Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE NUMBER 1N950 1N951 1N952 1N953 1N954 1N955 1N956 CAPACITANCE @ - 4 Vdc 35 50 70 100 35 50 70 Package Style DC Power Dissipation Operating Temperature Topr

"Varactor Diodes"

Abstract: 1N951 1N953 1N956 Knox Semiconductor 1N950 1N952 1N954 1N955
Contextual Info: KNOX SEMICONDUCTOR, INC. GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE NUMBER 1N950 1N951 1N952 1N953 1N954 1N955 1N956 CAPACITANCE @ - 4 Vdc 35 50 70 100 35 50 70 Package Style DC Power Dissipation Operating Temperature Topr Storage Temperature (Tstg)

1N5283

Abstract: 1N5284 1N5285 1N5286 1N5287 1N5288 1N5289 1N5290 1N5291 1N5292
Contextual Info: ^ KNOX SEMICONDUCTOR INC D E | S5BöS34 000D135 h | > K - 2- Current Regulator and Varactor Tuning Diodes CURRENT REGULATOR FIELD EFFECT DIODES Nom Norn Regulator Current Ip mA @ Vt = 25V Min Max 0.22 0.22 0.27 0.30 0.33 0.39 0.43 0.47 0.56 0.62 0.68 0.75

1N3627

Abstract: IN951 1N950 1N951 1N952 1N953 1N954 1N955 1N956 V100G
Contextual Info: TE L •DYNE COMPONENTS EâE D f i T1 7b a e T -o 7 - J QQQbL.47 1 GENERAL P U R P O SE 1N950-956 S IL IC O N E P IT A X IA L V A R A C T R O N V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S V20G-100G GEOMETRY 415 • ALL EPITAXIAL CONSTRUCTION (P + N N +

1N3182

Abstract: 1N3946 1N4598 T-Cl-19 1N3555 1N4788A 1N4794 1N5470A 1N3552 1N951
Contextual Info: 17 7 5 4 7 0 C O D I SEMICONDUCTOR INC TD 9 0 D 00581 D D eT J 1 7 7 5 4 7 0 QODDSfll 3 |~~ “TX li Ü CODI Semiconductor,3 Inc. iE°EC"lGISTERED VO LTAG E V A R IA B L E JEDEC REGISTERED VOLTAGE VARIABLE CAPACITOR c a p a c it o r s SPECIFICATION LIST TYPE

Contextual Info: K n o x S e m ic o n d u c t o r , I n c GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE NUMBER CAPACITANCE @ - 4 Vdc CAPACITANCE RANGE 0.1 V dctoM W V QUALITY FACTOR Q @ - 4 Vdc, f = 50 MHz MIN TYP REVERSE VOLTAGE @ 100 mA MAX WORKING VOLTAGE 130

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE N U M BER CAPA C ITA N C E @ - 4 Vdc CA PACITANCE RANGE 0.1 V d c to M W V QUALITY FACTOR Q @ - 4 Vdc, f = 50 M H z MIN TYP REVERSE VOLTAGE @ 100 nA MAX W ORKING

diode 1N951

Abstract: teledyne crystalonics 1N3628
Contextual Info: VARACTOR SELECTO R GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current <10nA low Cost Comments <1.0M* R e p lace s M V 8 3 0 -M V 8 4 0 D O -7 G la s s CV830C V 840 X CV1006-16CV1106-16 X X CV1620CV1650

Contextual Info: 1N52831N5314 L 1N950 m 1N956 Ï i Current Regulator and Varactor Tuning Diodes CURRENT REGULATOR FIELD EFFECT DIODES Nom A A A A A A A A A A A A 1N5283 1N5284 1N5285 1N5286 1N5287 1N5288 1N5289 1N5290 1N5291 1N5292 1N5293 1N5294 A A A A A A A A A A A A A 1N5295

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

IN733A

Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
Contextual Info: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano

1N951

Abstract: VC606 VC608 VC611 VC613 VC616 VC619 VC623 VC634 VC641
Contextual Info: 3074474 EASTRON 3074474 ODOOIOI 0 | CORP Q o 100 Capacity @4Vdc Pf Minimum Saturation Voltage Minimum O é>4V, 50mc VC406 VC409 VC414 VC421 VC432 VC446 VC467 7 10 15 22 33 47 68 30 30 30 30 30 30 30 100 100 100 100 100 100 100 VC407 VC410 VC415 VC422 VC433

Contextual Info: 1N950 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . thru 1N956B VOLTAGE VARIABLE CAPACITORS General Purpose Applications ELECTRICAL CHARACTERISTICS i CHARACTERISTICS - 1 at Ta = 25 °C unless otherwise specified TEST CONDITIONS Min. Typ. Max.

VC616

Abstract: VC606 VC608 VC611 VC613 VC619 VC623 VC628 VC634 VC641
Contextual Info: 3074474 EASTRON CORP Sb DE I 3 0 7 4 4 7 4 DD0D101 oT&T-IJ Qo Capacity @4Vdc Pf Minimum Saturation V oltage VC406 VC409 VC414 VC421 VC432 VC446 VC467 7 10 15 22 33 47 68 30 30 30 30 30 30 30 100 100 100 100 100 100 100 VC407 VC410 VC415 VC422 VC433 VC447

70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Contextual Info: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any