40-SQ
Abstract: 40DIP600
Text: KM23C41 OOD G CMOS MASK ROM 4M-Bit (512Kx8 256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access tim e : 80ns(M ax.) • Supply voltage : single +5V • Current consumption
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KM23C41
512Kx8
256Kx16)
23C4100D
40-DIP-600
23C4100DG
40-SQ
P-525
23C4100D
40DIP600
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Untitled
Abstract: No abstract text available
Text: KM23C41 OOD E T CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access tim e : 80ns(M ax.) • Supply voltage : single +5V • Current consumption
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KM23C41
512Kx8
/256Kx16)
23C4100D
44-TSQP2-400
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1136L
Abstract: No abstract text available
Text: KM23C41 OOD G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable orginization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Fast access tim e : 80ns(M ax.) • Supply voltage : single +5V • Current consumption
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KM23C41
512Kx8
/256Kx16)
23C4100D
40-DIP-600
23C4100DG
40-SQP-525
40-DIP-600C
1136L
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ic tl 0741
Abstract: tl 0741
Text: KM23C41 OOD E T CMOS MASK ROM 4M-Bit (512Kx8 256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access tim e : 80ns(M ax.) • Supply voltage : single +5V • Current consumption
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OCR Scan
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KM23C41
512Kx8
256Kx16)
23C4100D
44-TSQ
P2-400
44-TSOP2-400)
ic tl 0741
tl 0741
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48TSOP1
Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
Text: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15
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512KX8
KM23C400QD
KM23C4QOOD
KM23C4Q00D
KM23C40QQD
TY-10
KM23C4000D
7Y-12
KM23V4000D
48TSOP1
MX* 64M-Bit eprom
TY15
km23c32000cg-10
23v322
KM23C16205BSG-10
7Y12
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