BB OPA627AU
Abstract: phase failure / phase reversal OPA627AP PWS740-3 OPA111 OPA627 OPA627AM OPA627BM OPA637 OPA637AM
Text: OPA627 OPA637 OPA 627 OPA 627 Precision High-Speed Difet ® OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS ● VERY LOW NOISE: 4.5nV/√Hz at 10kHz ● FAST SETTLING TIME: OPA627—550ns to 0.01% OPA637—450ns to 0.01% ● PRECISION INSTRUMENTATION ● FAST DATA ACQUISITION
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OPA627
OPA637
10kHz
OPA627--550ns
OPA637--450ns
OPA627:
OPA637:
OPA627
BB OPA627AU
phase failure / phase reversal
OPA627AP
PWS740-3
OPA111
OPA627AM
OPA627BM
OPA637
OPA637AM
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Untitled
Abstract: No abstract text available
Text: TPS2145, TPS2147 TPS2155, TPS2157 SLVS333 − AUGUST 2001 LDO AND DUAL SWITCH WITH CONTROLLED RISE TIMES FOR DSP AND PORTABLE APPLICATIONS FEATURES D Two 340-mΩ Typical High-Side MOSFETs D 200 mA Low-Dropout Voltage Regulator In D D D D D D D DESCRIPTION
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TPS2145,
TPS2147
TPS2155,
TPS2157
SLVS333
340-m
10-Pin
14-Pin
TPS2145)
TPS2147)
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments DAC8871 DA C8 871 SBAS396 – JUNE 2007 16-Bit, Single-Channel, ±18V Output Unbuffered , Ultra-Low Power, Serial Interface DIGITAL-TO-ANALOG CONVERTER FEATURES • • • • • • • • • • DESCRIPTION
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DAC8871
SBAS396
16-Bit,
16-Bit
10nV/Hz
50MHz
16-Pin
DAC8871
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Untitled
Abstract: No abstract text available
Text: VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance per ch. RON 120m Current limitation (typ) ILIMH 3.5A VCLAMP 40V Drain-Source clamp voltage SO-8 ) s ( ct u d o • Linear current limitation ■ Thermal shut down
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VNS3NV04D-E
VNS3NV04D-E
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teseo
Abstract: STA2058 STA5620 teseo 2 data output LFBGA144 LQFP64 STA2058EX usb i2c spi converter 03996E-1
Text: STA2058 Teseo GPS Platform high-sensitivity baseband Data Brief Features • Single chip baseband with embedded flash ■ Complete embedded memory system: – FLASH 256K+16K bytes – RAM 64K bytes ■ 66-MHz ARM7TDMI 32 bit processor ■ High Performance GPS engine HPGPS
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STA2058
66-MHz
-146dBm
-159dBm
64Mbite
LQFP64
LFBGA144
teseo
STA2058
STA5620
teseo 2 data output
LFBGA144
LQFP64
STA2058EX
usb i2c spi converter
03996E-1
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MJD31C
Abstract: MJD32C MJD32CT4
Text: MJD32C Low voltage PNP power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology
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MJD32C
O-252
MJD31C
O-252
MJD32CT4
MJD31C
MJD32C
MJD32CT4
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LQFP64 reel size
Abstract: STA2058 STA5620 LFBGA144 teseo teseo 2 data output LQFP64 STA2058EX timer2 A2F4
Text: STA2058 TESEO GPS platform high-sensitivity baseband Data Brief Features • Single chip baseband with embedded Flash ■ Complete embedded memory system: – Flash 256 KB +16 Kbytes – RAM 64 Kbytes LQFP64 LFBGA144 ■ 66 MHz ARM7TDMI 32 bit processor
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STA2058
LQFP64
LFBGA144
STA2058
25x25mm)
LQFP64 reel size
STA5620
LFBGA144
teseo
teseo 2 data output
LQFP64
STA2058EX
timer2
A2F4
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d1 marking code dpak transistor
Abstract: MJD32CT4
Text: MJD32C Low voltage PNP power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252
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MJD32C
O-252
MJD31C
O-252
MJD32C
MJD32CT4
d1 marking code dpak transistor
MJD32CT4
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Untitled
Abstract: No abstract text available
Text: STA2058 TESEO GPS platform high-sensitivity baseband Data Brief Features • Single chip baseband with embedded Flash ■ Complete embedded memory system: – Flash 256 KB +16 Kbytes – RAM 64 Kbytes LQFP64 LFBGA144 ■ 66 MHz ARM7TDMI 32 bit processor
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STA2058
LQFP64
LFBGA144
STA2058
25x25mm)
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DM6437 CMOS
Abstract: TMS320DM6437 Evaluation Module dm6437
Text: TMS320DM6437 Digital Media Processor www.ti.com SPRS345B – NOVEMBER 2006 – REVISED MARCH 2007 1 TMS320DM6437 Digital Media Processor • • • • High-Performance Digital Media Processor DM6437 – 2.5-, 2.-, 1.67-ns Instruction Cycle Time – 400-, 500-, 600-MHz C64x+ Clock Rate
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TMS320DM6437
SPRS345B
DM6437)
67-ns
600-MHz
32-Bit
TMS320C64x
32-/40-Bit)
32-Bit,
DM6437 CMOS
TMS320DM6437 Evaluation Module
dm6437
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Untitled
Abstract: No abstract text available
Text: VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance per ch. RON 120m Current limitation (typ) ILIMH 3.5A VCLAMP 40V Drain-Source clamp voltage SO-8 • Linear current limitation ■ Thermal shut down ■ Short circuit protection
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VNS3NV04D-E
VNS3NV04D-E
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JESD97
Abstract: MJD31C MJD32C MJD32CT4
Text: MJD32C Low voltage PNP power transistor Features • NPN type is MJD31C ■ Surface-mounting TO-252 power package in tape & reel Applications ■ 3 1 General purpose switching and amplifier Description DPAK TO-252 The device is manufactured in Planar technology
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MJD32C
MJD31C
O-252
O-252
MJD32CT4
JESD97
MJD31C
MJD32C
MJD32CT4
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Untitled
Abstract: No abstract text available
Text: 2 T H I S DRAWI N G IS U N P U B L I S H E D . C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY T Y C O E L E C T R O N I C S C O R P O R A T I O N A L L R I G H T S R E S E R V E D . LOC 20 GP REV I S IONS D I ST 00 LT R DESCRIPTION DAT E
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5JUN2007
25JUN2007
N61NEER
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