CTLB039432-004
Abstract: CTLH986-001
Text: 501-624 Qualification Test Report 17Mar08 Rev B XFP Copper Module Direct Attach Cable Assembly and Cage 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco Electronics XFP Copper Module Direct Attach Cable Assembly and Cage to determine its conformance to the requirements of Product Specification 108-2127 Revision B.
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17Mar08
25Aug05
08Dec05.
CTLB039432-004.
30Mar07
13Jul07.
CTLB039432-004
CTLH986-001
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EIA-364-13
Abstract: EIA-364-38 EIA-364-27 EIA-364-28 EIA-364-32 press fit connector EIA-364-13 contact retention
Text: Product Specification 108-2127 17Mar08 Rev B XFP Copper Module Direct Attach Cable Assembly and Cage 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics XFP Copper Module Direct Attach Cable Assembly and Cage.
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17Mar08
08Dec05.
13Jul07.
EIA-364-13
EIA-364-38
EIA-364-27
EIA-364-28
EIA-364-32
press fit connector
EIA-364-13 contact retention
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s8058
Abstract: No abstract text available
Text: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance
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Si7120DN
Si7120DN-T1-E3
Si7120DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
s8058
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Si1499DH
Abstract: Si1499DH-T1-E3
Text: New Product Si1499DH Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b
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Si1499DH
OT-363
SC-70
18-Jul-08
Si1499DH-T1-E3
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SI7100DN
Abstract: No abstract text available
Text: Si7100DN Vishay Siliconix N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0035 at VGS = 4.5 V 35 0.0045 at VGS = 2.5 V 35 VDS (V) 8 Qg (Typ.) 40 nC • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package
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Si7100DN
Si7100DN-T1-E3
Si7100DN-T1-GE3
11-Mar-11
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Si7114DN
Abstract: Si7114DN-T1-E3 Si7114DN-T1-GE3
Text: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0075 at VGS = 10 V 18.3 0.010 at VGS = 4.5 V 15.9 Qg (Typ.) 12.5 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET
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Si7114DN
Si7114DN-T1-E3
Si7114DN-T1-GE3
25lectual
18-Jul-08
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Si7100DN
Abstract: Si7100
Text: Si7100DN Vishay Siliconix N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0035 at VGS = 4.5 V 35 0.0045 at VGS = 2.5 V 35 VDS (V) 8 Qg (Typ.) 40 nC • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package
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Si7100DN
Si7100DN-T1-E3
Si7100DN-T1-GE3
18-Jul-08
Si7100
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BI resistor network
Abstract: 5K10 T14L10 DSA003808
Text: T14L10 Vishay Techno Thick Film Resistor Networks, Dual-In-Line, 10 Bit APPLICATIONS 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches. ELECTRICAL SPECIFICATIONS Ladder network accuracy: ± 1 LSB from 0 °C to + 70 °C Ladder network resistance tolerance: ± 2 %
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T14L10
18-Jul-08
BI resistor network
5K10
T14L10
DSA003808
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Si7110DN
Abstract: Si7110DN-T1-E3 Si7110DN-T1-GE3
Text: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.0053 at VGS = 10 V 21.1 0.0078 at VGS = 4.5 V 17.4 Qg (Typ.) 14 nC PowerPAK 1212-8 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET
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Si7110DN
Si7110DN-T1-E3
Si7110DN-T1-GE3
18-Jul-08
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zigbee module with pic microcontroller
Abstract: Atmel interface with zigbee zigbee pic microcontroller ZigBee zigbee based home automation easybee pcb design of zigbee rf based home automation RF 2.4Ghz antenna 4 channel rf module
Text: EasyBee TM 2.4GHz ZigBee ready IEEE 802.15.4 RF transceiver FlexiPanel Summary Features EasyBee is an IEEE 802.15.4 compliant RF transceiver. It enables designers to easily add ZigBee / IEEE 802.15.4 wireless capability to their products without the need for RF or antenna
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250kbps
CC2420
18-contact
18-pin
ISO9001
17-Mar-08
DS480-14
zigbee module with pic microcontroller
Atmel interface with zigbee
zigbee pic microcontroller
ZigBee
zigbee based home automation
easybee
pcb design of zigbee
rf based home automation
RF 2.4Ghz antenna
4 channel rf module
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Untitled
Abstract: No abstract text available
Text: MCN Vishay Techno Capacitor Networks, Molded SIP FEATURES • • • • • • • Custom schematics available NP0 or X7R capacitors for line terminator Wide operating temperature range - 55 °C to 125 °C Molded epoxy case Solder coated copper terminals
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MIL-STD-202
