20N60B
Abstract: s9011
Text: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient
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20N60B
O-24s
20N60B
s9011
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20n60B
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20
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20N60B
O-220AB
O-263
20n60B
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20N60 datasheet
Abstract: 20N60 20n60 G 20N60 to220 20N60B IGBT 20N60
Text: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings
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20N60
20N60B
O-220
20N60B
IXDP20N06B
20N60 datasheet
20n60 G
20N60 to220
IGBT 20N60
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Untitled
Abstract: No abstract text available
Text: High Voltage IGBT with optional Diode IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Speed, Low Saturation Voltage C G Preliminary Data G G C E E E IXDP 20N60B D1 Symbol Conditions VCES TJ = 25°C to 150°C TO-220 AB C G = Gate,
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20N60
20N60B
O-220
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20N60 to220
Abstract: 20N60B 20n60 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1
Text: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings
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20N60
20N60B
O-220
20N60B
IXDP20N06B
20N60 to220
igbt 20n60
20n60 G
20n60 igbt
20N60 datasheet
iXDP 20N60 BD1
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PDF
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20n60b
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient
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20N60B
20N60B
O-268
O-247
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient
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20N60B
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20n60
Abstract: No abstract text available
Text: IXDP 20N60 B VCES = 600 V IXDP 20N60 BD1 IC25 = 32 A VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings
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20N60
20N60B
O-220
20N60B
IXDP20N06B
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20
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20N60B
O-220AB
O-263
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Untitled
Abstract: No abstract text available
Text: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600
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20N60B2D1
IC110
8-06B
405B2
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 20N60BU1 VCE sat typ 600 V 40 A 1.7 V t 100ns CES ^C25 P relim inary data Maximum Ratings Symbol Test Conditions VCES ^ = 25°C to 150°C 600 V VCGR T,J = 25°C to 150°C; RG t = 1 MQ 600 V V v GES Continuous ±20 V«„ T ransient
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20N60BU1
100ns
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: aixYS HiPerFAST IGBT IXGH 20N60B VCES ^C25 VCE sat typ t.fi = = = = 600 V 40 A 1.7 V 100 ns Prelim inary data Symbol Test Conditions VCES Tj Vcon Maximum Ratings 600 V T J, = 25°C to 150°C: Rrc = 1 MQ u t 600 V VGES Continuous ±20 V VGEM Transient ±30
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20N60B
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20N60B
Abstract: lc1512
Text: □ IXYS H H ifl JL æ* X HiPerFAST IGBT V CES IC25 V CE sat typ t IXGA 20N60B IXGP 20N60B 600 V 40 A 1.7 V 100 ns Preliminary data sheet Symbol Test C onditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£2 600
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20N60B
O-220)
O-220
O-263
lc1512
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DSEP 15-06A
Abstract: 20N60B2D1 IXSH20N60B2D1 IC ti 072
Text: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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20N60B2D1
IC110
DSEP 15-06A
20N60B2D1
IXSH20N60B2D1
IC ti 072
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20N60BD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE sat typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES
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20N60BD1
20N60BD1
O-268
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: □IXYS HiPerFAST IGBT with Diode V CES IXGT 20N60BD1 ^C25 V CE sat typ ^fi(typ) = 600 V 40 A = 1.7 V 100 ns ” Preliminary data sheet Maximum Ratings Symbol Test C onditions V CES T j = 25°C to 150°C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 600
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20N60BD1
O-247AD
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IXBH 40N160
Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1
Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □
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20N60B
35N60B
20N120A
20N120
30N120
75N120A
T0-220
9N140
9N160
IXBH 40N160
20N120D1
Insulated Gate Bipolar Transistors
55N120D1
20N120A
20N60BD1
9N140
ixbh9n160
30N120
35N60BD1
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT VCES IC25 VCE sat typ tfi IXGA 20N60B IXGP 20N60B = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20
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20N60B
20N60B
O-263
O-220
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PDF
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Untitled
Abstract: No abstract text available
Text: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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20N60B2D1
IC110
5-06A
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PDF
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20N60B2D1
Abstract: No abstract text available
Text: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600
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20N60B2D1
IC110
8-06B
405B2
20N60B2D1
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PDF
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ph-15 diode
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFAST IGBT with Diode IXGH IXGT 20N60BD1 20N60BD1 V CES ^C25 VCE sat typ t’fi(typ) Combi Pack Symbol Test Conditions Maximum Ratings T j = 25° C to 150" C 600 V Tj = 25' C to 150 C; RGf = 1 M li 600 V Continuous ±20
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20N60BD1
20N60BD1
O-268
O-247AD
ph-15 diode
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFAST IGBT IXGA 1XGP 20N60B 20N60B VCES IC25 VCE sat typ = 600 = 40 = 1.7 tf , = 100 ns V A V Preliminary data sheet Maximum Ratings V C ES T, = 25°C to 150°C 600 V V CGR Tj = 25“C to 150°C; RGE = 1 MQ 600 V V GES Continuous ±20 V v GEM Transient
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20N60B
20N60B
TQ-220AB
O-263
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PDF
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30N120D1
Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120
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O-268
35-06C
40-06D
OT-227B
50-12E
50-12BD
30N120D1
55N120D1
35N60BD1
30n120d
35N60B
transistor c90
40N120D1
20N120D1
60N120
20N60BD1
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PDF
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20N60BD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE sat typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES
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20N60BD1
O-268
20N60BD1
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