Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE NUMBER 1N950 1N951 1N952 1N953 1N954 1N955 1N956 CAPACITANCE @ - 4 Vdc 35 50 70 100 35 50 70 Package Style DC Power Dissipation Operating Temperature Topr

"Varactor Diodes"

Abstract: 1N951 1N953 1N956 Knox Semiconductor 1N950 1N952 1N954 1N955
Contextual Info: KNOX SEMICONDUCTOR, INC. GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE NUMBER 1N950 1N951 1N952 1N953 1N954 1N955 1N956 CAPACITANCE @ - 4 Vdc 35 50 70 100 35 50 70 Package Style DC Power Dissipation Operating Temperature Topr Storage Temperature (Tstg)

Contextual Info: 1N953D Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.100p C1/C2 Min. Capacitance Ratio2.4 V(RRM)(V) Rep.Pk.Rev. Voltage2.4 Q Factor Min.7.0 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

1N5283

Abstract: 1N5284 1N5285 1N5286 1N5287 1N5288 1N5289 1N5290 1N5291 1N5292
Contextual Info: ^ KNOX SEMICONDUCTOR INC D E | S5BöS34 000D135 h | > K - 2- Current Regulator and Varactor Tuning Diodes CURRENT REGULATOR FIELD EFFECT DIODES Nom Norn Regulator Current Ip mA @ Vt = 25V Min Max 0.22 0.22 0.27 0.30 0.33 0.39 0.43 0.47 0.56 0.62 0.68 0.75

1N3627

Abstract: IN951 1N950 1N951 1N952 1N953 1N954 1N955 1N956 V100G
Contextual Info: TE L •DYNE COMPONENTS EâE D f i T1 7b a e T -o 7 - J QQQbL.47 1 GENERAL P U R P O SE 1N950-956 S IL IC O N E P IT A X IA L V A R A C T R O N V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S V20G-100G GEOMETRY 415 • ALL EPITAXIAL CONSTRUCTION (P + N N +

Contextual Info: K n o x S e m ic o n d u c t o r , I n c GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE NUMBER CAPACITANCE @ - 4 Vdc CAPACITANCE RANGE 0.1 V dctoM W V QUALITY FACTOR Q @ - 4 Vdc, f = 50 MHz MIN TYP REVERSE VOLTAGE @ 100 mA MAX WORKING VOLTAGE 130

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE N U M BER CAPA C ITA N C E @ - 4 Vdc CA PACITANCE RANGE 0.1 V d c to M W V QUALITY FACTOR Q @ - 4 Vdc, f = 50 M H z MIN TYP REVERSE VOLTAGE @ 100 nA MAX W ORKING

diode 1N951

Abstract: teledyne crystalonics 1N3628
Contextual Info: VARACTOR SELECTO R GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current <10nA low Cost Comments <1.0M* R e p lace s M V 8 3 0 -M V 8 4 0 D O -7 G la s s CV830C V 840 X CV1006-16CV1106-16 X X CV1620CV1650

Contextual Info: 1N52831N5314 L 1N950 m 1N956 Ï i Current Regulator and Varactor Tuning Diodes CURRENT REGULATOR FIELD EFFECT DIODES Nom A A A A A A A A A A A A 1N5283 1N5284 1N5285 1N5286 1N5287 1N5288 1N5289 1N5290 1N5291 1N5292 1N5293 1N5294 A A A A A A A A A A A A A 1N5295

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

2u20 diode

Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
Contextual Info: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors

Contextual Info: 1N950 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . thru 1N956B VOLTAGE VARIABLE CAPACITORS General Purpose Applications ELECTRICAL CHARACTERISTICS i CHARACTERISTICS - 1 at Ta = 25 °C unless otherwise specified TEST CONDITIONS Min. Typ. Max.

VC616

Abstract: VC606 VC608 VC611 VC613 VC619 VC623 VC628 VC634 VC641
Contextual Info: 3074474 EASTRON CORP Sb DE I 3 0 7 4 4 7 4 DD0D101 oT&T-IJ Qo Capacity @4Vdc Pf Minimum Saturation V oltage VC406 VC409 VC414 VC421 VC432 VC446 VC467 7 10 15 22 33 47 68 30 30 30 30 30 30 30 100 100 100 100 100 100 100 VC407 VC410 VC415 VC422 VC433 VC447