transistor dtc114
Abstract: DTC114 df3200 dtc123je ic dtc114 DTC114EE DTC114TE DTC114YE DTC123EE DTC124EE
Text: DTC114EE Series Bias Resistor Transistor NPN Silicon 3 P b Lead Pb -Free COLLECTOR 3 1 2 R1 1 BASE R2 SC-89 (SOT-523F) 2 EMITTER Maximum Ratings (TA=25°C unless otherwise noted) Rating Symbol VCEO VCBO Value 50 Unit V 50 V IC 100 mA Symbol Max Unit PD 200
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DTC114EE
SC-89
OT-523F)
12-Jun-06
DTC114
SC-89
50BSC
transistor dtc114
df3200
dtc123je
ic dtc114
DTC114TE
DTC114YE
DTC123EE
DTC124EE
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TS53
Abstract: No abstract text available
Text: TS53Y Vishay Sfernice Surface Mount Miniature Trimmers Single-Turn Cermet Sealed FEATURES • 0.25 Watt at 70 °C RoHS • For PCB version see T53Y series COMPLIANT • Wide ohmic range 10 Ω to 1 MΩ • Small size for optimum packing density • Suitable for both manual or automatic operation
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TS53Y
TS53YL
TS53J
TS53YL
TS53YJ
08-Apr-05
TS53
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Si4682DY
Abstract: Si4682DY-T1-E3
Text: Si4682DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 ID (A)a rDS(on) (Ω) 0.0094 at VGS = 10 V 16 0.0135 at VGS = 4.5 V 13 Qg (Typ) 11 nC • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET® Power MOSFET
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Si4682DY
Si4682DY-T1-E3
S-61013-Rev.
12-Jun-06
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Si9424BDY-T1-E3
Abstract: Si9424BDY Si9424BDY-T1
Text: Si9424BDY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 7.1 0.033 at VGS = - 2.5 V - 6.1 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT S SO-8 S 1
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Si9424BDY
Si9424BDY-T1
Si9424BDY-T1-E3
08-Apr-05
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DTC114
Abstract: transistor dtc114 dtc114 marking 24 DTC114EE DTC114TE DTC114YE DTC123EE DTC124EE DTC143EE DTC143TE
Text: DTC114EE Series Bias Resistor Transistor NPN Silicon 3 P b Lead Pb -Free COLLECTOR 3 1 1 BASE SC-89 (SOT-523F) R2 2 EMITTER Maximum Ratings (TA=25°C unless otherwise noted) Rating 2 R1 Symbol VCEO VCBO Value 50 Unit V 50 V IC 100 mA Symbol Max Unit PD 200
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DTC114EE
SC-89
OT-523F)
12-Jun-06
DTC114
SC-89
50BSC
transistor dtc114
dtc114 marking 24
DTC114TE
DTC114YE
DTC123EE
DTC124EE
DTC143EE
DTC143TE
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si-7501
Abstract: at90can128 output circuit example SI7501 motor driver RS-458 at90can128 can code example AT90CAN128 TMC428 82c250 AT90CAN128 application note parallel port setting for stepper motor
Text: TMCM-101 One Axis Closed Loop Controller / Driver Module 3A / 28.5V Manual Version: 1.08 June 24th, 2009 Trinamic Motion Control GmbH & Co KG Sternstraße 67 D - 20 357 Hamburg, Germany http://www.trinamic.com TMCM-101 Manual V1.08 Contents 1 2 3 4 Features .3
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TMCM-101
TMCM-101
si-7501
at90can128 output circuit example
SI7501 motor driver
RS-458
at90can128 can code example
AT90CAN128
TMC428
82c250
AT90CAN128 application note
parallel port setting for stepper motor
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Si4736DY
Abstract: No abstract text available
Text: Si4736DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 13 0.0105 at VGS = 4.5 V 12 • TrenchFET Power MOSFET • LITTLE FOOT® Plus Schottky • Shoot-Thru-Free
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Si4736DY
Si4736DY-T1
Si4736DY-T1-E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4462DY Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 1.50 0.510 at VGS = 6.0 V 1.45 • TrenchFET Power MOSFET • PWM Optimized for fast Switching Pb-free Available
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Si4462DY
Si4462DY-T1
Si4462DY-T1-E3
18-Jul-08
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SI4856DY-T1
Abstract: Si4856DY Si4856DY-T1-E3
Text: Si4856DY Vishay Siliconix New Product N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.006 at VGS = 10 V 17 0.0085 at VGS = 4.5 V 14 • TrenchFET Power MOSFETS • 100 % RG Tested Available RoHS* APPLICATIONS COMPLIANT • Buck Converter
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Si4856DY
Si4856DY-T1
Si4856DY-T1-E3
18-Jul-08
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Si4955DY
Abstract: Si4955DY-T1-E3
Text: Si4955DY Vishay Siliconix New Product Asymmetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 - 30 Channel-2 - 20 rDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 0.027 at VGS = - 4.5 V - 7.0
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Si4955DY
0-V/20-V
Si4955DY-T1-E3
08-Apr-05
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74188
Abstract: SiE810DF
Text: SPICE Device Model SiE810DF Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiE810DF
S-60992Rev.
