Untitled
Abstract: No abstract text available
Text: Qualification Test Report 501-580 26Jul04 Rev A EC 0990-0953-04 Multimode LC Connectors 1. INTRODUCTION 1.1. Purpose Testing was performed on Duplex LC Multimode Cable Assemblies and Duplex LC Adapters to determine their conformance to the requirements of Product Specification 108-2173 Revision A.
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26Jul04
B028692-025.
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Untitled
Abstract: No abstract text available
Text: TLMEK3100 VISHAY Vishay Semiconductors Bicolor SMD LED Description These devices have been designed to meet the increasing demand for surface mounting technology. The package of the TLMEK3100 is the PLCC-3 equivalent to a size B tantalum capacitor . It consists of a lead frame which is embedded in a
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TLMEK3100
TLMEK3100
D-74025
26-Jul-04
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Untitled
Abstract: No abstract text available
Text: TLMV3100 VISHAY Vishay Semiconductors Bicolor SMD LED Description These devices have been designed to meet the increasing demand for surface mounting technology. The package of the TLMV3100 is the PLCC-3 equivalent to a size B tantalum capacitor . It consists of a lead frame which is embedded in a
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TLMV3100
TLMV3100
D-74025
26-Jul-04
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Si4392DY
Abstract: Si4392DY-T1
Text: Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.00975 @ VGS = 10 V 12.5 0.01375 @ VGS = 4.5 V
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Si4392DY
Si4392DY-T1
Si4392DY--E3
Si4392DY-T1--E3
S-41427--Rev.
26-Jul-04
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Si4500BDY
Abstract: Si4500BDY-T1 Si4500
Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.020 @ VGS = 4.5 V 9.1 0.030 @ VGS = 2.5 V 7.5 0.060 @ VGS = −4.5 V −5.3
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Si4500BDY
Si4500BDY-T1
Si4500BDY--E3
Si4500BDY-T1--E3
S-41428--Rev.
26-Jul-04
Si4500
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S-41426-Rev
Abstract: 41426 Si4812DY Si4812DY-T1 s4142
Text: Si4812DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9 0.028 @ VGS = 4.5 V 7.3 D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY
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Si4812DY
Si4812DY-T1
Si4812DY--E3
Si4812DY-T1--E3
S-41426--Rev.
26-Jul-04
S-41426-Rev
41426
s4142
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C4062
Abstract: SiP7805 S4140
Text: SiP78xx Series New Product Vishay Siliconix Three-Terminal Fixed Positive Voltage Regulators SiP7805 SiP7806 SiP7808 SiP7809 FEATURES D D D D D D SiP7810 SiP7812 SiP7815 SiP7818 SiP7824 MECHANICAL DATA Output Current In Excess Of 1.0 A No External Components Required
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SiP78xx
SiP7805
SiP7806
SiP7808
SiP7809
SiP7810
SiP7812
SiP7815
SiP7818
SiP7824
C4062
S4140
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Untitled
Abstract: No abstract text available
Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.020 @ VGS = 4.5 V 9.1 0.030 @ VGS = 2.5 V 7.5 0.060 @ VGS = −4.5 V −5.3
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Si4500BDY
Si4500BDY-T1
Si4500BDY--E3
Si4500BDY-T1--E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.00975 @ VGS = 10 V 12.5 0.01375 @ VGS = 4.5 V
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Si4392DY
Si4392DY-T1
Si4392DY--E3
Si4392DY-T1--E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: ESH1A thru ESH1D Vishay Semiconductors New Product formerly General Semiconductor Surface Mount Ultrafast Plastic Rectifiers Reverse Voltage 50 to 200 V Forward Current 1.0 A Reverse Recovery Time 25 ns DO-214AC SMA Cathode Band 0.065 (1.65) Mounting Pad Layout
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DO-214AC
26-Jul-04
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WIRE JUMPER
Abstract: No abstract text available
Text: 2306 101 90. Vishay BCcomponents Wire Jumper FEATURES ∑ Available in two diameters. ∑ Excellent solderability characteristics. ∑ Different types of packaging and taping configurations available. APPLICATIONS ∑ General industrial applications. ∑ General equipments.
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2306rements.
250mm
26-Jul-04
WIRE JUMPER
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Roederstein EKI
Abstract: No abstract text available
Text: EKI Vishay Roederstein Aluminum Capacitors Low Leakage Current Radial Style FEATURES • • • • • Polarized Aluminum electrolytic capacitor High C•U product with miniature dimensions Low leakage current Low energy requirement Large temperature range: -55 °C / 105 °C
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I00AA168H00
EKI00AA210H00
EKI00BA215H00
EKI00BA222H00
EKI00PB233H00
EKI00PB247H00
26-Jul-04
Roederstein EKI
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S-41427
Abstract: Si7392DP Si7392DP-T1
Text: Si7392DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETr FEATURES D Extremely Low Qgd WFET Technology for Low Switching Losses D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY
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Si7392DP
07-mm
Si7392DP-T1
S-41427--Rev.
