SMD Magnetics

Abstract: smd marking code pJ 1219 SMD PJ 899
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd magnetics, inductors and ferrite beads vishay Dale vse-db0059-1201e Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

SMD Tantalum Capacitors

Abstract: CECC 30801-001
Contextual Info: VISHAY I N T ER T E C H N O L O GY , I N C . INTERACTIVE data book smd tantalum capacitors vishay sprague vse-db0006-1201e Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

24v ac input to dual rail 5v dc output

Abstract: 24V to 0-10v JW12-01E 10VA
Contextual Info: JUXTA W Series General S p e c ific a tio n s 1. JUXTA Model : W H 1A /V Isolator G ENER AL This isolator converts DC current signals or voltage signals to current or voltage signals. 2. S PE C IFIC A TIO N S 10 Specifications Input signal DC voltage or current signals

BCP56

Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
Contextual Info: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

Contextual Info: 1201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The 1201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

80C552 Development Board

Abstract: philips 80c51 microcontroller 83C552 philips 8031 microcontroller 80c55 80c552 instruction set 80C32 80C51 87C52 EB51
Contextual Info: CEIBO EB-51 Emulation Board - a lit t l \koic¿ OOK Development Tool for 80C51 Microcontrollers FEATURES • Emulates 80C51 Microcontrollers and Derivatives • Support for ROMIess and ROMed Microcontrollers • Real-Time Operation up to 40 MHz • 64K of Code and 64K of Data Memory

Contextual Info: 8 7 6 5 4 2 1 26.39 mm [1.039 in] 128.56 mm [5.061 in] D 3 D 118.51 mm [4.666 in] R 5.00 mm [0.197 in] 62.00 mm 41.00 mm [2.441 in] [1.614 in] 5.85 mm [0.230 in] 56.00 mm [2.205 in] 52.00 mm [2.047 in] C C 3.80 mm [0.150 in] R 121.68 +- 0.54 0.50 mm [4.791

lga 1155

Abstract: AS169-73 8253 integer circuit AS179-92LF AS214-92 CX72302-11 AP157-317 AP163-317 AP172-317 AP178-321
Contextual Info: RF Solutions for WLAN Spring 2004 Skyworks — Leading Supplier of WLAN Semiconductor Solutions Wireless Local Area Networks WLANs combine data connectivity with user mobility, bringing benefits in productivity, convenience, and cost compared to the traditional LAN. For these advantages to be realized,

STK 4197

Abstract: tyx 8016 STK 4133 II tyx IN 8016 tda 8216 tda 9116 stk 4184 circuit STK 4128 STK 4122 2 PCH 7900
Contextual Info: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 16-BIT SINGLE-CHIP MICROCOMPUTER 7700 Family / 7900 Series 7900 Series Software Manual MITSUBISHI ELECTRIC keep safety first in your circuit designs ! ● Mitsubishi Electric Corporation puts the maximum effort into making semiconductor

po111

Abstract: ELNA capacitor 100 uf 50v transistor a09
Contextual Info: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

ceramic capacitor 103 z 2kv

Contextual Info: 1201E PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The 1201E and PTFA091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and

srf 3417

Abstract: transistor srf 3417 SKY77329 transistor tt 2170 em digrf SKY77519 MARKING CODE EA1 SKY77408 sky72302-21 sky77506
Contextual Info: Product Selection Guide Spring 2007 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog and mixed signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and direct conversion radios are at the heart of many of today’s leading-edge

SIEMENS 3TF47 contactor

Abstract: 3UA50 siemens modules GR 60 48 V 120 A 3TF52 3UA62 SIEMENS 3TF46 contactor siemens mpcb 3TK2827 3tf54 3tf35
Contextual Info: Unmatched safety that meets all your needs LV Switchgear Price List Maximum Retail Price w.e.f. 1st November, 2010 Answers for industry. s Everything Easy SIRIUS SIEMENS – INDUSTRY SECTOR TRAINING CENTER SITRAIN INDIA, KALWA. List of courses at SITRAIN-Kalwa & Authorized Training Centers ATC

