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    150V N-CHANNEL MOSFET Search Results

    150V N-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    150V N-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN7254

    Abstract: AN7260 RFL1N12L RFL1N15L
    Text: [ /Title RFL1N 12L, RFL1N1 5L /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm,


    Original     		PDF O205AF) RFL1N12L, RFL1N15L RFL1N12L O-205AF AN7254 AN7260. AN7260 RFL1N12L RFL1N15L

    FDB2570

    Abstract: FDP2570
    Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and


    Original     		PDF FDP2570/FDB2570 FDB2570 FDP2570

    RFL1N15

    Abstract: AN7254 AN7260 RFL1N12 TB334
    Text: RFL1N12, RFL1N15 Semiconductor 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    Original     		PDF RFL1N12, RFL1N15 TA09196. AN7254 AN7260. RFL1N15 AN7260 RFL1N12 TB334

    CBVK741B019

    Abstract: EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions
    Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and


    Original     		PDF FDP2570/FDB2570 CBVK741B019 EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions

    2539a

    Abstract: No abstract text available
    Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and


    Original     		PDF FDP2570/FDB2570 2539a

    FDP79N15

    Abstract: FDPF79N15
    Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V


    Original     		PDF FDP79N15 FDPF79N15 O-220 FDPF79N15

    marking 66a

    Abstract: FDB66N15
    Text: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)


    Original     		PDF FDB66N15 marking 66a FDB66N15

    FDPF79N15

    Abstract: FDP79N15
    Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V


    Original     		PDF FDP79N15 FDPF79N15 O-220 FDPF79N15

    FDA79N15

    Abstract: No abstract text available
    Text: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)


    Original     		PDF FDA79N15 FDA79N15

    79a diode

    Abstract: 150V n-channel MOSFET D 3410 A FDA79N15
    Text: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)


    Original     		PDF FDA79N15 79a diode 150V n-channel MOSFET D 3410 A FDA79N15

    Untitled

    Abstract: No abstract text available
    Text: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)


    Original     		PDF FDB66N15 FDB66N15 FDB66N15TM

    IRF232

    Abstract: IRF230 IRF231 IRF233 TB334
    Text: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF230, IRF231, IRF232, IRF233 IRF232 IRF230 IRF231 IRF233 TB334

    IRF220

    Abstract: IRF223 irf2210 IRF221 IRF222 TB334 MOSFET IRF220
    Text: IRF220, IRF221, IRF222, IRF223 Semiconductor 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF220, IRF221, IRF222, IRF223 IRF220 IRF223 irf2210 IRF221 IRF222 TB334 MOSFET IRF220

    IRF640 applications note

    Abstract: IRF640 IRF642 IRF643 harris IRF640 circuit TA17422 IRF643 RF1S640SM9A for irf640 irf641
    Text: IRF640, IRF641, IRF642, SEMICONDUCTOR IRF643, RF1S640, RF1S640SM IHARRIS 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM RF642, IRF640 applications note IRF640 IRF642 IRF643 harris IRF640 circuit TA17422 IRF643 RF1S640SM9A for irf640 irf641

    Untitled

    Abstract: No abstract text available
    Text: y *“ * RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 120V and 150V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFL1N12, RFL1N15 TA09196. AN7254 AN7260.

    Untitled

    Abstract: No abstract text available
    Text: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF230, IRF231, IRF232, IRF233

    Untitled

    Abstract: No abstract text available
    Text: W vys s' RFP2N12, RFP2N15 Semiconductor 7 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 2A, 120V and 150V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFP2N12, RFP2N15 TA09196. RFP2N12 TB334 AN7254 AN7260 RFP2N15

    ta9192

    Abstract: No abstract text available
    Text: W vys S RFL4N12, RFL4N15 Semiconductor y 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 4A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFL4N12, RFL4N15 TA9192. AN7254 AN7260. ta9192

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 RFR220,

    ifr220

    Abstract: IFU220 IRFU221 IRFU222 ifu221 IRFR222 IFR221 ta96 IRFR220 irfu220
    Text: IRFR220, IRFR221, IRFR222, IRFU220, IR FU221, IRFU222 H A R R IS SEMICONDUCTOR 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFR220, IRFR221, IRFR222, IRFU220, FU221, IRFU222 RFR220, RFR221, RFR222, ifr220 IFU220 IRFU221 IRFU222 ifu221 IRFR222 IFR221 ta96 IRFR220 irfu220

    Untitled

    Abstract: No abstract text available
    Text: if* ? S IRF250, IRF251, IRF252, IRF253 Semiconductor y y 25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 25A and 30A, 150V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF250, IRF251, IRF252, IRF253 RF251,

    TB334

    Abstract: RFP10N12 AN7254 RFM10N12 RFM10N15 RFP10N15 TB-334
    Text: R M S RFM10N12, RFM10N15, RFP10N12, RFP10N15 Semiconductor October 1998 Data Sheet File Number 1445.2 Features 10A, 120V and 150V, 0.300 Ohm, N-Channel Power MOSFETs • 10A, 120V and 150V These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFM10N12, RFM10N15, RFP10N12, RFP10N15 TA09192. RFM10N12 T0-204AA RFM10N12 RFM10N15 TB334 RFP10N12 AN7254 RFP10N15 TB-334

    Untitled

    Abstract: No abstract text available
    Text: tyvvys S IRFP240, IRFP241, IRFP242, IRFP243 Semiconductor y y 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 18A and 20A, 200V and 150V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFP240, IRFP241, IRFP242, IRFP243

    TA17442

    Abstract: TA-1744
    Text: IRFF210, IRFF211, IRFF212, IRFF213 HARRIS S E M I C O N D U C T O R A.BA, January 1998 and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs Features Description • 1 .8A and 2.2A, 150V to 200V These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF210, IRFF211, IRFF212, IRFF213 TB334 RFF210, RFF211, RFF212, IRFF213 TA17442 TA-1744