2 F TRANSISTOR Search Results

2 F TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

2 F TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D0217 Abstract: IRFP 620 IRF622 application FZJ 111 irf 44 n FZJ 101 transistor irf620 pj62 IRF620 IRF621 Text: 3GE » • 7^23? 002=1703 1 ■ ' T v3P\|- [ S G S -T H O M S O N * 7 # [ * œ Œ ( g r a [ i * § r= IR F 6 2 0 / F I - 6 2 1 /F I IR F 6 2 2 / F I - 6 2 3 /F I Z S G S-thomJoF TYPE N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS 200 V 200 V ^DS(on	OCR Scan	620/FI-621/FI 622/FI-623/FI IRF620 IRF620FI IRF621 IRF621FI IRF622 IRF622FI IRF623 IRF623FI D0217 IRFP 620 IRF622 application FZJ 111 irf 44 n FZJ 101 transistor irf620 pj62	PDF
Semikron SKR 21 Abstract: semikron skn 50/04 semikron skr 50/08 SKN 21 semikron skn 50/04 SKR 50 diode skn 21 diode skn 50/10 Semikron SKR 40 /12 Text: VRSM VRRM IFRMS maximum values for continuous operation 100 A Fast Recovery Rectifier Diodes IFAV (sin. 180; Tcase = . . . ) 50 A (105 °C) 50 A (95 °C) SKN 2 F 50 SKR 2 F 50 trr = 200 ns V 400 SKN 2 F 50/04 SKN 2 F 50/04 UNF SKR 2 F 50/04 SKR 2 F 50/04 UNF	Original	180/rec Semikron SKR 21 semikron skn 50/04 semikron skr 50/08 SKN 21 semikron skn 50/04 SKR 50 diode skn 21 diode skn 50/10 Semikron SKR 40 /12	PDF
Untitled Abstract: No abstract text available Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : \|S2l e\|2 = 9-0dB (f=2GHz)	OCR Scan	HN3C17FU 16GHz	PDF
2sc5463 Abstract: No abstract text available Text: T O SH IB A 2SC5463 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 54 63 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F = l.ld B , \|S 2 ie l 2 = 12dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SC5463 2sc5463	PDF
TRANSISTOR si 6822 Abstract: SI 6822 PA2981C uPA2981 transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR UPA2982 TRANSISTOR NPN 6822 Text: M 'ê ' h =7 C o m p o u n d Transistor MP x t° ^ M > ' □ > h ^ ^ LED, A 2 9 8 1 , 2 9 8 2 ^ V 7 °, ^ T U"f «H— -T ¿¿PA2981, 2982ÌÌ, P N P , N PN F 7 y VsX i 7 t H B Î f f i i ' 1 4* Z>, Hiïl V - X f t i 8 ¡ M f à M f à r - >) > h > h 9 > P X ÿ T ^ 4 T to	OCR Scan	uPA2981 uPA2982 TRANSISTOR si 6822 SI 6822 PA2981C transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR TRANSISTOR NPN 6822	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA MT4S06U TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S06U VH F—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.6 dB VCE = 3 V, IC = 3 mA, f = 2 GHz High Gain : \|S2le\|2 = H-5 dB (VCE = 3V, IC = 7mA, f = 2 GHz)	OCR Scan	MT4S06U 961001EAA1	PDF
