Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE NUMBER 1N950 1N951 1N952 1N953 1N954 1N955 1N956 CAPACITANCE @ - 4 Vdc 35 50 70 100 35 50 70 Package Style DC Power Dissipation Operating Temperature Topr

"Varactor Diodes"

Abstract: 1N951 1N953 1N956 Knox Semiconductor 1N950 1N952 1N954 1N955
Contextual Info: KNOX SEMICONDUCTOR, INC. GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE NUMBER 1N950 1N951 1N952 1N953 1N954 1N955 1N956 CAPACITANCE @ - 4 Vdc 35 50 70 100 35 50 70 Package Style DC Power Dissipation Operating Temperature Topr Storage Temperature (Tstg)

1N5283

Abstract: 1N5284 1N5285 1N5286 1N5287 1N5288 1N5289 1N5290 1N5291 1N5292
Contextual Info: ^ KNOX SEMICONDUCTOR INC D E | S5BöS34 000D135 h | > K - 2- Current Regulator and Varactor Tuning Diodes CURRENT REGULATOR FIELD EFFECT DIODES Nom Norn Regulator Current Ip mA @ Vt = 25V Min Max 0.22 0.22 0.27 0.30 0.33 0.39 0.43 0.47 0.56 0.62 0.68 0.75

1N3627

Abstract: IN951 1N950 1N951 1N952 1N953 1N954 1N955 1N956 V100G
Contextual Info: TE L •DYNE COMPONENTS EâE D f i T1 7b a e T -o 7 - J QQQbL.47 1 GENERAL P U R P O SE 1N950-956 S IL IC O N E P IT A X IA L V A R A C T R O N V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S V20G-100G GEOMETRY 415 • ALL EPITAXIAL CONSTRUCTION (P + N N +

Contextual Info: K n o x S e m ic o n d u c t o r , I n c GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE NUMBER CAPACITANCE @ - 4 Vdc CAPACITANCE RANGE 0.1 V dctoM W V QUALITY FACTOR Q @ - 4 Vdc, f = 50 MHz MIN TYP REVERSE VOLTAGE @ 100 mA MAX WORKING VOLTAGE 130

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE N U M BER CAPA C ITA N C E @ - 4 Vdc CA PACITANCE RANGE 0.1 V d c to M W V QUALITY FACTOR Q @ - 4 Vdc, f = 50 M H z MIN TYP REVERSE VOLTAGE @ 100 nA MAX W ORKING

diode 1N951

Abstract: teledyne crystalonics 1N3628
Contextual Info: VARACTOR SELECTO R GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current <10nA low Cost Comments <1.0M* R e p lace s M V 8 3 0 -M V 8 4 0 D O -7 G la s s CV830C V 840 X CV1006-16CV1106-16 X X CV1620CV1650

Contextual Info: 1N52831N5314 L 1N950 m 1N956 Ï i Current Regulator and Varactor Tuning Diodes CURRENT REGULATOR FIELD EFFECT DIODES Nom A A A A A A A A A A A A 1N5283 1N5284 1N5285 1N5286 1N5287 1N5288 1N5289 1N5290 1N5291 1N5292 1N5293 1N5294 A A A A A A A A A A A A A 1N5295

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

IN733A

Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
Contextual Info: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano

2u20 diode

Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
Contextual Info: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors

IN5440

Abstract: OA97 OA83 OA95 diode in4796 OA77 1N5448 OA97 diode 1N4794 OA41
Contextual Info: VARACTOR TUNING DIODES JE D Ë C Product Highlights Minimum Figure Capacitance Maximum iigRSSSiiiSsig:;: of Merit C a paci ta n ce Breakdown at 4 0 V Ratio Working at VR=4 0 V atJ„ 1Q uft and f=1 0 MHz and 50 MHz 2 0 V to V, * V Voltage N u mber <PF Minimum

Contextual Info: 1N950 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . thru 1N956B VOLTAGE VARIABLE CAPACITORS General Purpose Applications ELECTRICAL CHARACTERISTICS i CHARACTERISTICS - 1 at Ta = 25 °C unless otherwise specified TEST CONDITIONS Min. Typ. Max.