26-Jul-04
S-41427
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SIF912EDZ
Abstract: No abstract text available
Text: SiF912EDZ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.019 @ VGS = 4.5 V 10.7 0.0195 @ VGS = 4.0 V 10.5 0.022 @ VGS = 3.1 V 9.9 0.027 @ VGS = 2.5 V 9.0 D TrenchFETr Power MOSFETS: 2.5-V Rated
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SiF912EDZ
SiF912EDZ-T1--E3
S-41430--Rev.
26-Jul-04
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Untitled
Abstract: No abstract text available
Text: 592D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Coated, Maximum CV FEATURES • • • • • PERFORMANCE CHARACTERISTICS Operating Temperature: - 55°C to + 85°C. To + 125°C with voltage derating. New extended range offerings.
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EIA-481-1
178mm]
330mm]
535BAAC
26-Jul-04
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EKI00BA310C00
Abstract: EKI00PB310D00 EKI00PB322C00 Roederstein EKI
Text: EKI Vishay Roederstein Aluminum Capacitors Low Leakage Current Radial Style FEATURES • • • • • Polarized Aluminum electrolytic capacitor High C•U product with miniature dimensions Low leakage current Low energy requirement Large temperature range: -55 °C / 105 °C
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life005
26-Jul-04
EKI00AA247C00
EKI00BA310C00
EKI00PB310D00
EKI00PB322C00
Roederstein EKI
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EKI00AA147H00
Abstract: EKI00BA247E00 EKI00AA110H00 Roederstein Electronics
Text: EKI Vishay Roederstein Aluminum Capacitors Low Leakage Current Radial Style FEATURES • • • • • Polarized Aluminum electrolytic capacitor High C•U product with miniature dimensions Low leakage current Low energy requirement Large temperature range: -55°C / 105°C
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0AA015H00
EKI00AA022H00
EKI00AA033H00
EKI00AA047H00
EKI00AA068H00
EKI00AA110H00
EKI00AA115H00
EKI00AA122H00
EKI00AA133H00
EKI00AA147H00
EKI00BA247E00
Roederstein Electronics
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Untitled
Abstract: No abstract text available
Text: Solid Tantalum Chip Capacitor FEATURES • Offers a 2-mm height • New U, V, and W case sizes are similar in footprint to C, D, and R case sizes 592D • Very low ESR limits • Conformal-coated • Broad capacitance range of 1 µF to 1000 µF • Can be used as an alternative to polymer in certain applications
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26-Jul-04
VMN-PT9051-0407
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Si4812DY
Abstract: Si4812DY-T1
Text: Si4812DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9 0.028 @ VGS = 4.5 V 7.3 D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY
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Si4812DY
Si4812DY-T1
Si4812DY--E3
Si4812DY-T1--E3
18-Jul-08
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AS2702
Abstract: AS2701A AS2702-16 AS2702-16T AS2702-20 AS2702-20T SOIC16 SOIC20 sap4.1
Text: AS2702 AS-Interface Slave IC DATA SHEET General Description Key Features AS2702 SAP4.1 is a new generation AS-Interface slave device, which supports AS-Interface bus systems with up to 62 slave modules. • Each slave module is equipped with an AS2702 device,
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AS2702
AS2702
26-Jul-04
AS2701A
AS2702-16
AS2702-16T
AS2702-20
AS2702-20T
SOIC16
SOIC20
sap4.1
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VISHAY EKI
Abstract: EKI00BA310C00 EKI00PB310D00 EKI00PB322C00 EKI00AA222E
Text: EKI Vishay Roederstein Aluminum Capacitors Low Leakage Current Radial Style FEATURES • • • • • Polarized Aluminum electrolytic capacitor High C•U product with miniature dimensions Low leakage current Low energy requirement Large temperature range: -55 °C / 105 °C
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08-Apr-05
VISHAY EKI
EKI00BA310C00
EKI00PB310D00
EKI00PB322C00
EKI00AA222E
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591D
Abstract: No abstract text available
Text: 591D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Low ESR, Conformal Coated, Maximum CV FEATURES • • • • • New case size offerings. 1.2mm to 2mm height Terminations: Lead Pb -free (2) standard. Very low ESR 8mm, 12mm tape and reel packaging available per EIA481-1 and reeling per IEC 286-3. 7” [178mm] standard.
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EIA481-1
178mm]
330mm]
535BAAC
10WVDC,
16WVDC,
20WVDC,
25WVDC
26-Jul-04
591D
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Untitled
Abstract: No abstract text available
Text: Si4812DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9 0.028 @ VGS = 4.5 V 7.3 D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY
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Si4812DY
Si4812DY-T1
Si4812DY--E3
Si4812DY-T1--E3
08-Apr-05
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tyco 17105-3608
Abstract: 17105-3608 pa 17105-3608 00779 ECR-05-01
Text: 4 THIS DRAWING IS UNPUBLISHED. 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 ALL RIGHTS RESERVED. LOC DIST AF 50 R E V IS IO N S LTR F DESCRIPTION DATE REV PER ECR—05—01 7287 0 6A P R 06 DWN APVD HMR JR D D DIMPLE BOTH SIDES C
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06APR06
26JUL04
17105EV
31MAR2000
tyco 17105-3608
17105-3608
pa 17105-3608
00779
ECR-05-01
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