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    21N10 Search Results

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    21N10 Price and Stock

    onsemi NVMFS021N10MCLT1G

    PTNG 100V LL SO8FL
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    DigiKey NVMFS021N10MCLT1G Digi-Reel 3,792 1
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    NVMFS021N10MCLT1G Cut Tape 3,792 1
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    NVMFS021N10MCLT1G Reel 1,500 1,500
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    Avnet Americas NVMFS021N10MCLT1G Reel 14 Weeks 3,000
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    Mouser Electronics NVMFS021N10MCLT1G 4,146
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    Richardson RFPD NVMFS021N10MCLT1G 3,000
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    EBV Elektronik NVMFS021N10MCLT1G 16 Weeks 1,500
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    Hammond Manufacturing 1421N100

    CLIP NUT STEEL 10-32 100/PK
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    DigiKey 1421N100 Bulk 6 1
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    Mouser Electronics 1421N100 148
    • 1 $75.13
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    RS 1421N100 Package 5 1
    • 1 $75.88
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    Powell Electronics 1421N100 244 1
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    Master Electronics 1421N100
    • 1 $70.17
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    Neutron USA 1421N100 50
    • 1 $166.06
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    Infineon Technologies AG SPP21N10

    MOSFET N-CH 100V 21A TO220-3
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    DigiKey SPP21N10 Tube 500
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    Rochester Electronics SPP21N10 355 1
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    IXYS Corporation IXTN21N100

    MOSFET N-CH 1000V 21A SOT227B
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    DigiKey IXTN21N100 Tube 10
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    Vyrian IXTN21N100 1,461
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    CTS Corporation 521N10025DTR

    2.5mm x 2.0mm Surface Mount HCMO
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    DigiKey 521N10025DTR Reel 3,000
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    Avnet Americas 521N10025DTR Reel 10 Weeks 3,000
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    21N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFX 21N100F IXFK 21N100F HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX)


    Original     		21N100F 247TM 728B1 PDF

    21N100

    Abstract: 21N10 ixtw DIXYS IXTN21N100
    Text: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ


    OCR Scan     		21N100 O-264 Cto150 OT-227 21N100 21N10 ixtw DIXYS IXTN21N100 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 W Single MOSFET Die trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol


    Original     		21N100Q 21N100Q 247TM O-264 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings


    Original     		21N100Q 247TM 125oC 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 21N100Q Electrically Isolated Back Surface VDSS = 1000 V ID25 = 19 A RDS(on) = 0.50 W trr £ 250 ns N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions


    Original     		ISOPLUS247TM 21N100Q PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFR 21N100Q HiPerFETTM Power MOSFETs ISOPLUS247TM Electrically Isolated Back Surface Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR Maximum Ratings 1000 1000 V V ±20 ±30 V V


    Original     		21N100Q ISOPLUS247TM 125OC 728B1 PDF

    125OC

    Abstract: No abstract text available
    Text: IXFR 21N100Q HiPerFETTM Power MOSFETs ISOPLUS247TM Electrically Isolated Back Surface Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR Maximum Ratings 1000 1000 V V ±20 ±30 V V


    Original     		21N100Q ISOPLUS247TM 125OC 728B1 125OC PDF

    21N10

    Abstract: 21N100Q 125OC
    Text: HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings


    Original     		21N100Q 247TM 125oC 728B1 21N10 21N100Q 125OC PDF

    21N100Q

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V ID25 = 21 A RDS on = 0.50 W Single MOSFET Die trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol


    Original     		O-264 21N100Q 21N100Q 247TM PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFN 21N100Q HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings


    Original     		21N100Q OT-227 E153432 125OC 728B1 PDF

    21N100

    Abstract: IXTN 85 N 20 21N10 IXTN21N100
    Text: IXTK 21N100 IXTN 21N100 High Voltage MegaMOSTMFETs VDSS = 1000 V = 21 A ID25 RDS on = 0.55 Ω N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS TJ = 25°C to 150°C 1000 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		21N100 O-264 21N100 IXTN 85 N 20 21N10 IXTN21N100 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFR 21N100Q HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS ID25 = 1000 V = 18 A = 0.50 Ω RDS on (Electrically Isolated Back Surface) trr ≤ 250 ns N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions


    Original     		21N100Q ISOPLUS247TM PDF

    125OC

    Abstract: ixfn21n100q
    Text: HiPerFETTM Power MOSFETs Q-Class IXFN 21N100Q Single MOSFET Die VDSS = 1000 V = 21 A ID25 RDS on = 0.50 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings


    Original     		21N100Q OT-227 E153432 125OC 125OC ixfn21n100q PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings


    Original     		O-264 21N100Q 21N100Q 247TM 125oC 728B1 PDF

    21N100Q

    Abstract: 21N100 21N10
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 21N100Q Electrically Isolated Back Surface VDSS ID25 RDS(on) = 1000 V = 19 A = 0.50 W trr £ 250 ns N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions


    Original     		ISOPLUS247TM 21N100Q 21N100Q 21N100 21N10 PDF

    21N100Q

    Abstract: 125OC
    Text: IXFN 21N100Q HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die VDSS = 1000 V = 21 A ID25 RDS on = 0.50 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings


    Original     		21N100Q OT-227 E153432 125OC 728B1 21N100Q 125OC PDF

    21N10

    Abstract: No abstract text available
    Text: IXFN 21N100Q HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B IXFN E153432 Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		21N100Q OT-227 E153432 VOT-227 21N10 PDF

    21N100Q

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V ID25 = 21 A RDS on = 0.50 W Single MOSFET Die trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/ dt, Low trr PLUS 247TM (IXFX)


    Original     		21N100Q 21N100Q 247TM O-264 PDF

    21N100Q

    Abstract: 21N100 125OC
    Text: HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions VDSS VDGR


    Original     		21N100Q 247TM 125OC 728B1 21N100Q 21N100 125OC PDF

    21N10

    Abstract: SPB21N10
    Text: 21N10 21N10,21N10 Target data sheet SIPMOS =Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode •=175°C operating temperature • Avalanche rated P-TO262-3-1 100 V RDS on 85 mΩ ID 21 A P-TO263-3-2 P-TO220-3-1 • dv/dt rated


    Original     		SPI21N10 SPP21N10 SPB21N10 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPB21N10 SPI21N10 21N10 PDF

    DIODE B44 sot

    Abstract: IXTK21 B44 diode IXTN21N100
    Text: IXTK21 N100 21N100 High Voltage MegaMOS FETs DSS D25 RDS on = 1000 V = 21 A = 0.55 Q N-Channel, Enhancement Mode TO-264 AA (IXTK) Maximum Ratings IXTN IXTK Symbol Test Conditions VDSS T, = 25°C to 150°C Tj = 25°C to 150°C; Ras = 1 MO V«, Vas V


    OCR Scan     		IXTK21 IXTN21N100 O-264 21N100 21N100 DIODE B44 sot B44 diode IXTN21N100 PDF

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET PDF

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


    OCR Scan     		ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q PDF

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan     		76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B PDF