Untitled
Abstract: No abstract text available
Text: Ratioplast - Electronics Homepage: www.ratioplast.de / E-Mail: info@ratioplast.de Tel.:+49 0 5741 / 23661-0 / Fax: +49 (0) 5741 / 23661-20 1.25mm WAFER SMT STRAIGHT / SMT R/A TYPE □-U Part No.:1256MS-XXTB 1:WITH POST 2:W/O POST CONTACT 21 31 With Post
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1256MS-XXTB
1256MR-21TB-U
1256MR-31TB-U
1256MR-41TB-U
1256MR-XXTB-U
1256MRA-05TB-U
1256MRA-07TB-U
1256MRA-09TB-U
1256MRA-11TB-U
1256MRA-13TB-U
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Untitled
Abstract: No abstract text available
Text: Datasheet R2A20057BM Lithium-Ion Battery Switching Charger IC with Auto Load Current Distribution R03DS0069EJ0100 Rev.1.00 Mar 1, 2013 This is a target specification. Some specs are subject to change. Description R2A20057BM is a semiconductor integrated circuit designed for Lithium-ion battery charger control IC.
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R2A20057BM
R03DS0069EJ0100
R2A20057BM
TH05-3H103F
NCP15WF104F03RC
R03DS0069EJ0100
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CQX 86
Abstract: U832 write-verify RaR8 81 u218 A09T
Text: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DTE/DM512K72DTE
512Kb
64/512Kb
168BD5-TR
DM512K72DTE
72-bit
CQX 86
U832
write-verify
RaR8 81
u218
A09T
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Untitled
Abstract: No abstract text available
Text: Datasheet R2A20056BM Lithium-Ion Battery Charger IC with Auto Load Current Distribution R03DS0075EJ0100 Rev. 1.23 Apr 15,2013 Description R2A20056BM is a semiconductor integrated circuit designed for Lithium-ion battery charger control IC. Built-in Input current limitation circuit compliant with USB requirements and dual output system and battery
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R2A20056BM
R03DS0075EJ0100
R2A20056BM
mA/1000mA/1500mA/1800mA/Limitless/Suspend
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U10A-14
Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Text: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DT6/DM512K72DT6
512Kb
64/512Kb
168BD5-TR
DM512K72DT
72-bit
U10A-14
U11A-8
CQX 86
512kx8 dram simm
cqx 87
u12A
U11C
U832
U12A-14
u318
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6146 tube
Abstract: HRC85 6146 incoloy tube 6146 16389 6146 datasheet diode 6146 Heater Finned gas thermostat
Text: NEC: Cl. I, Div. 1 & 2, Groups B*, C & D IEC: Cl. I, Zones 1 & 2, Group IIB & H2* NEMA: 7B*CD XC Series Explosionproof Electric Heaters 3A Applications: Standard Features: • Sloped-top cabinet prevents objects that restrict airflow from being set on top
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14-gauge
940mm)
1400mm)
1654mm)
796mm)
1256mm)
1511mm)
6146 tube
HRC85
6146
incoloy
tube 6146
16389
6146 datasheet
diode 6146
Heater Finned
gas thermostat
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Untitled
Abstract: No abstract text available
Text: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mourtted for
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HYM532220A
32-bit
HY5118160B
HYM532220AW/SLW/TW/SLTW
HYM532220AWG/SLWG
880mW
825mW
70MIN.
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Untitled
Abstract: No abstract text available
Text: Enhanced H IV f e m o iy S u t e r n s DM512K64DTBDM512K72DTE Multibank Burst EDOEDRAM 5 12Kb x 64/512Kb x 72 Enhanced DRAM DIMM b e . Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache
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DM512K64DTBDM512K72DTE
/512Kb
168BD5-TR
72-bit
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Untitled
Abstract: No abstract text available
Text: 'i'X — K / Light Emitting Diodes LM-1256 Series 'Jïzm-' LMb1 256 Series 16 X 1 6 V h 1 6 X 1 6 Dot Matrix Displays I W f i ' i j i l l l / Dimensions Unit : mm LM-1256 h & 4- ÿ I Pin ffl7#316X16vh 'J ^ X S iS it o 8 PO OO O OO OO OO O OO O' _ . | Pin 9 i
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LM-1256
316X16vh
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chqb
Abstract: HY51V16164B
Text: •HYUNDAI HY51V16164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y51V 16164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V16164B utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques
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HY51V16164B
16-bit
16164B
16-bit.
42/42pin
1AD59-10-MAY95
0Q315
chqb
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Untitled
Abstract: No abstract text available
Text: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V16400A
HY51V16400A
HY51V16400Ato
4b75Dfifl
1AD31-00-MAY95
0QG441D
HY51V16400AJ
HY51V16400ASU
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hy5118164b
Abstract: No abstract text available
Text: “H Y U N D A I HY5118164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HV5118164B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5118164B
16-bit
16-bit.
