transistor TL131
Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB212507SH
PTFB212507SH
200-watt
H-34288G-4/2
transistor TL131
TL231
tl127
TL130
tl131
transistor tl120
8C802
tl-130
LM78L05ACMND
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Untitled
Abstract: No abstract text available
Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.
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PTFA091503EL
PTFA091503EL
150-watt,
H-33288-6
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PTFB212507SH
Abstract: No abstract text available
Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB212507SH
PTFB212507SH
200-watt
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TRANSISTOR tl131
Abstract: tl239
Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include
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PTFB082817FH
PTFB082817FH
H-34288-4/2
TRANSISTOR tl131
tl239
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PTFB090901EA
Abstract: No abstract text available
Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced
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PTFB090901EA
PTFB090901FA
PTFB090901EA
PTFB090901FA
90-watt
H-37265-2
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PTFB090901
Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier
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PTFB090901EA
PTFB090901FA
PTFB090901FA
90-watt
H-36265-2
H-37265-2
PTFB090901
TL127
569w
100B4R7BW500X
PCC104BCTND
PCC104bct-nd
TRANSISTOR c104
TRANSISTOR c801
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TRANSISTOR tl131
Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications
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PTFB182503EL
PTFB182503FL
PTFB182503EL
PTFB182503FL
240-watt
TRANSISTOR tl131
ptfb192503
tl134
TL105B
TL231
PTFB192503EL V1
c103 TRANSISTOR
RO4350
TL117
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TRANSISTOR tl131
Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA
Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power
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PTFB212503EL
PTFB212503FL
PTFB212503EL
PTFB212503FL
240-watt
TRANSISTOR tl131
tl134
tl127
TL234
TL107
tl117
atc100b6r2
tl227
c103 TRANSISTOR DATA
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Untitled
Abstract: No abstract text available
Text: PTFC262157SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157SH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum
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PTFC262157SH
PTFC262157SH
H-34288G-4/2
c262157sh-gr1
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J103 transistor
Abstract: transistor c223
Text: PTFB072707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 – 768 MHz Description The PTFB072707FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced
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PTFB072707FH
PTFB072707FH
b072707fh-gr1
J103 transistor
transistor c223
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PTFB090901EA
Abstract: No abstract text available
Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier
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PTFB090901EA
PTFB090901FA
PTFB090901EA
PTFB090901FA
90-watt
H-37265-2
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PTFB192503EL
Abstract: ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231
Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier
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PTFB192503EL
PTFB192503FL
PTFB192503EL
PTFB192503FL
240-watt
H-33288-6
H-34288-4/2
ATC100A8R2BW150XB
c103 TRANSISTOR
tl131
TRANSISTOR c104
C802
C803
R250
587-1818-2-ND
TL231
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PTFB192503EL V1
Abstract: No abstract text available
Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier
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PTFB192503EL
PTFB192503FL
PTFB192503EL
PTFB192503FL
240-watt
H-33288-6
H-34288-4/2
PTFB192503EL V1
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PTFB212503FL
Abstract: No abstract text available
Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power
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PTFB212503EL
PTFB212503FL
PTFB212503EL
PTFB212503FL
240-watt
H-33288-6
H-34288-4/2
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Untitled
Abstract: No abstract text available
Text: PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum
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PTFC262157FH
PTFC262157FH
H-34288G-4/2
c262157sh-gr1
48stances.
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Untitled
Abstract: No abstract text available
Text: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.
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PTFA091203EL
PTFA091203EL
120-watt,
H-33288-6
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TL2012
Abstract: TRANSISTOR tl131 C801 C802 C803 R250 8C802 tl1252 TL1-16 ATC 221
Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier
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PTFB211503EL
PTFB211503FL
PTFB211503EL
PTFB211503FL
150-watt,
TL2012
TRANSISTOR tl131
C801
C802
C803
R250
8C802
tl1252
TL1-16
ATC 221
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TL235
Abstract: LM78L05ACM-ND LM78L05ACMND PTFB091507 TL230 ATC100B330JW500XB TL1081
Text: PTFB091507FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz Description The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz
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PTFB091507FH
PTFB091507FH
H-34288-4/2
16ubstances.
TL235
LM78L05ACM-ND
LM78L05ACMND
PTFB091507
TL230
ATC100B330JW500XB
TL1081
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TL117
Abstract: c103 TRANSISTOR DATA TL130 TRANSISTOR tl131 BCP5616TA c103 TRANSISTOR TL131 TRANSISTOR c104 C801 C802
Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier
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PTFB211503EL
PTFB211503FL
PTFB211503EL
PTFB211503FL
150-watt,
TL117
c103 TRANSISTOR DATA
TL130
TRANSISTOR tl131
BCP5616TA
c103 TRANSISTOR
TL131
TRANSISTOR c104
C801
C802
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TRANSISTOR tl131
Abstract: C805 capacitor C207 capacitor ATC200B103MW LM78L05ACM-ND TL131 LM78L05ACMND TL228 capacitor 471 c103 TRANSISTOR
Text: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.
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PTFA091203EL
PTFA091203EL
120-watt,
H-33288-4/2
TRANSISTOR tl131
C805 capacitor
C207 capacitor
ATC200B103MW
LM78L05ACM-ND
TL131
LM78L05ACMND
TL228
capacitor 471
c103 TRANSISTOR
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PTFB092707FH
Abstract: No abstract text available
Text: PTFB092707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 925 – 960 MHz Description The PTFB092707FH is a 270-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.
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PTFB092707FH
PTFB092707FH
270-watt
H-37288L-4/2
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tl136
Abstract: TRANSISTOR tl131 LM78L05ACM-ND LM78L05ACMND TL127 3882 PTFA091203EL
Text: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.
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PTFA091203EL
PTFA091203EL
120-watt,
H-33288-6
tl136
TRANSISTOR tl131
LM78L05ACM-ND
LM78L05ACMND
TL127
3882
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LM78L05ACM-ND
Abstract: LM78L05ACMND C210 TL122
Text: PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band. This device features internal I/O matching and thermally-enhanced
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PTFA091203EL
PTFA091203EL
120-watt,
H-33288-6
LM78L05ACM-ND
LM78L05ACMND
C210
TL122
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TL139
Abstract: c803
Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier
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PTFB211503EL
PTFB211503FL
PTFB211503EL
PTFB211503FL
150-watt,
H-33288-6
H-34288-4/2
TL139
c803
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