sp8k10s
Abstract: SP8K10 rsd220n06 RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 rss065n06 R6010ANX
Text: 2009 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.
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R0039A
51P6023E
sp8k10s
SP8K10
rsd220n06
RRS100P03
RTR011P02
SP8M41
RRS075P03
RRR035N03
rss065n06
R6010ANX
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RSD130P10
Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
Text: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.
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5V/60V
R0039A
52P6214E
RSD130P10
RDR005N25
RCD040N25
rsd220n06
RSY200N05
RSD050N10
RCX100N25
R5207AND
RP1E090
rsy200
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RSD130P10
Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨܼׅDŽ 01 MOSFET Contents
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RUM002N02
RZM002P02
RUE002N02
RZE002P02
RUM002N05
RUE002N05
RZF013P01
RZL025P01
RZR020P01
RW1A013ZP
RSD130P10
rsd220n06
RDR005N25
RP1E090
RSD130P
R6015
RCD040N25
rcd080n25
RSD050N10
R5207AND
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on line ups circuit diagrams
Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm
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EP51E
CPH6605
MCH6613
ECH8609
CPH3424
CPH3427
K3614
FW343
FW356
FW360
on line ups circuit diagrams
2SK3850
242M
SSFP package
K3492
3ln03
MCH3435
CPH5612
three phase on line ups circuit diagrams
TN6R04
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RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
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R07CS0003EJ0100
RJP63k2
rjp63f3
rjp30e2
RJP30H2
RJJ0319DSP
rjp63f
RJP30H3
rjj0319
BCR1AM-12A equivalent
RJJ0606
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Transistor Mosfet N-Ch 30V
Abstract: STS8C5H30L S8C5H30L P-CHANNEL
Text: STS8C5H30L N-CHANNEL 30V - 0.018Ω - 8A SO-8 P-CHANNEL 30V - 0.045Ω - 5A SO-8 LOW GATE CHARGE StripFET III MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STS8C5H30L (N-Channel) STS8C5H30L (P-Channel) 30 V 30 V < 0.022 Ω < 0.055 Ω
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STS8C5H30L
Transistor Mosfet N-Ch 30V
STS8C5H30L
S8C5H30L
P-CHANNEL
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RJJ0319DSP
Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?
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R07CS0003EJ0200
RJJ0319DSP
BCR8PM equivalent
RJP30H2
N0201
rjj0319
NP109N055PUJ
rjk5020
RJP30E2DPP
NP75N04YUG
lg washing machine circuit diagram
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Si3586DV
Abstract: No abstract text available
Text: SPICE Device Model Si3586DV Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3586DV
S-50836Rev.
16-May-05
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SiA513DJ
Abstract: No abstract text available
Text: SPICE Device Model SiA513DJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiA513DJ
S-71469Rev.
16-Jul-07
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STS7C4F30L
Abstract: P Channel STripFET Transistor Mosfet N-Ch 30V STSC4F30L
Text: STS7C4F30L N-CHANNEL 30V - 0.018Ω - 7A SO-8 P-CHANNEL 30V - 0.018Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STSC4F30L(N-Channel) STSC4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.060 Ω 70 A 70 A TYPICAL RDS(on) (N-Channel) = 0.018 Ω
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STS7C4F30L
STSC4F30L
STS7C4F30L
P Channel STripFET
Transistor Mosfet N-Ch 30V
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74130
Abstract: data sheet 74130 455 ch p 78 Si5517DU
Text: SPICE Device Model Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5517DU
S-52018Rev.
03-Oct-05
74130
data sheet 74130
455 ch
p 78
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Si4500DY
Abstract: No abstract text available
Text: SPICE Device Model Si4500DY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4500DY
02-May-01
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EIA-541
Abstract: IRF7101 IRF7307PBF
Text: PD - 95179 IRF7307PbF Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 N-CHANNEL MOSFET 1 8
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IRF7307PbF
EIA-481
EIA-541.
EIA-541
IRF7101
IRF7307PBF
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IRF P CHANNEL MOSFET
Abstract: MOSFET 150 N IRF N-P Channel mosfet
Text: PD - 96106 IRF7307QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET
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IRF7307QPbF
EIA-481
EIA-541.
IRF P CHANNEL MOSFET
MOSFET 150 N IRF
N-P Channel mosfet
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Transistor Mosfet N-Ch 30V
Abstract: STS7C4F30L
Text: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω
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STS7C4F30L
STS7C4F30L
Transistor Mosfet N-Ch 30V
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Si5504BDC
Abstract: No abstract text available
Text: SPICE Device Model Si5504BDC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5504BDC
S-71047Rev.
21-May-07
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004I
SC-43)
2SC1815
GT30J124
smd transistor h2a
gt45f122
TPCP8R01
GT30F123
2sc1815 smd type
smd marking 8L01
h2a smd
2SC5471
2sc5200 amplifiers circuit diagram
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toshiba laptop charging CIRCUIT diagram
Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5
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BCE0082H
toshiba laptop charging CIRCUIT diagram
TPC8123
TPH1400ANH
TPCA8047-H
TPC 8127
TPC8123 cross reference
SSM3J328R
SSM3J334R
TPC8120
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA533EDJ Vishay Siliconix N-Channel and P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized
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SiA533EDJ
18-Jul-08
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rjk5020
Abstract: HAT2195WP pfcpwm H8N0801AB HA16167 rjk0305dpb hat2165h RJK065 RJK5020DPK RJK0456D HA16174
Text: April 2010 Renesas Electronics High-speed and Low Ron Series Power MOSFETs for Synchronous Rectification of AC/DC Converter Features Low ON resistance Low input capacitance Low Qg High avalanche destruction tolerance High diode destruction tolerance Application Equipment
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HA16174
HA16158
HA16341
HA16342
HA16167
rjk5020
HAT2195WP
pfcpwm
H8N0801AB
HA16167
rjk0305dpb hat2165h
RJK065
RJK5020DPK
RJK0456D
HA16174
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STS7C4F30L
Abstract: P Channel STripFET Transistor Mosfet N-Ch 30V
Text: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω
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STS7C4F30L
STS7C4F30L
P Channel STripFET
Transistor Mosfet N-Ch 30V
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si4532cdy
Abstract: No abstract text available
Text: SPICE Device Model Si4532CDY Vishay Siliconix N-Channel and P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized over
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Si4532CDY
18-Jul-08
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rds035
Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
Text: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW
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RHU002N06
2SD2167
56to270
2SB1132
2SD1664
82to390
2SB1188
2SD1766
2SB1182
2SD1758
rds035
rds035l03
MMST8598
fet MK10
SM6K2
2SK3065
RHU002N06
RK7002 equivalent
bc847bc
2sd198
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SiA519EDJ
Abstract: No abstract text available
Text: SPICE Device Model SiA519EDJ Vishay Siliconix N-Channel and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized
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SiA519EDJ
18-Jul-08
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