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    1K TRANSISTOR Search Results

    1K TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1K TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZTX601

    Abstract: No abstract text available
    Text: ZTX600 Not Recommended for New Design Please Use ZTX601 ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K


    Original     		PDF ZTX600 ZTX601 ZTX601 ZTX600 100ms

    ZTX601

    Abstract: ZTX600 DSA003770
    Text: ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V*


    Original     		PDF ZTX600 ZTX601 100ms ZTX601 ZTX600 DSA003770

    ztx601

    Abstract: No abstract text available
    Text: ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V*


    Original     		PDF ZTX600 ZTX601 100ms ztx601

    PCN0109

    Abstract: EP1K100 1K transistor
    Text: PROCESS CHANGE NOTIFICATION ACEX 1K DEVICE PROCESS IMPROVEMENT Altera & TSMC have jointly developed a more efficient process for the ACEX 1K products. The metallization layers on Altera’s ACEX 1K devices will be reduced in dimensions so as to accomplish an overall reduction in die size. Since all other key


    Original     		PDF EP1K100. EP1K100 EP1K100 XDZ83YYWWT PCN0109 PCN0109 1K transistor

    MMBT6428

    Abstract: mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088
    Text: Surface Mount Low Noise Transistors Part No., Marking Code and Polarity NPN hFE NF Max. Condition Frequency PNP dB MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 1K 1K 1L 1U 1U 1Q 1Q 1R 1R MMBT5086 KST5086 MMBT5087 TMPT5087


    Original     		PDF MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 MMBT5086 MMBT6428 mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088

    Untitled

    Abstract: No abstract text available
    Text: CEJ8218 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D 20V, 6.5A, RDS ON = 23mΩ @VGS = 4.5V. D RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). G1 *1K *1K G2 High power and current handing capability.


    Original     		PDF CEJ8218 2928-8J

    Untitled

    Abstract: No abstract text available
    Text: CEC8218 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D 20V, 6.5A, RDS ON = 23mΩ @VGS = 4.5V. D RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). G1 *1K *1K G2 High power and current handing capability.


    Original     		PDF CEC8218

    RTGN131AP

    Abstract: 4503 rtgn131
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN131AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN131AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=1kΩ,R2=1kΩ） ● High collector current IC=1A


    Original     		PDF RTGN131AP RTGN131AP 4503 rtgn131

    Nov-27-1996

    Abstract: No abstract text available
    Text: BCR 571 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ Type Marking Ordering Code Pin Configuration BCR 571 XXs 1=B UPON INQUIRY Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		PDF OT-23 Nov-27-1996 Nov-27-1996

    CEG8208

    Abstract: AIDM-25 S127
    Text: CEG8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D 20V, 6.5A, RDS ON = 22mΩ @VGS = 4.5V. D RDS(ON) = 32mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). *1K G1 G2 *1K High power and current handing capability.


    Original     		PDF CEG8208 CEG8208 AIDM-25 S127

    Q62702-C2355

    Abstract: No abstract text available
    Text: BCR 521 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ Type Marking Ordering Code Pin Configuration BCR 521 XVs 1=B Q62702-C2355 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		PDF Q62702-C2355 OT-23 Nov-27-1996 Q62702-C2355

    Untitled

    Abstract: No abstract text available
    Text: ET1257 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N No V(BR)CEO (V)1k V(BR)CBO (V)1k I(C) Max. (A)200 Absolute Max. Power Diss. (W)1.5k Maximum Operating Temp (øC) h(FE) Min. Current gain.4 @I(C) (A) (Test Condition)120


    Original     		PDF ET1257 NumberTR00300002

    Untitled

    Abstract: No abstract text available
    Text: BCR521 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 1kΩ, R2= 1kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR521 Marking XVs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings


    Original     		PDF BCR521 EHA07184

    BCR571

    Abstract: No abstract text available
    Text: BCR571 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR571 XXs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings


    Original     		PDF BCR571 VPS05161 EHA07183 Jul-23-2001 BCR571

    Untitled

    Abstract: No abstract text available
    Text: BCR 521 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 521 XVs Pin Configuration 1=B 2=E Package 3=C


    Original     		PDF VPS05161 EHA07184 OT-23 Oct-19-1999

    Untitled

    Abstract: No abstract text available
    Text: BCR521 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings


    Original     		PDF BCR521 VPS05161 EHA07184

    BCR521

    Abstract: No abstract text available
    Text: BCR521 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings


    Original     		PDF BCR521 VPS05161 EHA07184 Dec-13-2001 BCR521

    BCR571

    Abstract: No abstract text available
    Text: BCR571 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR571 XXs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings


    Original     		PDF BCR571 VPS05161 EHA07183 Dec-13-2001 BCR571

    Untitled

    Abstract: No abstract text available
    Text: BCR521 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings


    Original     		PDF BCR521 VPS05161 EHA07184

    IC 571

    Abstract: transistor d 571
    Text: BCR 571 PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 571 XXs Pin Configuration 1=B 2=E Package 3=C


    Original     		PDF VPS05161 EHA07183 OT-23 Oct-19-1999 IC 571 transistor d 571

    Untitled

    Abstract: No abstract text available
    Text: 8 BIT SINGLE CHIP MICROCONTROLLER LC875532A/24A/16A Preliminary LC875532A 8-Bit Single Chip Microcontroller incorporating 32K-byte ROM and 1K-byte RAM on chip. LC875524A 8-Bit Single Chip Microcontroller incorporating 24K-byte ROM and 1K-byte RAM on chip.


    Original     		PDF LC875532A LC875532A/24A/16A 32K-byte LC875524A 24K-byte LC875516A 16K-byte LC875532A, LC875524A, LC875516A

    52001HR

    Abstract: IN3064 1K x 4 static ram ttl
    Text: 52001 H 1K BIT 128 x 8 NVRAM Q 1K Bit Static RAM backed by 1K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit EEPROM Changes SRAM Cycle Time less than 300 ns Power-Failure Protection Unlimited Recall Cycles Memory Margining Capability


    OCR Scan     		PDF

    52212HR

    Abstract: IN3064 256X4 ncr 400 256x4 static ram
    Text: C 52212 R 1K BIT 2 5 6 x 4 NVRAM 1K Bit Static RAM backed by 1K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit E2PROM Changes SRAM Cycle Time less than 300 ns • • • • Power-Failure Protection Unlimited Recall Cycles


    OCR Scan     		PDF 256x4) 52212HR IN3064 256X4 ncr 400 256x4 static ram

    but16

    Abstract: MJ4247 MJ12005 2N3792 MOTOROLA 2N3442 MJ423 BDX66 MOTOROLA MJ16028 BDX65B motorola MJ10006
    Text: POWER TRANSISTORS — BIPOLAR METAL continued T0-204AA (FORMERLY TO-3) (continued) Resistive Switching lcCont Amps Max 8 VcEO (sus) Volts Min Device Type NPN PNP fr MH? Amp Max Max Amp Min (al 25°C Watts MJ900 BDX62 1k min 1k min 3 3 90 90 80 MJ1001 BDX63A


    OCR Scan     		PDF MJ1000 BDX63 MJ900 BDX62 MJ1001 BDX63A MJ901 BDX62A BDX63B BDX62B but16 MJ4247 MJ12005 2N3792 MOTOROLA 2N3442 MJ423 BDX66 MOTOROLA MJ16028 BDX65B motorola MJ10006