ZTX601
Abstract: No abstract text available
Text: ZTX600 Not Recommended for New Design Please Use ZTX601 ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K
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ZTX600
ZTX601
ZTX601
ZTX600
100ms
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ZTX601
Abstract: ZTX600 DSA003770
Text: ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V*
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ZTX600
ZTX601
100ms
ZTX601
ZTX600
DSA003770
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ztx601
Abstract: No abstract text available
Text: ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V*
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ZTX600
ZTX601
100ms
ztx601
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52001HR
Abstract: IN3064 1K x 4 static ram ttl
Text: 52001 H 1K BIT 128 x 8 NVRAM Q 1K Bit Static RAM backed by 1K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit EEPROM Changes SRAM Cycle Time less than 300 ns Power-Failure Protection Unlimited Recall Cycles Memory Margining Capability
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52212HR
Abstract: IN3064 256X4 ncr 400 256x4 static ram
Text: C 52212 R 1K BIT 2 5 6 x 4 NVRAM 1K Bit Static RAM backed by 1K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit E2PROM Changes SRAM Cycle Time less than 300 ns • • • • Power-Failure Protection Unlimited Recall Cycles
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256x4)
52212HR
IN3064
256X4
ncr 400
256x4 static ram
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PCN0109
Abstract: EP1K100 1K transistor
Text: PROCESS CHANGE NOTIFICATION ACEX 1K DEVICE PROCESS IMPROVEMENT Altera & TSMC have jointly developed a more efficient process for the ACEX 1K products. The metallization layers on Altera’s ACEX 1K devices will be reduced in dimensions so as to accomplish an overall reduction in die size. Since all other key
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EP1K100.
EP1K100
EP1K100
XDZ83YYWWT
PCN0109
PCN0109
1K transistor
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MMBT6428
Abstract: mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088
Text: Surface Mount Low Noise Transistors Part No., Marking Code and Polarity NPN hFE NF Max. Condition Frequency PNP dB MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 1K 1K 1L 1U 1U 1Q 1Q 1R 1R MMBT5086 KST5086 MMBT5087 TMPT5087
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MMBT6428
KST6428
MMBT6429
MMBT2484
KST2484
MMBT5088
KST5088
MMBT5089
KST5089
MMBT5086
MMBT6428
mmbth10
KST2484
KST5086
KST5088
KST5089
KST6428
MMBT2484
MMBT5086
MMBT5088
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Untitled
Abstract: No abstract text available
Text: CEJ8218 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D 20V, 6.5A, RDS ON = 23mΩ @VGS = 4.5V. D RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). G1 *1K *1K G2 High power and current handing capability.
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CEJ8218
2928-8J
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Untitled
Abstract: No abstract text available
Text: CEC8218 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D 20V, 6.5A, RDS ON = 23mΩ @VGS = 4.5V. D RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). G1 *1K *1K G2 High power and current handing capability.
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CEC8218
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RTGN131AP
Abstract: 4503 rtgn131
Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN131AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN131AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=1kΩ,R2=1kΩ） ● High collector current IC=1A
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RTGN131AP
RTGN131AP
4503
rtgn131
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Nov-27-1996
Abstract: No abstract text available
Text: BCR 571 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ Type Marking Ordering Code Pin Configuration BCR 571 XXs 1=B UPON INQUIRY Package 2=E 3=C SOT-23 Maximum Ratings
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OT-23
Nov-27-1996
Nov-27-1996
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CEG8208
Abstract: AIDM-25 S127
Text: CEG8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D 20V, 6.5A, RDS ON = 22mΩ @VGS = 4.5V. D RDS(ON) = 32mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). *1K G1 G2 *1K High power and current handing capability.
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CEG8208
CEG8208
AIDM-25
S127
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Q62702-C2355
Abstract: No abstract text available
Text: BCR 521 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ Type Marking Ordering Code Pin Configuration BCR 521 XVs 1=B Q62702-C2355 Package 2=E 3=C SOT-23 Maximum Ratings
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Q62702-C2355
OT-23
Nov-27-1996
Q62702-C2355
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Untitled
Abstract: No abstract text available
Text: ET1257 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N No V(BR)CEO (V)1k V(BR)CBO (V)1k I(C) Max. (A)200 Absolute Max. Power Diss. (W)1.5k Maximum Operating Temp (øC) h(FE) Min. Current gain.4 @I(C) (A) (Test Condition)120
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ET1257
NumberTR00300002
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but16
Abstract: MJ4247 MJ12005 2N3792 MOTOROLA 2N3442 MJ423 BDX66 MOTOROLA MJ16028 BDX65B motorola MJ10006
Text: POWER TRANSISTORS — BIPOLAR METAL continued T0-204AA (FORMERLY TO-3) (continued) Resistive Switching lcCont Amps Max 8 VcEO (sus) Volts Min Device Type NPN PNP fr MH? Amp Max Max Amp Min (al 25°C Watts MJ900 BDX62 1k min 1k min 3 3 90 90 80 MJ1001 BDX63A
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MJ1000
BDX63
MJ900
BDX62
MJ1001
BDX63A
MJ901
BDX62A
BDX63B
BDX62B
but16
MJ4247
MJ12005
2N3792 MOTOROLA
2N3442
MJ423
BDX66 MOTOROLA
MJ16028
BDX65B motorola
MJ10006
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BCR571
Abstract: No abstract text available
Text: BCR571 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR571 XXs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR571
VPS05161
EHA07183
Jul-23-2001
BCR571
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BCR521
Abstract: No abstract text available
Text: BCR521 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR521
VPS05161
EHA07184
Jun-29-2001
BCR521
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Untitled
Abstract: No abstract text available
Text: BCR 521 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 521 XVs Pin Configuration 1=B 2=E Package 3=C
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VPS05161
EHA07184
OT-23
Oct-19-1999
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Untitled
Abstract: No abstract text available
Text: BCR521 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR521
VPS05161
EHA07184
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BCR521
Abstract: No abstract text available
Text: BCR521 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR521
VPS05161
EHA07184
Dec-13-2001
BCR521
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BCR571
Abstract: No abstract text available
Text: BCR571 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR571 XXs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR571
VPS05161
EHA07183
Dec-13-2001
BCR571
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Untitled
Abstract: No abstract text available
Text: BCR521 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR521
VPS05161
EHA07184
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IC 571
Abstract: transistor d 571
Text: BCR 571 PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 571 XXs Pin Configuration 1=B 2=E Package 3=C
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VPS05161
EHA07183
OT-23
Oct-19-1999
IC 571
transistor d 571
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Untitled
Abstract: No abstract text available
Text: 8 BIT SINGLE CHIP MICROCONTROLLER LC875532A/24A/16A Preliminary LC875532A 8-Bit Single Chip Microcontroller incorporating 32K-byte ROM and 1K-byte RAM on chip. LC875524A 8-Bit Single Chip Microcontroller incorporating 24K-byte ROM and 1K-byte RAM on chip.
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LC875532A
LC875532A/24A/16A
32K-byte
LC875524A
24K-byte
LC875516A
16K-byte
LC875532A,
LC875524A,
LC875516A
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