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IXYS Corporation


IXYS Corporation IXGX320N60B3 IGBT PT 600V 500A PLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGX320N60B3	Tube	285		1	1 $35.58 10 $35.58 100 $23.51933 1000 $23.38917 10000 $23.38917	Buy Now
Mouser Electronics	IXGX320N60B3		286			1 $35.58 10 $32.41 100 $23.51 1000 $23.38 10000 $23.38	Buy Now
TTI	IXGX320N60B3	Tube			300	1 - 10 - 100 - 1000 $31.19 10000 $31.19	Buy Now
TME	IXGX320N60B3		8		1	1 $26.06 10 $20.93 100 $19.39 1000 $19.39 10000 $19.39	Buy Now
IBS Electronics	IXGX320N60B3				300	1 - 10 - 100 $33.462 1000 $33.774 10000 $33.774	Buy Now
IXYS Corporation IXGK320N60B3 IGBT PT 600V 500A TO-264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGK320N60B3	Tube	143		1	1 $39.46 10 $39.46 100 $26.6072 1000 $26.6072 10000 $26.6072	Buy Now
Mouser Electronics	IXGK320N60B3		120			1 $39.46 10 $36.87 100 $26.6 1000 $26.6 10000 $26.6	Buy Now
TME	IXGK320N60B3				1	1 $24.52 10 $19.7 100 $17.54 1000 $17.54 10000 $17.54	Get Quote
IXYS Corporation IXDP20N60B IGBT NPT 600V 32A TO-220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXDP20N60B	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IXDP20N60B		230		1	1 - 10 - 100 $4.58 1000 $4.23 10000 $4.23	Buy Now
IXYS Corporation IXGP20N60B IGBT 600V 40A TO-220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGP20N60B	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGT20N60B IGBT 600V 40A TO-268AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGT20N60B	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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20N60B Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
20N60B	IXYS	Hiperfast(tm) Igbt	Original	PDF	114.27KB	4
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60B3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60BD1	IXYS	Hiperfast(tm) Igbt	Original	PDF	54.09KB	2

20N60B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
20N60B Abstract: s9011 Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20N60B O-24s 20N60B s9011	PDF
20n60B Contextual Info: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	20N60B O-220AB O-263 20n60B	PDF
20N60 datasheet Abstract: 20N60 20n60 G 20N60 to220 20N60B IGBT 20N60 Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20N60 20N60B O-220 20N60B IXDP20N06B 20N60 datasheet 20n60 G 20N60 to220 IGBT 20N60	PDF
Contextual Info: High Voltage IGBT with optional Diode IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Speed, Low Saturation Voltage C G Preliminary Data G G C E E E IXDP 20N60B D1 Symbol Conditions VCES TJ = 25°C to 150°C TO-220 AB C G = Gate,	Original	20N60 20N60B O-220	PDF
20N60 to220 Abstract: 20N60B 20n60 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1 Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20N60 20N60B O-220 20N60B IXDP20N06B 20N60 to220 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1	PDF
20n60b Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20N60B 20N60B O-268 O-247	PDF
Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20N60B	PDF
20n60 Contextual Info: IXDP 20N60 B VCES = 600 V IXDP 20N60 BD1 IC25 = 32 A VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20N60 20N60B O-220 20N60B IXDP20N06B	PDF
Contextual Info: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	20N60B O-220AB O-263	PDF
Contextual Info: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600	Original	20N60B2D1 IC110 8-06B 405B2	PDF
Contextual Info: HiPerFAST IGBT with Diode IXGH 20N60BU1 VCE sat typ 600 V 40 A 1.7 V t 100ns CES ^C25 P relim inary data Maximum Ratings Symbol Test Conditions VCES ^ = 25°C to 150°C 600 V VCGR T,J = 25°C to 150°C; RG t = 1 MQ 600 V V v GES Continuous ±20 V«„ T ransient	OCR Scan	20N60BU1 100ns O-247	PDF
Contextual Info: aixYS HiPerFAST IGBT IXGH 20N60B VCES ^C25 VCE sat typ t.fi = = = = 600 V 40 A 1.7 V 100 ns Prelim inary data Symbol Test Conditions VCES Tj Vcon Maximum Ratings 600 V T J, = 25°C to 150°C: Rrc = 1 MQ u t 600 V VGES Continuous ±20 V VGEM Transient ±30	OCR Scan	20N60B	PDF
20N60B Abstract: lc1512 Contextual Info: □ IXYS H H ifl JL æ* X HiPerFAST IGBT V CES IC25 V CE sat typ t IXGA 20N60B IXGP 20N60B 600 V 40 A 1.7 V 100 ns Preliminary data sheet Symbol Test C onditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£2 600	OCR Scan	20N60B O-220) O-220 O-263 lc1512	PDF
DSEP 15-06A Abstract: 20N60B2D1 IXSH20N60B2D1 IC ti 072 Contextual Info: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	20N60B2D1 IC110 DSEP 15-06A 20N60B2D1 IXSH20N60B2D1 IC ti 072	PDF

