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    Cypress Semiconductor MB95F128MBPF-G-JNE1

    NO WARRANTY
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    DigiKey MB95F128MBPF-G-JNE1 Bulk 695 1
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    Cypress Semiconductor MB95F128MBPF-G-N9E1

    NO WARRANTY
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    DigiKey MB95F128MBPF-G-N9E1 Tray 310 1
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    Amphenol ProLabs CF-128MB-C

    JEDEC Standard 128MB 68-pin Comp
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    DigiKey CF-128MB-C 1
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    Infineon Technologies AG MB95F128MBPF-GE1

    IC MCU 8BIT 60KB FLASH
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    Infineon Technologies AG MB95F128MBPF-G-JNE1

    IC MCU 8BIT 60KB FLASH 100QFP
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    128MB_ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    128MbRDRAMs Rambus Rambus SO-RIMM Module (with 64Mb RDRAMs) Original PDF

    128MB_ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IBM "embedded dram"

    Abstract: m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys
    Text: ABSTRACT MODERN DRAM ARCHITECTURES by Brian Thomas Davis Co-Chair: Assistant Professor Bruce Jacob Co-Chair: Professor Trevor Mudge Dynamic Random Access Memories DRAM are the dominant solid-state memory devices used for primary memories in the ubiquitous microprocessor systems of


    Original     		PDF conn95] 64-Mbit Woo00] EE380 class/ee380/ Wulf95] Xanalys00] Yabu99] IBM "embedded dram" m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys

    micron lpddr

    Abstract: 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged
    Text: 128Mb: x16, x32 Mobile LPDDR SDRAM AT Addendum Features Mobile LPDDR SDRAM AT Addendum MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS


    Original     		PDF 128Mb: MT46H8M16LF MT46H4M32LF 09005aef835b8f7c 09005aef835b8e70 micron lpddr 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged

    s11 stopping compound

    Abstract: DEF01
    Text: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 128Mb: MT46H8M16LF MT46H4M32LF 138ns. 09005aef8331b3e9/Source: 09005aef8331b3ce s11 stopping compound DEF01

    cr1 5 p26z

    Abstract: No abstract text available
    Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ


    Original     		PDF 128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 cr1 5 p26z

    09005aef8091e66d

    Abstract: MT48LC16M8A2BB
    Text: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive


    Original     		PDF 128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef8091e66d MT48LC16M8A2BB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 128Mb: MT46H8M16LF MT46H4M32LF 09005aef8331b3e9 09005aef8331b3ce

    MT48LC16M8A2BB

    Abstract: No abstract text available
    Text: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • Plastic package – OCPL2 – 54-pin TSOP II 400 mil – 54-pin TSOP II (400 mil) Pb-free


    Original     		PDF 128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 54-pin 60-ball 54-ball MT48LC16M8A2BB

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 128Mb: MT46H8M16LF MT46H4M32LF 09005aef82ce3074/Source: 09005aef82ce20c9

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 128Mb: x16 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: • Temperature compensated self refresh TCSR • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be


    Original     		PDF 128Mb: MT48H8M16LF 096-cycle 09005aef8237e877/Source: 09005aef8237e8d8

    MT48LC4M32B2P

    Abstract: marking 6a2 smd 6A 1176
    Text: 128Mb: x32 SDRAM Features SDR SDRAM MT48LC4M32B2 – 1 Meg x 32 x 4 Banks Features Options Marking • Configuration – 4 Meg x 32 1 Meg x 32 x 4 banks • Package – OCPL1 – 86-pin TSOP II (400 mil) – 86-pin TSOP II (400 mil) Pb-free – 90-ball VFBGA (8mm x 13mm)


    Original     		PDF 128Mb: MT48LC4M32B2 PC100-compliant 4096-cycle 09005aef80872800 MT48LC4M32B2P marking 6a2 smd 6A 1176

    elpida lpddr2

    Abstract: Elpida LPDDR2 Memory lpddr2 samsung* lpddr2 micron lpddr2 samsung lpddr2 ELPIDA lpddr lpddr lpddr2 datasheet ELPIDA mobile dram LPDDR2
    Text: 128Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks MT46H4M32LF – 1 Meg x 32 x 4 Banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 8 Meg x 16 2 Meg x 16 x 4 banks – 4 Meg x 32 (1 Meg x 32 x 4 banks)


