


    Original     		PDF PC66-, PC100- PC133-compliant 168-pin, 128MB 096-cycle MT4VR6418AG 256MB MT8VR12816AG dram 72-pin simm 128mb PC133 registered reference design type 760 t85

    PC133 registered reference design

    Abstract: No abstract text available
    Text: ADVANCE 32, 64 MEG x 72 REGISTERED SDRAM DIMM SYNCHRONOUS DRAM MODULE MT18LSDT3272DG, MT18LSDT6472DG For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT FRONT VIEW 168-PIN DIMM


    Original     		PDF 168-pin, PC133- PC100-compliant 256MB 512MB 64m18 MT8VR12818AG MT16VR25616AG PC133 registered reference design

    S30MS-P

    Abstract: AMB128 S29WS-P S75WS256PEFJF5 S75WS256PEFKFF S75WS-P UtRAM Density Spansion NAND Flash DIE MS512P
    Text: S75WS-P based MCP/POP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash NOR Interface S30MS-P (NAND Interface) ORNAND Flash pSRAM Type 2 S75WS-P based MCP/POP Products Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S75WS-P S30MS-P S30MS-P AMB128 S29WS-P S75WS256PEFJF5 S75WS256PEFKFF UtRAM Density Spansion NAND Flash DIE MS512P

    PC133 registered reference design

    Abstract: micron dram code 10EB2
    Text: PRELIMINARY‡ 256MB, 512MB x72 184 Pin REGISTERED DDR SDRAM DIMMs DDR SDRAM DIMM MT18VDDT3272G, MT18VDDT6472G For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES • • • • • • • • • • •


    Original     		PDF 256MB, 512MB 184-pin, 256MB MT16VR25616AG MT16VR25618AG MT16VR25618AG-840A1 PC133 registered reference design micron dram code 10EB2

    66 ball nor flash

    Abstract: S71WS-P BGA Package 14x14 S71WS128PC0 S71WS512PD0 spansion top marking S29WS128P S29WS256P S29WS512P S29WS-P
    Text: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S71WS-P 66 ball nor flash BGA Package 14x14 S71WS128PC0 S71WS512PD0 spansion top marking S29WS128P S29WS256P S29WS512P S29WS-P

    MT8LSDT1664HG-10EB1

    Abstract: SO-DIMM 144-pin
    Text: 16 MEG x 64 SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE MT8LSDT1664 L H For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View, 100 MHz) 144-Pin Small-Outline DIMM • JEDEC-standard, PC66 and PC100, rev 1.0, 144pin, small-outline, dual in-line memory module


    Original     		PDF PC100, 144pin, 128MB 096-cycle MT8LSDT1664 MT4VR6418AG 256MB MT8VR12816AG MT8LSDT1664HG-10EB1 SO-DIMM 144-pin

    4GB MLC NAND

    Abstract: SAMSUNG NAND Flash MLC
    Text: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) Preliminary FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KFM2G16Q2M-DEBx) KFN4G16Q2M-DEBx) KFM2G16Q2M KFN4G16Q2M 80x11 KFM2G16Q2M) KFN4G16Q2M) 4GB MLC NAND SAMSUNG NAND Flash MLC

    AN8130FBP

    Abstract: No abstract text available
    Text: Panasonic A /D and D /A Converters A N 8 13 0 FBP High Speed Low Power Consumption Bi-CMOS 10-Bit A/D Convertor • Overview The AN830FBP is a 10-bit A/D convertor for image processing which employs the bi-CMOS process to real­ ize the low consumption power.


    OCR Scan     		PDF AN8130FBP 10-Bit AN830FBP 20MHz) 20MHz 0G130G3 AN8130FBP