DUAL DIODE Abstract: g28 SOT23 FMMD7000 FMMD2836 FMMD6100 FMMD2838 BAW* diode FMMD2835 FMMD2837 5V6 DIODE Text: SOT-23 TRANSISTORS & DIODES SILICON ABRIJPT TUNER D ODES Type FM M V2101 F M M V 2 10 2 FM M V 2 1 0 3 FM M V 2 1 0 4 FM M V2105 FM M V 2 1 0 6 FM M V 2 1 07 FM M V 2 1 0 8 FM M V 2 1 0 9 max. Capacitance ratio f=1M Hz C 2/C 20 min. Q at V „ = 3V f = 50MHz	OCR Scan	OT-23 C2/C20 50MHz FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2105 FMMV2106 FMMV2107 DUAL DIODE g28 SOT23 FMMD7000 FMMD2836 FMMD6100 FMMD2838 BAW* diode FMMD2835 FMMD2837 5V6 DIODE	PDF
2sc5464 Abstract: No abstract text available Text: T O SH IB A 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , \|S 2 ie l 2 = 12dB f= lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SC5464 2sc5464	PDF
Untitled Abstract: No abstract text available Text: MTD2005 • f ö M / Features • S fS f a • • IHKStSS • Constant-Current Chopping Function (Fixed Frequency) 2 Ì I A * ( 1 - 2 f f lM 8 [ ± E N A £ # f f l) • 2-Phase Input (H alf Step Drive Uses ENA Together) ■ i t S S ' E — K tjJ J iH f # !	OCR Scan	MTD2005	PDF
LT 7706 Abstract: LT 7207 Text: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, \|S 2 1 e\|2= 10dB f=2GHz -H M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SC5097 -j250 LT 7706 LT 7207	PDF
transistor BC148 Abstract: BC147 BC148 BC108* BC109* BC110* TRANSISTORS sim 300 w BC149 BC148 transistor BC158 AF379 BC157 Text: Inventory o f discrete standard Types 9.1. Transistors Type P = P N P (N = N P N ) C o lle c t o r base re v e rse v o lt a g e V<:b o ; V ( ' ' c e s ): V A F200U P -2 5 AF 201 U AF 202 P P -2 5 -2 5 A F 20 2S P -3 2 AF 239 P A F 23 9S A F 240 AF 279 C o lle c t o r	OCR Scan	AF200U AF202S AF239S T0-50 T0-50 OT-30 T0-18 BC108 BC109 transistor BC148 BC147 BC148 BC108* BC109* BC110* TRANSISTORS sim 300 w BC149 BC148 transistor BC158 AF379 BC157	PDF
Untitled Abstract: No abstract text available Text: MTD2006F • f ö M / Features • S fS f a • • IHKStSS • Constant-Current Chopping Function (Fixed Frequency) 2 Ì I A * ( 1 - 2 f f lM 8 [ ± E N A £ # f f l) • 2-Phase Input (H alf Step Drive Uses ENA Together) ■ i t S S ' E — K tjJ J iH f# ! ( y ’ - i •? P X ^ - y T ’lEKSifcrO	OCR Scan	MTD2006F U055-8) HSOP28	PDF
RH1034-1.2 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low noise • N F = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • N F = 1 .3 dB ty p	OCR Scan	2SC5182 SC-59 RH1034-1.2	PDF
UFNF430 Abstract: diode ed 2437 UFNF432 Text: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.	OCR Scan	UFNF430 UFNF431 UFNF432 UFNF433 UFNF430 diode ed 2437 UFNF432	PDF

