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    IXTK21 Search Results

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    IXTK21 Price and Stock

    Littelfuse Inc IXTK210P10T

    MOSFET P-CH -100V -210A TO-264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTK210P10T Tube 274 1
    • 1 $27.43
    • 10 $27.43
    • 100 $19.4116
    • 1000 $19.4116
    • 10000 $19.4116
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    Newark IXTK210P10T Bulk 16 1
    • 1 $18.27
    • 10 $18.27
    • 100 $18.27
    • 1000 $18.27
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    RS IXTK210P10T Bulk 8 Weeks 25
    • 1 -
    • 10 -
    • 100 $30.02
    • 1000 $30.02
    • 10000 $30.02
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    Quest Components IXTK210P10T 58
    • 1 $44.414
    • 10 $44.414
    • 100 $35.5312
    • 1000 $35.5312
    • 10000 $35.5312
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    CoreStaff Co Ltd IXTK210P10T 50
    • 1 $29.544
    • 10 $22.207
    • 100 $22.207
    • 1000 $22.207
    • 10000 $22.207
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    IXTK210P10T 23
    • 1 $29.544
    • 10 $22.207
    • 100 $22.207
    • 1000 $22.207
    • 10000 $22.207
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    IXYS Corporation IXTK21N100

    MOSFET N-CH 1000V 21A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTK21N100 Tube
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    New Advantage Corporation IXTK21N100 12 1
    • 1 -
    • 10 -
    • 100 $30.41
    • 1000 $30.41
    • 10000 $30.41
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    IXYS Corporation IXTK210P10T

    MOSFETs TrenchP Power MOSFETs
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTK210P10T 653
    • 1 $25.71
    • 10 $23.28
    • 100 $23.26
    • 1000 $21.95
    • 10000 $21.95
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    Quest Components IXTK210P10T 13
    • 1 $21.3623
    • 10 $21.3623
    • 100 $21.3623
    • 1000 $21.3623
    • 10000 $21.3623
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    TTI IXTK210P10T Tube 300
    • 1 -
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    • 1000 $19.41
    • 10000 $19.41
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    TME IXTK210P10T 4 1
    • 1 $26.93
    • 10 $26.93
    • 100 $21.31
    • 1000 $20.79
    • 10000 $20.79
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    New Advantage Corporation IXTK210P10T 66 1
    • 1 -
    • 10 $47.45
    • 100 $44.29
    • 1000 $44.29
    • 10000 $44.29
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    IXYS Integrated Circuits Division IXTK210P10T

    MOSFET DIS.210A 100V P-CH TO-264 TRENCHP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTK210P10T 83
    • 1 $35.54347
    • 10 $35.54347
    • 100 $33.2182
    • 1000 $33.2182
    • 10000 $33.2182
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    IXYS Integrated Circuits Division IXTK21N100

    MOSFET DIS.21A 1000V N-CH TO264 H.VOLTAGE THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTK21N100 15
    • 1 $24.40263
    • 10 $24.40263
    • 100 $22.8062
    • 1000 $22.8062
    • 10000 $22.8062
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    IXTK21 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTK21N100 IXYS 600V high voltage megaMOS FET Original PDF

    IXTK21 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXTK210P10T

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK210P10T IXTX210P10T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 100V - 210A Ω 7.5mΩ 200ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings


    Original     		IXTK210P10T IXTX210P10T 200ns O-264 PLUS247 -100A 210P10T PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTK210P10T IXTX210P10T = = ≤ ≤ RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 100V - 210A Ω 7.5mΩ 200ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings


    Original     		IXTK210P10T IXTX210P10T 200ns O-264 210P10T PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTK210P10T IXTX210P10T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 100V - 210A Ω 7.5mΩ 200ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings


    Original     		IXTK210P10T IXTX210P10T 200ns O-264 -100A 210P10T PDF

    IXAN0009

    Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
    Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power


    Original     		IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w PDF

    IXAN0011

    Abstract: 0011 resonant smps 500W smps 500w half bridge 2kw mosfet smps 500W half bridge converter 2kw 1kw full bridge converter smps smps 1kW DD408
    Text: IXAN0011 Driving Your MOSFETs Wild to Obtain Greater Efficiencies, Power Densities, and Lower Overall Costs. Sam S. Ochi Director of Integrated Circuits Research and Development IXYS Corporation 3540 Bassett St., Santa Clara California USA Phone: 408-982-4355, Fax: 408-496-0670


    Original     		IXAN0011 100KHz IXAN0011 0011 resonant smps 500W smps 500w half bridge 2kw mosfet smps 500W half bridge converter 2kw 1kw full bridge converter smps smps 1kW DD408 PDF

    DIODE B44 sot

    Abstract: IXTK21 B44 diode IXTN21N100
    Text: IXTK21 N100 IXTN21N100 High Voltage MegaMOS FETs DSS D25 RDS on = 1000 V = 21 A = 0.55 Q N-Channel, Enhancement Mode TO-264 AA (IXTK) Maximum Ratings IXTN IXTK Symbol Test Conditions VDSS T, = 25°C to 150°C Tj = 25°C to 150°C; Ras = 1 MO V«, Vas V


    OCR Scan     		IXTK21 IXTN21N100 O-264 21N100 21N100 DIODE B44 sot B44 diode IXTN21N100 PDF

    78737

    Abstract: No abstract text available
    Text: High Voltage MegaMOS FETs IXTK21N100 IXTN21N100 V DSS ^D25 R DS on =1000 V = 21 A = 0.55 fì N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions VDSS Tj = 25 °C to 150°C 1000 1000 V v DGR Tj = 25 °C to 150°C; RGS = 1 MQ 1000 1000 V V ss


    OCR Scan     		IXTK21N100 IXTN21N100 O-264 OT-227 E153432 ab22b 00D4D0S 78737 PDF

    21N100

    Abstract: 21N10 ixtw DIXYS IXTN21N100
    Text: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ


    OCR Scan     		21N100 O-264 Cto150 OT-227 21N100 21N10 ixtw DIXYS IXTN21N100 PDF

    Irfp250 irfp460

    Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
    Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)


    OCR Scan     		O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20 PDF

    30n50 mosfet

    Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
    Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600


    OCR Scan     		O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel PDF