avnet

Abstract: 91224 elkay
Contextual Info: Skyworks Sales Representatives AMERICAS Alabama/Mississippi Beacon Electronic Associates, Inc. 7501 S. Memorial Parkway, Suite 105 Huntsville, AL 35802 Telephone: 256 881-5031 Fax: (256) 883-9516 Email: lhouk@beaconmail.com Connecticut/Maine/Massachusetts/

interfacing 8051 with eeprom c source code

Abstract: 8051 interfacing to EEProm MCS-51 MACRO ASSEMBLER V2.2 CPL 3120 interfacing 8051 with eeprom source code for eeprom 24LC 8051 interfacing with eeprom intel 8051 micro controller data sheet 74a0 ICE5100
Contextual Info: AN614 Interfacing the 8051 with 2-wire Serial EEPROMs Author: Mike Rosenfield Microchip Technology Inc. INTERFACING MICROCHIP SERIAL EEPROMS TO THE INTEL 8051 FAMILY OF MICROCONTROLLERS Many designers today are implementing embedded systems that require low cost non-volatile memory.

LA 5461

Contextual Info: 8 7 6 5 4 3 2 1 133.00 mm [5.236 in] 118.00 mm [4.646 in] D 50.11 mm [1.973 in] X D 6.00 mm [0.236 in] 108.00 mm 86.00 mm [4.252 in] [3.386 in] 96.00 mm [3.780 in] 101.00 mm [3.976 in] C C Y 4.25 mm [0.167 in] X SECTION X-X 124.00 +- 0.54 0.50 mm [4.882 +0.02

priority encoder 16 to 4 74148

Abstract: application of encoder 74148 16 lines to 4 lines encoder IC 74148
Contextual Info: NEWBRIDGE MICROSYSTEMS NEWBRIDGE t,4E » • bSflfllDl O D O l ì l E S73 ■ FEBRUARY W90 NBMC CA29C632A MICROSYSTEMS WINDOW ADDRESSABLE MEMORY • 32 simultaneous range comparisons every 80 nsec up to 32 bits wide « Maximum processing throughput of 12.8 Gbits/s

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

1457N1201

Contextual Info: 8 7 6 5 4 3 2 1 129.00 mm [5.079 in] 50.11 +- 0.00 0.18 mm 114.00 mm [4.488 in] D [1.973 X +0.000 - 0.007 ] in D 6.00 mm [0.236 in] 108.00 mm 86.00 mm [4.252 in] [3.386 in] 96.00 +- 0.00 0.18 mm 101.00 +- 0.00 0.18 mm [ [3.976 ] 3.780 +- 0.000 0.007 in +0.000

8051 interfacing to EEProm

Abstract: interfacing 8051 with eeprom c source code 7b00 an6143 AN61437 24LCXX AN536 AN614 ASM51 ICE5100
Contextual Info: AN614 Interfacing the 8051 with 2-wire Serial EEPROMs Author: TIMING DATA Mike Rosenfield Memory Products Division INTERFACING MICROCHIP SERIAL EEPROMS TO THE INTEL 8051 FAMILY OF MICROCONTROLLERS Many designers today are implementing embedded systems that require low cost non-volatile memory.

BCP56

Abstract: LM7805 PTFA091201E PTFA091201F PTFA091201EV4
Contextual Info: 1201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The 1201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

mitsubishi 7700 machine instruction

Abstract: tyx 8016 tda 7751 bbc pg 222
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: I Z Z E - r X W Z E O 3 IO - N 3 M is s in u B d N B iim a in o t u ia r a n I A 53353.S02 31V3S ¿ Z — ESEES-C1S 3 a sh (Z do I 133H S) AB q.m B K iB 3 "1 1 1 1 IN S D V r a V 3 0 9"6 b-'OI Z'W 0"2I 8"2I 9'EI t7't7| 2"SI 1 0 1 '£^2W5K03Í H 33VM í§P|OI

potentiometer 10k with knob

Abstract: 201XR504B potentiometer 102 5K Potentiometer 25K 201UR504B 201UR102B 201XR-S 201XR253B 201XR251B 201XR503B
Contextual Info: Series 201 Commercial miniature 19/32" 15.08mm diameter composition trimmer potentiometer • Miniature size — knob 19/32" (15.08mm) diameter • NEW parallel mount type H-201 features in-line terminals, .172" (4.37mm) centers • Special hex hole adjustment available