12-Jun-06
74188
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC CE ALL RIGHTS RESERVED. 1 REVISIONS DIST - P LTR 1. ASSEMBLY SHOWN FOR REFERENCE ONLY. SHIPPED LOOSE PIECE AS SHOWN ON PAGE 2. DESCRIPTION DATE DWN APVD B ECR-06-013320
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ECR-06-013320
ECR-11-022292
ECR-13-011633
12JUN06
03NOV2011
30JUL2013
23JUL2004
12AUG2004
13AUG2004
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Si4500BDY
Abstract: Si4500BDY-T1 Si4500BDY-T1-E3
Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 rDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V
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Si4500BDY
Si4500BDY-T1
Si4500BDY-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4923DY Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 8.3 0.031 at VGS = - 4.5 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process Pb-free
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Si4923DY
Si4923DY-T1
Si4923DY-T1-E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4856DY Vishay Siliconix New Product N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.006 at VGS = 10 V 17 0.0085 at VGS = 4.5 V 14 • TrenchFET Power MOSFETS • 100 % RG Tested Available RoHS* APPLICATIONS COMPLIANT • Buck Converter
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Si4856DY
Si4856DY-T1
Si4856DY-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.130 at VGS = - 4.5 V - 1.8 0.170 at VGS = - 2.5 V - 1.5 0.225 at VGS = - 1.8 V - 1.3 • TrenchFET Power MOSFETs • 1.8 V Rated Pb-free Available
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Si1407DL
OT-363
SC-70
Si1407DL-T1
Si1407DL-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch
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Si4493DY
Si4493DY-T1
Si4493DY-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS
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Si4451DY
Si4451DY-T1
Si4451DY-T1-E3
08-Apr-05
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420MM
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS A MATERIAL INSULATOR: NYLON 66 COLOR: WHITE CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 4.20MM ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C FLAMABILITY RATING: UL94-V2
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UL94-V2
28-NOV-07
22-FEB-07
12-JUN-06
420MM
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Si4464DY-T1-E3
Abstract: Si4464DY Si4464DY-T1 72051
Text: Si4464DY Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • TrenchFET Power MOSFET • PWM Optimized for (Lowest Qg and Low RG) Pb-free Available
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Si4464DY
Si4464DY-T1
Si4464DY-T1-E3
08-Apr-05
72051
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SiC730CD9
Abstract: MOSFET LOSSES SYNC BUCK S-61011
Text: SiC734CD9 Vishay Siliconix New Product Fast Switching MOSFETs With Integrated Driver FEATURES • Low-side MOSFET control pin for pre-bias start-up • Undervoltage Lockout for safe operation RoHS • Internal boostrap diode reduces COMPLIANT component count
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SiC734CD9
S-61011
12-Jun-06
SiC730CD9
MOSFET LOSSES SYNC BUCK
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Si4911DY
Abstract: No abstract text available
Text: Si4911DY Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 8.4 0.023 at VGS = - 2.5 V - 7.6 0.029 at VGS = - 1.8 V - 6.8 • TrenchFET Power MOSFET • Advanced High Cell Density Process
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Si4911DY
Si4911DY-T1
Si4911DY-T1-E3
S-61005-Rev.
12-Jun-06
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Si1303DL
Abstract: No abstract text available
Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free
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Si1303DL
OT-323
SC-70
Si1303DL-T1
Si1303DL-T1-E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4682DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 ID (A)a rDS(on) (Ω) 0.0094 at VGS = 10 V 16 0.0135 at VGS = 4.5 V 13 Qg (Typ) 11 nC • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET® Power MOSFET
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Si4682DY
Si4682DY-T1-E3
18-Jul-08
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