MOSFET SOT-23 marking code M2
Abstract: No abstract text available
Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si2312BDS
2002/95/EC
O-236
OT-23)
Si2312BDS-T1-E3
Si2312BDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
MOSFET SOT-23 marking code M2
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SMD 0402
Abstract: No abstract text available
Text: 2381 553 2.6/MLV0402E3.3T Vishay BCcomponents SMD 0402 Multilayer Varistor FEATURES • Surface mount multilayer surge suppressor Inherent bidirectional clamping Excellent energy/volume ratio Suitable for reflow soldering Compliant to RoHS directive 2002/95/EC
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6/MLV0402E3.
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
SMD 0402
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RC32 VISHAY
Abstract: crc50
Text: RCMM Vishay Sfernice Molded Metal Film Resistors FEATURES • 0.25 W to 1 W at 70 °C • NF C 83-230 RC21U-31U-41U-32 • CECC 40 100 • High insulation > 107 MΩ • Great mechanical strength • Termination = Pure matte tin • Compliant to RoHS directive 2002/95/EC
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RC21U-31U-41U-32)
2002/95/EC
RCMM02
RCMM05
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
RC32 VISHAY
crc50
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Untitled
Abstract: No abstract text available
Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive
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ICTE18C,
1N6373
1N6386
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
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ILD252-X009T
Abstract: IL252X001 IL252-X001
Text: IL250, IL251, IL252, ILD250, ILD251, ILD252 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, with Base Connection FEATURES A/C 1 6 B C/A 2 5 C • Built-in reverse polarity input protection NC 3 4 E • Improved CTR symmetry
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IL250,
IL251,
IL252,
ILD250,
ILD251,
ILD252
2002/95/EC
2002/96/EC
i179037-1
UL1577,
ILD252-X009T
IL252X001
IL252-X001
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Untitled
Abstract: No abstract text available
Text: T93 Vishay Sfernice 3/8" Square Multi-Turn Cermet Trimmer FEATURES • Industrial grade • 0.5 W at 70 °C • Tests according to CECC 41000 or IEC 60393-1 The T93 is a small size trimmer - 3/8" x 3/8" x 3/16" answering PC board mounting requirements. Five versions are available which differ by the position of the
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2002/95/EC
T93XA
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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40MT160
Abstract: 40MT140 100mt160
Text: 40MT1.0P.PbF, 70MT1.0P.PbF, 100MT1.0P.PbF Series Vishay High Power Products Three Phase Bridge Power Module , 45 A to 100 A FEATURES • Low VF • Low profile package • Direct mounting to heatsink • Flat pin/round pin versions with PCB solderable terminals
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40MT1
70MT1
100MT1
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
40MT160
40MT140
100mt160
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SUP90P06-09L
Abstract: No abstract text available
Text: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS
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SUP90P06-09L
2002/95/EC
O-220AB
SUP90P06-09L-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SUP90P06-09L
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B8JT
Abstract: No abstract text available
Text: FES F,B 8AT thru FES(F,B)8JT Vishay General Semiconductor Ultrafast Plastic Rectifier TO-220AC FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability
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O-220AC
ITO-220AC
O-263AB
J-STD-020,
ITO-220AC
2002/95/EC
2002/96/EC
2011/65/EU
B8JT
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5900AS
Abstract: 1600AS TP3B476 6500AS 6300AS 2500AS 6700as TP3E107 3800as
Text: TP3 www.vishay.com Vishay Sprague Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT Molded Case, High Performance, Automotive Grade FEATURES • AEC-Q200 qualified • Low ESR • 100 % surge current tested B, C, D, and E case sizes • High ripple current carrying capability
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AEC-Q200
QC300801/US0001
EIA535BAAC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
5900AS
1600AS
TP3B476
6500AS
6300AS
2500AS
6700as
TP3E107
3800as
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Vishay DaTE CODE tsop-6
Abstract: si3410
Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si3410DV
2002/95/EC
Si3410DV-T1-E3
Si3410DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Vishay DaTE CODE tsop-6
si3410
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vs-10bq100
Abstract: DIODE V1J marking code V1j marking code V1J diode 95034 vs10bq100
Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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VS-10BQ100PbF
J-STD-020,
2002/95/EC
VS-10BQ100PbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
vs-10bq100
DIODE V1J marking code
V1j marking code
V1J diode
95034
vs10bq100
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Untitled
Abstract: No abstract text available
Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si7613DN
2002/95/EC
Si7613DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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BZT52C5V1-V
Abstract: BZT52C43V
Text: BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power zener diodes • These diodes are also available in other case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener
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BZT52-V-Series
OT-23
BZX84
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
GS18/10
BZT52C5V1-V
BZT52C43V
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IRFZ48 mosfet driver
Abstract: No abstract text available
Text: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching
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IRFZ48RS,
IRFZ48RL,
SiHFZ48RS
SiHFZ48RL
IRFZ48,
SiHFZ48
2002/95/EC
O-262)
O-263)
2011/65/EU
IRFZ48 mosfet driver
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s8058
Abstract: No abstract text available
Text: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance
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Si7120DN
Si7120DN-T1-E3
Si7120DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
s8058
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5302D
Abstract: No abstract text available
Text: DG428, DG429 Vishay Siliconix Single 8-Ch/Differential 4-Ch Latchable Analog Multiplexers DESCRIPTION FEATURES The DG428, DG429 analog multiplexers have on-chip address and control latches to simplify design in microprocessor based applications. Break-before-make
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DG428,
DG429
DG429
DG428
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
5302D
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565r
Abstract: No abstract text available
Text: 7 TH IS DRAWING COPYRIGHT IS U N P U B LIS H E D . - RELEASED FOR 5 4 3 2 PUBLICATION ALL RIGHTS RESERVED. 53 CM By R E V IS IO N S LTR DE S C R IP T IO N G1 DWN DATE RK HMR 12MAR1 REVISED PER E C O - 1 1 - 0 0 5 0 2 7 APVD D D 1 . BULK 0.1 3 2 5 .9 1- 0 .2 5
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12MAR11
CIRC50
UL94V-0,
565r
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BG41
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEAS ED FO R ALL 2 P U B L IC A T IO N RIGHTS MOD LOC 2 3 BD RESERVED. D IS T R E V IS IO N S 35 P LTR D E S C R IP T IO N E1 R E V IS E D PER DATE ECO-11-005027 DWN APVD RK HMR 12MAR11 D D 00 t O N CN ^
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12MAR11
BG41
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ECO-11-005027
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 2 3 U N P U B L IS H E D . RELEASED FOR ALL P U B L IC A T IO N R IG H T S LOC RESERVED. AF D IS T REVISIONS 50 D E S C R IP T IO N R EVISED D 1 PER ECO-11-005027 SUPPLIED '2\ DWN IN RK HMR 12MAR11 LOOSE PIECE APVD FORM. 0 . 0 0 2 5 4 [ .0 0 01 0 0] MIN THK TIN
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ECO-11-005027
12MAR11
T20CT|
ECO-11-005027
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114212
Abstract: No abstract text available
Text: 4 2 3 T H IS DR AW IN G IS U N P U B L IS H E D . R E LE A S E D FO R PU B LIC ATIO N R E V IS IO N S 50 ALL RIGHTS R ESERVED . CO PYRIG H T - D E S C R IP T IO N REVISED PER E C O - 1 1 - 0 0 5 0 2 7 12MAR1 RK HMR D D . 2 7 5 MAX TOTAL WIDTH FUNNEL ENTRY
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12MAR11
114212
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 2 3 RELEASED FOR ALL P U B L IC A T IO N R IG H T S LOC RESERVED. AF D IS T REVISIONS 50 D E S C R IP T IO N R EVISED PER DWN ECO-11-005027 APVD RK HMR 12MAR11 D D 1 SUPPLIED 2\ IN LOOSE PRELIMINARY - PIECE.
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12MAR11
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 RELEASED FOR PUBLICATION loc ALL RIGHTS RESERVED. By - REVISIONS dist AD 0 0 • —P“1 ETR A2 I DESCRIPTION REVISED PER I DÂfË ECO-11-005027 I DWN I APVD RK HMR 12MAR11 D D 1.27 /r /r [.050] REF f A 1 6 2 .5 6 [6 .4 0 0 ]
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05N0V04
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fido
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G S U N P U B L IS H E D . 2 RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - .- R E V IS IO N S RESERVED. G - LTR D2 D E S C R IP T IO N R EVISED PER DATE ECO—1 1 - 0 0 5 0 2 7 DWN A PVD RK HMR 12MAR11 MAX FOR
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12MAR11
fido
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