HV5118164B
12Cjj^
Q004fiBS
1AD58-10-MAY95
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HY51V16404B
Abstract: HY51V16404BR60 si17 MH-750
Text: •HYUNDAI HY51V16404B Series 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION TheHY51V16404B is the new generation and fast dynamic RAM organizecU,194,304 x 4-bit. The HY51V16404B utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY51V16404B
TheHY51V16404B
1AD51
-10-MAY95
4b75Dflfl
HY51V16404BJ
HY51V16404BSLJ
HY51V16404BR60
si17
MH-750
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digi20
Abstract: LM-0355MVWB
Text: ¡E D Light Emitting D io d e s / L e a d e d ty p e Pin Arrangement Diagram/Internal Circuit Diagram Single Digit LED Numeric Displays • L A 301 B/L series •L A -4 0 1 D/N series Pin Arrangement Diagram Internal Circuit Diagram 9 Pin Arrangement Diagram
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Untitled
Abstract: No abstract text available
Text: HYM532414A M-Series •HYUNDAI 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ^decoupling capacitors are mounted
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HYM532414A
32-bit
HY5117404A
HYM532414AM/ASLM/ATM/ASLTM
HYM532414AMG/ASLMG/ATMG/ASLTMG
HYM532414A
Hb75GÃ
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3SA15
Abstract: No abstract text available
Text: molate 256K X 1 SRAM MSM1256T/V-25/35 Semiconductor Issue 1.2 : April1991 ADVANCE PRODUCT INFORMATION 262,144 x 1 BiCMOS High Speed Static RAM Features Pin Definitions Very Fast Access Times of 25/35 ns Standard 24 pin Dual-in-Line Package Low Power Standby - 50 mW
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MSM1256T/V-25/35
MIL-STD-883C
April1991
GND12
A0-A17
3SA15
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1480I
Abstract: No abstract text available
Text: Issue 1.0: September 1989 MSM1256T/V-45/55 MSM1 236T/V 256K x 1 M o n o lith ic C M O S SR A M S .S.It: Í.: S H p le 1 ADVANCE PRODUCT INFORMATION 262,144 x 1 CMOS High Speed Static RAM Pin Definitions Features ge Type: T ' v Very Fast Access Times of 45/55nS
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MSM1256T/V-45/55
236T/V
45/55nS
MIL-STD-883C
GND12
MSM1256TM
1480I
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TA 8825 AN
Abstract: 39B4 hyundai HYM532414AM-60 HYM532414AM HYM532414AM60
Text: “HY UNDAI HYM532414A M-Series 4M X 32-bit CMOS DRAM MODULE _ ;_ with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72pin giass-epoxy printed circuit board. 0.1 |iF and 0.01 iiFdecoupling capacitors are mounted
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HYM532414A
32-bit
HY5117404A
PIIona72pinglass-epoxyprintedcircuitboard
HYM532414AM/ASLM/ATM/ASLTM
HYM532414AMG/ASLMG/ATMG/ASLTMG
0-25JMAX
4b75DÃ
TA 8825 AN
39B4
hyundai
HYM532414AM-60
HYM532414AM
HYM532414AM60
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Untitled
Abstract: No abstract text available
Text: •«HYUNDAI HYM564414A F-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT _ DESCRIPTION The HYM564414A is a 4M x 64-bit EDO m ode CMOS DRAM m odule consisting of sixteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O .lpF and O.OinF
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HYM564414A
64-bit
HY5117804B
HYM564414AFG/ATFG/ASLFG/ASLTFG
004i2
Mb750flfl
00057flfl
1EC07-10JAN88
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hy51v18164b
Abstract: No abstract text available
Text: -HYUNDAI HYM5V64124A Q-Series SO DIMM 1M x 64-bit CMOS DRAM MODULE _with EXTENDED DATA OUT DESCRIPTION The HYM5V64124Ais a 1M x 64-bit ED O mode C M O S DRAM module consisting of four HY51V18164B in 42/42 pin SO J or 44/50 pin TSOP-II and one 2048 bit EEPR O M on a 144 Zig Zag Dual pin glass-epoxy printed circuit
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HYM5V64124A
64-bit
HYM5V64124Ais
HY51V18164B
HYM5V64124AQG/ATQG/ASLQG/ASLTQG
1CE16-10-APR96
HYM5V64124AQG
HYM5V64124ASLQG
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HY5118160
Abstract: HYM532120
Text: •HYUNDAI HYM532120 W -Series 1 M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120 is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for each
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HYM532120
32-bit
HY5118160
HYM532120W/SLW/TW/SLTW
HYM532120WG/SLWG
HYM532120T/SLT
4b750flfl
1CC03-10-DEC94
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A933A
Abstract: No abstract text available
Text: Preliminary PC133 Synchronous DRAM - 64Mb, 256Mb Features Multiple Burst Read with Single Write Option • High Performance: ! ! -75 D, CL=3 I I -75A, C L= 3 Automatic and Controlled Precharge Command U nits Data Mask for Read/Write control fc K C lo c k F re q u e n c y
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PC133
256Mb
cycles/64ms
256Mb
A933A
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ESI 2160
Abstract: u332 U11B2 cqx 87 u918
Text: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64D
6/DM512K720T6MultibankEDO
512Kb
DM512K72DT6-12
72-blt
ESI 2160
u332
U11B2
cqx 87
u918
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Untitled
Abstract: No abstract text available
Text: Issue 1.0: September 1989 MSM1256T/V-25/35 m i o n A4 r \ i - r * - r i\ # 256K x 1 M onolithic BiCMOS SRAM M S M 1256T /V I s s u e 1 0: S e p t e m b e r 1 9 8 9 ADVANCE PRODUCT INFORMATION 262,144 x 1 BiCMOS High Speed Static RAM Pin Definitions Features
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MSM1256T/V-25/35
1256T
25/35nS
MIL-STD-883C
Dout10
GND12
MSM1256THMB-25
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