Contextual Info: K n o x S e m ic o n d u c t o r , I n c GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE NUMBER CAPACITANCE @ - 4 Vdc CAPACITANCE RANGE 0.1 V dctoM W V QUALITY FACTOR Q @ - 4 Vdc, f = 50 MHz MIN TYP REVERSE VOLTAGE @ 100 mA MAX WORKING VOLTAGE 130

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE N U M BER CAPA C ITA N C E @ - 4 Vdc CA PACITANCE RANGE 0.1 V d c to M W V QUALITY FACTOR Q @ - 4 Vdc, f = 50 M H z MIN TYP REVERSE VOLTAGE @ 100 nA MAX W ORKING

Contextual Info: 1N52831N5314 L 1N950 m 1N956 Ï i Current Regulator and Varactor Tuning Diodes CURRENT REGULATOR FIELD EFFECT DIODES Nom A A A A A A A A A A A A 1N5283 1N5284 1N5285 1N5286 1N5287 1N5288 1N5289 1N5290 1N5291 1N5292 1N5293 1N5294 A A A A A A A A A A A A A 1N5295

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE NUMBER 1N950 1N951 1N952 1N953 1N954 1N955 1N956 CAPACITANCE @ - 4 Vdc 35 50 70 100 35 50 70 Package Style DC Power Dissipation Operating Temperature Topr

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TY PE NUM BER C A P A C IT A N C E @ - 4 V dc C A PA C IT A N C E RANGE 0.1 V d c to M W V Q U A L IT Y FA C T O R Q @ - 4 V d c, f = 50 M H z R E V E R SE VOLTAGE

Contextual Info: 1N950 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . thru 1N956B VOLTAGE VARIABLE CAPACITORS General Purpose Applications ELECTRICAL CHARACTERISTICS i CHARACTERISTICS - 1 at Ta = 25 °C unless otherwise specified TEST CONDITIONS Min. Typ. Max.

"Varactor Diodes"

Abstract: 1N951 1N953 1N956 Knox Semiconductor 1N950 1N952 1N954 1N955
Contextual Info: KNOX SEMICONDUCTOR, INC. GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE NUMBER 1N950 1N951 1N952 1N953 1N954 1N955 1N956 CAPACITANCE @ - 4 Vdc 35 50 70 100 35 50 70 Package Style DC Power Dissipation Operating Temperature Topr Storage Temperature (Tstg)

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

1N5283

Abstract: 1N5284 1N5285 1N5286 1N5287 1N5288 1N5289 1N5290 1N5291 1N5292
Contextual Info: ^ KNOX SEMICONDUCTOR INC D E | S5BöS34 000D135 h | > K - 2- Current Regulator and Varactor Tuning Diodes CURRENT REGULATOR FIELD EFFECT DIODES Nom Norn Regulator Current Ip mA @ Vt = 25V Min Max 0.22 0.22 0.27 0.30 0.33 0.39 0.43 0.47 0.56 0.62 0.68 0.75

1N3627

Abstract: IN951 1N950 1N951 1N952 1N953 1N954 1N955 1N956 V100G
Contextual Info: TE L •DYNE COMPONENTS EâE D f i T1 7b a e T -o 7 - J QQQbL.47 1 GENERAL P U R P O SE 1N950-956 S IL IC O N E P IT A X IA L V A R A C T R O N V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S V20G-100G GEOMETRY 415 • ALL EPITAXIAL CONSTRUCTION (P + N N +

diode 1N951

Abstract: teledyne crystalonics 1N3628
Contextual Info: VARACTOR SELECTO R GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current <10nA low Cost Comments <1.0M* R e p lace s M V 8 3 0 -M V 8 4 0 D O -7 G la s s CV830C V 840 X CV1006-16CV1106-16 X X CV1620CV1650

4812b

Abstract: 44791 4810B
Contextual Info: VARACTOR TUNING DIODES 3E0EC Part Number Product Highlight* Figure Capacitance Maximum of Merit Capacitance at 4 0 V Ratio at VS=4 0 V W orking and f« l d MHz and $0 MHz J a v to v . „ V Voltage pF> 1(45439 1N5440 1N5441 1145442 1NS443 1(45444 1145445

varactor

Abstract: 1N3182 1N5138 1N3947 1N5136 K511 vc299 vc99 MIL-S-19500 1n3945
Contextual Info: Table of Contents ZENER DIODES Page K 1 2 0 -K 5 1 0 K511 - K681 1N4678 - 1N4714 1 N 4 6 1 4 - 1N4627 1N4099 - 1N4121 1N5518 - 1N5546 1N6082 - 1N6091 KZ43A - KZ100A KZ343A - KZ3100A KZ450 - KZ498 CURRENT REGULATOR AND VARACTOR DIODES Page 9 9 9 10 10 11 11

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

IN733A

Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
Contextual Info: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano

2u20 diode

Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
Contextual Info: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors

IN5440

Abstract: OA97 OA83 OA95 diode in4796 OA77 1N5448 OA97 diode 1N4794 OA41
Contextual Info: VARACTOR TUNING DIODES JE D Ë C Product Highlights Minimum Figure Capacitance Maximum iigRSSSiiiSsig:;: of Merit C a paci ta n ce Breakdown at 4 0 V Ratio Working at VR=4 0 V atJ„ 1Q uft and f=1 0 MHz and 50 MHz 2 0 V to V, * V Voltage N u mber <PF Minimum

ZP33A

Abstract: TZP33A zp 33a 1n9638 zp 278 1N52438 TZP10A MTZJ 188 MTZJ 248 1N6233
Contextual Info: Part Marking <Switching Diodes <Rectifier Diodes> <SchoHky Barrier Diodes) 00-4KQ SR) Part No. Part No. Marking Marking ;«tn Marking < Z en er D io d es> Marking DO-34 MSO) RB441Q Marking DO-35<a8D) I; U RB721Q Black = t¿ n > = M M8R DO-340USD] li ,=tftl>=

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

957b

Abstract: ic 957B 1N956B
Contextual Info: 1N 957B thru 1N 992B DO-7 Microsemi Corp. f SANTA ANA. CA T h e ô ioG e e x p e r ts SCOT! S DA I E A Z / / F o r m o r e i n f o r m a ti o n call: 602 94 (-6300 FEATURES SILICON • 6.8 TO 2 00 V Z E N E R V O L T A G E R A N G E • 1N 962B T H R U 1N 992B H A V E JAN . J A N T X A N D J A N T X V Q U A L IF IC A T IO N S