Untitled
Abstract: No abstract text available
Text: IXFX 21N100F IXFK 21N100F HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX)
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21N100F
247TM
728B1
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 W Single MOSFET Die trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol
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21N100Q
21N100Q
247TM
O-264
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Untitled
Abstract: No abstract text available
Text: HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings
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21N100Q
247TM
125oC
728B1
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 21N100Q Electrically Isolated Back Surface VDSS = 1000 V ID25 = 19 A RDS(on) = 0.50 W trr £ 250 ns N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions
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ISOPLUS247TM
21N100Q
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Untitled
Abstract: No abstract text available
Text: IXFR 21N100Q HiPerFETTM Power MOSFETs ISOPLUS247TM Electrically Isolated Back Surface Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR Maximum Ratings 1000 1000 V V ±20 ±30 V V
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21N100Q
ISOPLUS247TM
125OC
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125OC
Abstract: No abstract text available
Text: IXFR 21N100Q HiPerFETTM Power MOSFETs ISOPLUS247TM Electrically Isolated Back Surface Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR Maximum Ratings 1000 1000 V V ±20 ±30 V V
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21N100Q
ISOPLUS247TM
125OC
728B1
125OC
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21N10
Abstract: 21N100Q 125OC
Text: HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings
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21N100Q
247TM
125oC
728B1
21N10
21N100Q
125OC
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21N100Q
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V ID25 = 21 A RDS on = 0.50 W Single MOSFET Die trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol
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O-264
21N100Q
21N100Q
247TM
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Untitled
Abstract: No abstract text available
Text: IXFN 21N100Q HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings
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21N100Q
OT-227
E153432
125OC
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21N100
Abstract: IXTN 85 N 20 21N10 IXTN21N100
Text: IXTK 21N100 IXTN 21N100 High Voltage MegaMOSTMFETs VDSS = 1000 V = 21 A ID25 RDS on = 0.55 Ω N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS TJ = 25°C to 150°C 1000 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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21N100
O-264
21N100
IXTN 85 N 20
21N10
IXTN21N100
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Untitled
Abstract: No abstract text available
Text: IXFR 21N100Q HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS ID25 = 1000 V = 18 A = 0.50 Ω RDS on (Electrically Isolated Back Surface) trr ≤ 250 ns N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions
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21N100Q
ISOPLUS247TM
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125OC
Abstract: ixfn21n100q
Text: HiPerFETTM Power MOSFETs Q-Class IXFN 21N100Q Single MOSFET Die VDSS = 1000 V = 21 A ID25 RDS on = 0.50 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings
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21N100Q
OT-227
E153432
125OC
125OC
ixfn21n100q
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Untitled
Abstract: No abstract text available
Text: HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings
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O-264
21N100Q
21N100Q
247TM
125oC
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21N100
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions VDSS VDGR
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21N100Q
247TM
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21N100Q
Abstract: 125OC
Text: IXFN 21N100Q HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die VDSS = 1000 V = 21 A ID25 RDS on = 0.50 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings
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21N100Q
OT-227
E153432
125OC
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21N100Q
125OC
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21N10
Abstract: No abstract text available
Text: IXFN 21N100Q HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B IXFN E153432 Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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21N100Q
OT-227
E153432
VOT-227
21N10
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21N100Q
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V ID25 = 21 A RDS on = 0.50 W Single MOSFET Die trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/ dt, Low trr PLUS 247TM (IXFX)
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21N100Q
21N100Q
247TM
O-264
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21N100Q
Abstract: 21N100 125OC
Text: HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions VDSS VDGR
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21N100Q
247TM
125OC
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21N100Q
21N100
125OC
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transistor 12n60c
Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design
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ISOPLUS247TM
ISOPLUS247TM
PLUS247TM-package
FBO16-08N
FBE22-06N1
21-05QC
22-08N
75-01F
21-08i01
transistor 12n60c
12N60c equivalent
30N120D1
13N50 equivalent
12n60c
MOSFET 1200v 30a
MOSFET 1000v 30a
30n120d
CS20-22MOF1
12N60c MOSFET
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21N100
Abstract: 21N10 ixtw DIXYS IXTN21N100
Text: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ
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21N100
O-264
Cto150
OT-227
21N100
21N10
ixtw
DIXYS
IXTN21N100
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DIODE B44 sot
Abstract: IXTK21 B44 diode IXTN21N100
Text: IXTK21 N100 21N100 High Voltage MegaMOS FETs DSS D25 RDS on = 1000 V = 21 A = 0.55 Q N-Channel, Enhancement Mode TO-264 AA (IXTK) Maximum Ratings IXTN IXTK Symbol Test Conditions VDSS T, = 25°C to 150°C Tj = 25°C to 150°C; Ras = 1 MO V«, Vas V
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IXTK21
IXTN21N100
O-264
21N100
21N100
DIODE B44 sot
B44 diode
IXTN21N100
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12N60c equivalent
Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t
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OCR Scan
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ISOPLUS220TM
US247TM
247TM
ISOPLUS22rM
ISOPLUS227TM
IXFE180N10
IXFE73N30Q
IXFE48N50Q
IXFE48N50QD2
12N60c equivalent
13N50 equivalent
equivalent of IGBT 12N60C
motor IG 2200 19
ixlf 19n250a
24N60CD1
19N250
32N50
004II
27N80Q
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75N1
Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH
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OCR Scan
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76N07-11
76N07-12
67N10
75N10
42N20
50N20
58N20
O-247
O-204
75N1
6n80
IXTM20N60
IRFP 260 M
ixfh
K 15N60
ixtn 44N50
KS 4400
204 3B
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40n80
Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18
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OCR Scan
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5-10A
52-14N01
52-16N01
55-12N
55-14N07
55-18N
60-08N
60-16N
62-08N
62-12N
40n80
13NB0
60N60
dsei 20-12
33N120
VUO 35-12 N 0 7
DS117-12A
DS117-12
26n60
4410PI
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