20N60BD1 Contextual Info: HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE sat typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES	Original	20N60BD1 20N60BD1 O-268 O-247	PDF
Contextual Info: □IXYS HiPerFAST IGBT with Diode V CES IXGT 20N60BD1 ^C25 V CE sat typ ^fi(typ) = 600 V 40 A = 1.7 V 100 ns ” Preliminary data sheet Maximum Ratings Symbol Test C onditions V CES T j = 25°C to 150°C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 600	OCR Scan	20N60BD1 O-247AD	PDF
IXBH 40N160 Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1 Contextual Info: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □	OCR Scan	20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1	PDF
Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat typ tfi IXGA 20N60B IXGP 20N60B = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	20N60B 20N60B O-263 O-220	PDF
Contextual Info: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	20N60B2D1 IC110 5-06A	PDF
20N60B2D1 Contextual Info: IXSA 20N60B2D1 IXSP 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600	Original	20N60B2D1 IC110 8-06B 405B2 20N60B2D1	PDF
ph-15 diode Contextual Info: Advanced Technical Information HiPerFAST IGBT with Diode IXGH IXGT 20N60BD1 20N60BD1 V CES ^C25 VCE sat typ t’fi(typ) Combi Pack Symbol Test Conditions Maximum Ratings T j = 25° C to 150" C 600 V Tj = 25' C to 150 C; RGf = 1 M li 600 V Continuous ±20	OCR Scan	20N60BD1 20N60BD1 O-268 O-247AD ph-15 diode	PDF
Contextual Info: HiPerFAST IGBT IXGA 1XGP 20N60B 20N60B VCES IC25 VCE sat typ = 600 = 40 = 1.7 tf , = 100 ns V A V Preliminary data sheet Maximum Ratings V C ES T, = 25°C to 150°C 600 V V CGR Tj = 25“C to 150°C; RGE = 1 MQ 600 V V GES Continuous ±20 V v GEM Transient	OCR Scan	20N60B 20N60B TQ-220AB O-263	PDF
30N120D1 Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 Contextual Info: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120	OCR Scan	O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1	PDF
20N60BD1 Contextual Info: HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE sat typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES	Original	20N60BD1 O-268 20N60BD1	PDF

20N60B Search Results

20N60B Price and Stock

IXYS Corporation IXGX320N60B3

IXYS Corporation IXGK320N60B3

IXYS Corporation IXDP20N60B

IXYS Corporation IXGP20N60B

IXYS Corporation IXGT20N60B

20N60B Datasheets (5)

20N60B Datasheets Context Search

20N60B

20n60B

20N60 datasheet

20N60 to220

20n60b

20n60

20N60B

DSEP 15-06A

20N60BD1

IXBH 40N160

20N60B2D1

ph-15 diode

30N120D1

20N60BD1

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