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance
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Si7120DN
Si7120DN-T1-E3
Si7120DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.0053 at VGS = 10 V 21.1 0.0078 at VGS = 4.5 V 17.4 Qg (Typ.) 14 nC PowerPAK 1212-8 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET
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Si7110DN
Si7110DN-T1-E3
Si7110DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated
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Si7407DN
Si7407DN-T1
Si7407DN-T1-E3
Si7407DN-T1-GE3
11-Mar-11
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Si7114DN
Abstract: Si7114DN-T1-E3 Si7114DN-T1-GE3
Text: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0075 at VGS = 10 V 18.3 0.010 at VGS = 4.5 V 15.9 Qg (Typ.) 12.5 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET
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Si7114DN
Si7114DN-T1-E3
Si7114DN-T1-GE3
08-Apr-05
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Si7114DN
Abstract: Si7114DN-T1-E3 Si7114DN-T1-GE3
Text: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.0075 at VGS = 10 V 18.3 0.010 at VGS = 4.5 V 15.9 Qg (Typ.) 12.5 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET
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Si7114DN
Si7114DN-T1-E3
Si7114DN-T1-GE3
11-Mar-11
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Si7108DN
Abstract: Si7108DN-T1-E3 Si7108DN-T1-GE3
Text: Si7108DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.0049 at VGS = 10 V 22 0.0061 at VGS = 4.5 V 19.7 Qg (Typ.) 20 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET for
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Si7108DN
Si7108DN-T1-E3
Si7108DN-T1
11-Mar-11
Si7108DN-T1-GE3
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Si7110DN
Abstract: Si7110DN-T1-GE3 Si7110DN-T1-E3 s8058
Text: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.0053 at VGS = 10 V 21.1 0.0078 at VGS = 4.5 V 17.4 Qg (Typ.) 14 nC PowerPAK 1212-8 • Halogen-free Option Available • TrenchFET Gen II Power MOSFET
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Si7110DN
Si7110DN-T1-E3
Si7110DN-T1-GE3
08-Apr-05
s8058
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Si7107DN-T1-E3
Abstract: SI7107DN
Text: Si7107DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0108 at VGS = - 4.5 V - 15.3 0.015 at VGS = - 2.5 V - 13.0 0.020 at VGS = - 1.8 V - 11.2 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated
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Si7107DN
Si7107DN-T1-E3
Si7107DN-T1-GE3
08-Apr-05
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SI7116DN-T1-E3
Abstract: No abstract text available
Text: Si7116DN Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.0078 at VGS = 10 V 16.4 0.010 at VGS = 4.5 V 14.5 Qg (Typ.) 15 nC PowerPAK 1212-8 COMPLIANT • Synchronous Rectification • Intermediate Switch
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Si7116DN
Si7116DN-T1-E3
Si7116DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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208E
Abstract: No abstract text available
Text: MCN Vishay Techno Capacitor Networks, Molded SIP FEATURES • • • • • • • Custom schematics available NP0 or X7R capacitors for line terminator Wide operating temperature range - 55 °C to 125 °C Molded epoxy case Solder coated copper terminals
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MIL-STD-202
18-Jul-08
208E
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tansitor
Abstract: CL65 109D CL64 109d606x0050t0 109D305X vishay CL65 CL65 109D
Text: 109D Vishay Wet Tantalum Capacitors Sintered Anode TANTALEX Capacitors for Operation to + 125 °C, Elastomer-Sealed FEATURES • Terminations: standard tin/lead SnPb , 100 % tin (RoHS compliant) available Pb-free Available • Vishay Sprague model 109D tubular
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MIL-DTL-3965.
18-Jul-08
tansitor
CL65
109D
CL64
109d606x0050t0
109D305X
vishay CL65
CL65 109D
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208E
Abstract: No abstract text available
Text: TCN Vishay Techno Capacitors Networks, Coated SIP FEATURES • • • • • NP0 or X7R capacitors for line terminator Wide operating temperature range - 55 °C to 125 °C Epoxy based conformal coating Solder coated copper terminals Solderability per MIL-STD-202 method 208E
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MIL-STD-202
18-Jul-08
208E
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AT91SAM7L-STK Rev. B Starter Kit
Abstract: 6414a DIGITAL ammeter controller based block diagram atmel at91sam CM415-32 STK series with pcb AT86RF230 AT91SAM AT91SAM7L AT91SAM7L128
Text: AT91SAM7L-STK Rev. B Starter Kit . User Guide 6414A–ATARM–12-Sep-08 1-2 6414A–ATARM–12-Sep-08 AT91SAM7L-STK Rev. B Starter Kit User Guide
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AT91SAM7L-STK
12-Sep-08
AT91SAM7L-STK Rev. B Starter Kit
6414a
DIGITAL ammeter controller based block diagram
atmel at91sam
CM415-32
STK series with pcb
AT86RF230
AT91SAM
AT91SAM7L
AT91SAM7L128
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