transistor marking 1p Z Abstract: No abstract text available Text: TOSHIBA 2SC5098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5098 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • U nit in mm 2.1 ± 0.1 Low Noise Figure, High Gain. • . 1.25 ±0.1 N F = 1.8dB, \|S 2 1 e\|2 = 10dB f=2G Hz n 4 M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SC5098 transistor marking 1p Z	PDF
rank 502 fp Abstract: 2SC4863 Text: Ordering n u m b e r:E N 4 5 8 2 _ 2SC4863 N o.4582 N PN Epitaxial Planar Silicon Transistor I VHF to UHF Wide-Band Low-Noise Amp Applications F e a tu r e s •Low noise : N F = l.ld B typ f= 1GHz • H igh ga in : I S21e I 2= lld B typ (f= 1GHz)	OCR Scan	EN4582 2SC4863 rank 502 fp	PDF
Untitled Abstract: No abstract text available Text: MT3S35FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S35FS VCO Oscillator Stage UHF Low-Noise Amplifier Application • Low Noise Figure: NF = 1.4 dB @ f = 2 GHz • High Gain: \|S21e\|2 = 13.0 dB (@ f = 2 GHz) 0.6±0.05 1.0±0.05 0.2±0.05 Features	Original	MT3S35FS	PDF
hfe 4538 Abstract: IC 7448 IC 7432 pin configuration ic 7448 UPA827TF ic LC 7815 pin configuration of ic 7448 pin configuration NPN transistor 9013 npn pin configuration of 7496 IC C 4804 transistor Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: \|S21E\|2 = 9 dB TYP at f = 2 GHz, VCE = 2 V, lc = 7 mA Package Outline TS06 (Top View) 2.1 ± 0.1 \|S21E\|2 = 8.5 dB TYP at f = 2 GHz, VCE = 1 V, lc = 5 mA	Original	UPA827TF NE686 UPA827TF UPA827TF-T1 24-Hour hfe 4538 IC 7448 IC 7432 pin configuration ic 7448 ic LC 7815 pin configuration of ic 7448 pin configuration NPN transistor 9013 npn pin configuration of 7496 IC C 4804 transistor	PDF
NE686 Abstract: NE698M01 NE698M01-T1 S21E 8 pin ic 5916 ic 4072 transistor s11 s12 s21 s22 TRANSISTOR K 2191 8427 transistor Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE698M01 OUTLINE DIMENSIONS Units in mm HIGH fT: 17 GHz TYP at 2 V, 7 mA • LOW NOISE FIGURE: NF = 1.1 dB TYP at f = 2 GHz, 2 V, 1 mA • HIGH GAIN: \|S21E\|2 = 15.5 dB TYP at f = 2 GHz	Original	NE698M01 NE698M01 NE686) OT363 24-Hour NE686 NE698M01-T1 S21E 8 pin ic 5916 ic 4072 transistor s11 s12 s21 s22 TRANSISTOR K 2191 8427 transistor	PDF
2SD1918F5 Abstract: 2SD2211 2SD1918 FRI02 2SB1275 T100 Z100 k50z Text: 2SD2211/2SD1918F5 h 7 > v 7>£ /Transistors 2 S D 2 2 1 1 Z 5 D 1 yV3 > Epitaxial Planar NPN Silicon Transistor i£JiilàjÆ ^ i£fiffl/L o w Freq. Power Amp. I f c f * * '> 7 ^ 7 l/- * fê N P N o c e O r O • i'HIN'& ISI/Dim ensions Unit : mm • 45*	OCR Scan	2SD2211 /2SD1918F5 2SD1918F5 2SB1275 2SB1275. SC-63 SC-62 2SD1918 FRI02 2SB1275 T100 Z100 k50z	PDF
IC 7448 Abstract: pin configuration of 7496 IC UPA827TF pin configuration ic 7448 pin configuration NPN transistor 9013 npn NE686 S21E UPA827TF-T1-A 8 pin ic 3842 NEC 14324 Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • UPA827TF OUTLINE DIMENSIONS Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: \|S21E\|2 = 9 dB TYP at f = 2 GHz, VCE = 2 V, lc = 7 mA Package Outline TS06 (Top View) 2.1 ± 0.1 \|S21E\|2 = 8.5 dB TYP at f = 2 GHz, VCE = 1 V, lc = 5 mA	Original	UPA827TF NE686 UPA827TF UPA827TF-T1-A IC 7448 pin configuration of 7496 IC pin configuration ic 7448 pin configuration NPN transistor 9013 npn S21E UPA827TF-T1-A 8 pin ic 3842 NEC 14324	PDF
Untitled Abstract: No abstract text available Text: R F L 1N 18 R F L 1N 2 0 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistors \ugust 1991 Features Pa cka ge T O -2 0 5 A F BO TTO M VIEW • 1A, 180V and 200V • ros on = 3.65ft • SO A is Power-Dissipation Limited • Nanosecond Switching Speeds	OCR Scan	AN-7260.	PDF
ic 731 1624 Abstract: 2SC5184 transistors ON 4673 Text: DATA SHEET SILICON TRANSISTOR µPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz 2.1±0.1 NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	PA808T PA808T-T1 ic 731 1624 2SC5184 transistors ON 4673	PDF
transistor 3506 nec Abstract: 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter Text: DATA SHEET SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	2SC5185 transistor 3506 nec 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter	PDF

2 F TRANSISTOR Search Results

2 F TRANSISTOR Result Highlights (5)

2 F TRANSISTOR Datasheets Context Search

D0217

Semikron SKR 21

Untitled

2sc5463

TRANSISTOR si 6822

Untitled

DUAL DIODE

2sc5464

Untitled

LT 7706

transistor BC148

Untitled

RH1034-1.2

UFNF430

transistor marking 1p Z

rank 502 fp

Untitled

hfe 4538

NE686

2SD1918F5

IC 7448

Untitled

ic 731 1624

transistor 3506 nec