    Original     		PDF 128Mb: MT46H8M16LF MT46H4M32LF 60-ball 90-ball 09005aef8331b3e9 elpida lpddr2 Elpida LPDDR2 Memory lpddr2 samsung* lpddr2 micron lpddr2 samsung lpddr2 ELPIDA lpddr lpddr lpddr2 datasheet ELPIDA mobile dram LPDDR2

    micron vccp

    Abstract: TN-45-13 UtRAM Density micron 128MB NOR FLASH K1B2816
    Text: TN-45-13: CellularRAM replacing UtRAM Introduction Technical Note Using CellularRAM to Replace UtRAM Introduction The Micron family of CellularRAM™ devices is designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring


    Original     		PDF TN-45-13: 09005aef8201fbdc TN4513 09005aef8201fb90/Source: micron vccp TN-45-13 UtRAM Density micron 128MB NOR FLASH K1B2816

    MT48LC16M8A2BB

    Abstract: No abstract text available
    Text: 128Mb: x4, x8, x16 Automotive SDRAM Features Automotive SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive


    Original     		PDF 128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef84baf515 x4x8x16 MT48LC16M8A2BB

    MT48LC16M8A2BB

    Abstract: No abstract text available
    Text: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive


    Original     		PDF 128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 09005aef8091e66d x4x8x16 MT48LC16M8A2BB

    Untitled

    Abstract: No abstract text available
    Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC – 1.7–3.3V1 VCCQ


    Original     		PDF 128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65

    mt46

    Abstract: No abstract text available
    Text: Preliminary‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features Figure 1: • VDD = 1.7–1.95V, VDDQ = 1.7–1.95V


    Original     		PDF 128Mb: MT46H8M16LF 09005aef822b7e27/Source: 09005aef822b7dd6 mt46

    MT48LC8M16A2B4

    Abstract: MT48LC16M8A2BB PC133 registered reference design
    Text: Preliminary‡ 128Mb: x4, x8, x16 Automotive SDRAM Features Automotive SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive


    Original     		PDF 128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef84baf515 x4x8x16 MT48LC8M16A2B4 MT48LC16M8A2BB PC133 registered reference design

    MT48LC16M8A2BB

    Abstract: No abstract text available
    Text: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • Plastic package – OCPL2 – 54-pin TSOP II 400 mil – 54-pin TSOP II (400 mil) Pb-free


    Original     		PDF 128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 09005aef8091e66d x4x8x16 MT48LC16M8A2BB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive


    Original     		PDF 128Mb: MT48H8M16LF MT48H4M32LF 09005aef832ff1ea 09005aef832ff1ac

    Untitled

    Abstract: No abstract text available
    Text: 128 Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ


    Original     		PDF MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65

    micron marking MT48LC8M16A2B4

    Abstract: MT48LC16M8A2BB
    Text: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options Marking • Configurations – 32 Meg x 4 8 Meg x 4 x 4 banks – 16 Meg x 8 (4 Meg x 8 x 4 banks)


    Original     		PDF 128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef8091e66d micron marking MT48LC8M16A2B4 MT48LC16M8A2BB

    MT45W8MW16BGX-7013LWT

    Abstract: MT45W8MW16 FBGA DECODER MT45W8MW16BGX
    Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/ Page/Burst CellularRAM 1.5 Memory Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC


    Original     		PDF 128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 MT45W8MW16BGX-7013LWT MT45W8MW16 FBGA DECODER MT45W8MW16BGX

    8M16

    Abstract: MT48H8M16LFB4-8 MT48 MT48H8M16LF
    Text: 128Mb: x16 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF - 2 Meg x 16 x 4 banks Features Figure 1: • VDD/VDDQ = 1.70–1.95V • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be


    Original     		PDF 128Mb: MT48H8M16LF 096-cycle 09005aef8237e877/Source: 09005aef8237e8d8 8M16 MT48H8M16LFB4-8 MT48

    MT48LC16M8A2BB

    Abstract: No abstract text available
    Text: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks MT48LC8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive


    Original     		PDF 128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 09005aef8091e66d x4x8x16 MT48LC16M8A2BB