Contextual Info: Ratioplast - Electronics Homepage: www.ratioplast.de / E-Mail: info@ratioplast.de Tel.:+49 0 5741 / 23661-0 / Fax: +49 (0) 5741 / 23661-20 1.25mm WAFER SMT STRAIGHT / SMT R/A TYPE □-U Part No.:1256MS-XXTB 1:WITH POST 2:W/O POST CONTACT 21 31 With Post

Contextual Info: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mourtted for

Contextual Info: Datasheet R2A20057BM Lithium-Ion Battery Switching Charger IC with Auto Load Current Distribution R03DS0069EJ0100 Rev.1.00 Mar 1, 2013 This is a target specification. Some specs are subject to change. Description R2A20057BM is a semiconductor integrated circuit designed for Lithium-ion battery charger control IC.

Contextual Info: Enhanced H IV f e m o iy S u t e r n s DM512K64DTBDM512K72DTE Multibank Burst EDOEDRAM 5 12Kb x 64/512Kb x 72 Enhanced DRAM DIMM b e . Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache

CQX 86

Abstract: U832 write-verify RaR8 81 u218 A09T
Contextual Info: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: 'i'X — K / Light Emitting Diodes LM-1256 Series 'Jïzm-' LMb1 256 Series 16 X 1 6 V h 1 6 X 1 6 Dot Matrix Displays I W f i ' i j i l l l / Dimensions Unit : mm LM-1256 h & 4- ÿ I Pin ffl7#316X16vh 'J ^ X S iS it o 8 PO OO O OO OO OO O OO O' _ . | Pin 9 i

chqb

Abstract: HY51V16164B
Contextual Info: •HYUNDAI HY51V16164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y51V 16164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V16164B utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques

Contextual Info: Datasheet R2A20056BM Lithium-Ion Battery Charger IC with Auto Load Current Distribution R03DS0075EJ0100 Rev. 1.23 Apr 15,2013 Description R2A20056BM is a semiconductor integrated circuit designed for Lithium-ion battery charger control IC. Built-in Input current limitation circuit compliant with USB requirements and dual output system and battery

Contextual Info: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

hy5118164b

Contextual Info: “H Y U N D A I HY5118164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HV5118164B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

HY51V16404B

Abstract: HY51V16404BR60 si17 MH-750
Contextual Info: •HYUNDAI HY51V16404B Series 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION TheHY51V16404B is the new generation and fast dynamic RAM organizecU,194,304 x 4-bit. The HY51V16404B utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

digi20

Abstract: LM-0355MVWB
Contextual Info: ¡E D Light Emitting D io d e s / L e a d e d ty p e Pin Arrangement Diagram/Internal Circuit Diagram Single Digit LED Numeric Displays • L A 301 B/L series •L A -4 0 1 D/N series Pin Arrangement Diagram Internal Circuit Diagram 9 Pin Arrangement Diagram

U10A-14

Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Contextual Info: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

LM035L

Abstract: la6 dk SPR-325MVW SPR-505MVW
Contextual Info: ¡ED Light Emitting D io d e s / Leaded Package Type Dimensions Diagram (Unit : mm) LED Lamps •SLA-370 •SLA-580 •SLA-570 •SLA-360 0 3.6 + 0 .3 ¿ 3 . 8 ± 0 .3 ^r.o± d!2 ¿ 5 . 0 ± 0.2 4>Z. I ± 0.2 O ^ 152 \ CATHODE CATHODE •SLA-560 #SLR-332

3SA15

Contextual Info: molate 256K X 1 SRAM MSM1256T/V-25/35 Semiconductor Issue 1.2 : April1991 ADVANCE PRODUCT INFORMATION 262,144 x 1 BiCMOS High Speed Static RAM Features Pin Definitions Very Fast Access Times of 25/35 ns Standard 24 pin Dual-in-Line Package Low Power Standby - 50 mW

1480I

Contextual Info: Issue 1.0: September 1989 MSM1256T/V-45/55 MSM1 236T/V 256K x 1 M o n o lith ic C M O S SR A M S .S.It: Í.: S H p le 1 ADVANCE PRODUCT INFORMATION 262,144 x 1 CMOS High Speed Static RAM Pin Definitions Features ge Type: T ' v Very Fast Access Times of 45/55nS

TA 8825 AN

Abstract: 39B4 hyundai HYM532414AM-60 HYM532414AM HYM532414AM60
Contextual Info: “HY UNDAI HYM532414A M-Series 4M X 32-bit CMOS DRAM MODULE _ ;_ with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72pin giass-epoxy printed circuit board. 0.1 |iF and 0.01 iiFdecoupling capacitors are mounted

Contextual Info: •«HYUNDAI HYM564414A F-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT _ DESCRIPTION The HYM564414A is a 4M x 64-bit EDO m ode CMOS DRAM m odule consisting of sixteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O .lpF and O.OinF

hy51v18164b

Contextual Info: -HYUNDAI HYM5V64124A Q-Series SO DIMM 1M x 64-bit CMOS DRAM MODULE _with EXTENDED DATA OUT DESCRIPTION The HYM5V64124Ais a 1M x 64-bit ED O mode C M O S DRAM module consisting of four HY51V18164B in 42/42 pin SO J or 44/50 pin TSOP-II and one 2048 bit EEPR O M on a 144 Zig Zag Dual pin glass-epoxy printed circuit

HY5118160

Abstract: HYM532120
Contextual Info: •HYUNDAI HYM532120 W -Series 1 M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120 is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for each

A933A

Contextual Info: Preliminary PC133 Synchronous DRAM - 64Mb, 256Mb Features Multiple Burst Read with Single Write Option • High Performance: ! ! -75 D, CL=3 I I -75A, C L= 3 Automatic and Controlled Precharge Command U nits Data Mask for Read/Write control fc K C lo c k F re q u e n c y

ESI 2160

Abstract: u332 U11B2 cqx 87 u918
Contextual Info: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: Issue 1.0: September 1989 MSM1256T/V-25/35 m i o n A4 r \ i - r * - r i\ # 256K x 1 M onolithic BiCMOS SRAM M S M 1256T /V I s s u e 1 0: S e p t e m b e r 1 9 8 9 ADVANCE PRODUCT INFORMATION 262,144 x 1 BiCMOS High Speed Static RAM Pin Definitions Features

6146 tube

Abstract: HRC85 6146 incoloy tube 6146 16389 6146 datasheet diode 6146 Heater Finned gas thermostat
Contextual Info: NEC: Cl. I, Div. 1 & 2, Groups B*, C & D IEC: Cl. I, Zones 1 & 2, Group IIB & H2* NEMA: 7B*CD XC Series Explosionproof Electric Heaters 3A Applications: Standard Features: • Sloped-top cabinet prevents objects that restrict airflow from being set on top