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    20N120A Search Results

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    20N120A Price and Stock

    IXYS Corporation IXGK120N120A3

    IGBT PT 1200V 240A TO-264
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    DigiKey IXGK120N120A3 Tube 423 1
    • 1 $47.83
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    • 100 $38.0892
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    Mouser Electronics IXGK120N120A3
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    TME IXGK120N120A3 1
    • 1 $36.59
    • 10 $29.15
    • 100 $26.2
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    STMicroelectronics SCT20N120AG

    SICFET N-CH 1200V 20A HIP247
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    DigiKey SCT20N120AG Tube 43 1
    • 1 $20.27
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    Avnet Americas SCT20N120AG Tube 32 Weeks 600
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    Mouser Electronics SCT20N120AG 596
    • 1 $15.59
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    Newark SCT20N120AG Bulk 1
    • 1 $19.1
    • 10 $17.29
    • 100 $14.76
    • 1000 $14.59
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    TME SCT20N120AG 5 1
    • 1 $17.22
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    Avnet Silica SCT20N120AG 17 Weeks 30
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    EBV Elektronik SCT20N120AG 33 Weeks 30
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    IXYS Corporation IXGP20N120A3

    IGBT PT 1200V 40A TO-220-3
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    DigiKey IXGP20N120A3 Tube 31 1
    • 1 $7.02
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    • 1000 $3.5245
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    Mouser Electronics IXGP20N120A3
    • 1 $7.01
    • 10 $7
    • 100 $4.79
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    Newark IXGP20N120A3 Bulk 1
    • 1 $7.05
    • 10 $6.57
    • 100 $5.03
    • 1000 $4.44
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    TME IXGP20N120A3 33 1
    • 1 $5.1
    • 10 $4.05
    • 100 $3.64
    • 1000 $3.64
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    IXYS Corporation IXGA20N120A3

    IGBT PT 1200V 40A TO-263AA
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    DigiKey IXGA20N120A3 Tube 1
    • 1 $8.45
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    • 100 $8.45
    • 1000 $3.68312
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    Mouser Electronics IXGA20N120A3
    • 1 $8.45
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    • 100 $4.43
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    TME IXGA20N120A3 172 1
    • 1 $5.35
    • 10 $4.26
    • 100 $3.82
    • 1000 $3.82
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    IXYS Corporation IXYP20N120A4

    IGBT PT 1200V 80A TO-220
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    DigiKey IXYP20N120A4 Tube 300
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    Mouser Electronics IXYP20N120A4
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    20N120A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MJ480

    Abstract: No abstract text available
    Text: IXDA 20N120AS High Voltage IGBT IC25 = 38 A = 1200 V VCES VCE sat typ = 2.4 V Short Circuit SOA Capability Square RBSOA TAB 1 h 3 TAB Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK


    Original
    20N120AS 20110118a MJ480 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXDA 20N120AS IC25 = 38 A = 1200 V VCES VCE sat typ = 2.4 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA TAB 1 h 3 TAB Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK


    Original
    20N120AS O-263 20110118a PDF

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original
    AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    IXBH 40N160

    Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1
    Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □


    OCR Scan
    20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Data High Voltage IGBT with Diode IXDH 20N120AU1 VCES = 1200 V iC25 = 30 A V CE sat typ = 2 5 VV SCSOA Capability Symbol Test Conditions V CES T j = 25°C to 150°C 1200 V Vco„ Tj = 25°C to 150°C; RaE = 1 MQ 1200 V v SES VGEM Continuous ±20


    OCR Scan
    20N120AU1 O-247 PDF

    30N120D1

    Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
    Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120


    OCR Scan
    O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 PDF

    DON60

    Abstract: No abstract text available
    Text: □IXYS High Voltage IGBT IXDA 20N120AS V CES ^C 25 v CE sat typ 1200 V 34 A 2.8 V Short Circuit SOA Capability Square RBSOA Preliminary Data Symbol Conditions Maximum Ratings ^CES Tj = 25°C to 150°C 1200 V VcGR Tj = 25°C to 150°C; FtGE= 20 ki2 1200 V


    OCR Scan
    20N120AS O-263 D-68623 00G4744 DON60 PDF

    20N120AU1

    Abstract: 20N120A IXDH20N120AU1
    Text: □IXYS High Voltage IGBT with Diode IXDH 20N120 AU1 VCES = 1200 V ' c a = 3 = 2.8 V s V c E Sa „ w 4 A Short Circuit SOA Capability Square RBSOA Preliminary Data Symbol Conditions Maximum Ratings VcES Tj = 25°C to 150°C 1200 V VcGR Tj = 25°C to 150°C; RGE= 20 k£2


    OCR Scan
    20N120 D-68623 004btn 20N120AU1 20N120A IXDH20N120AU1 PDF

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan
    AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 PDF

    b14 smd diode

    Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60
    Text: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60


    OCR Scan
    T0-220 O-263 O-247 O-247 T0-204 24N60 30N60 40N60 25N100 45N100 b14 smd diode B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60 PDF