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onsemi FDB28N30TM MOSFET N-CH 300V 28A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDB28N30TM	Reel	4,500		800	1 - 10 - 100 - 1000 $0.89485 10000 $0.88263	Buy Now
Avnet Americas	FDB28N30TM	Reel	800	22 Weeks	800	1 - 10 - 100 - 1000 $0.94854 10000 $0.83071	Buy Now
Mouser Electronics	FDB28N30TM		20,285			1 $2.31 10 $1.59 100 $1.14 1000 $1.01 10000 $1.01	Buy Now
Newark	FDB28N30TM	Cut Tape	1,624		1	1 $2.69 10 $2.05 100 $1.51 1000 $1.43 10000 $1.23	Buy Now
	FDB28N30TM	Reel	800		800	1 $1.19 10 $1.19 100 $1.19 1000 $1.19 10000 $1.06	Buy Now
	FDB28N30TM	Reel			800	1 $1.19 10 $1.19 100 $1.19 1000 $1.19 10000 $1.06	Buy Now
Rochester Electronics	FDB28N30TM		20		1	1 $0.9807 10 $0.9807 100 $0.9219 1000 $0.8336 10000 $0.8336	Buy Now

TME	FDB28N30TM		613		1	1 $2.06 10 $1.5 100 $1.38 1000 $1.13 10000 $1.13	Buy Now
Richardson RFPD	FDB28N30TM				800	1 - 10 - 100 - 1000 $0.88 10000 $0.88	Buy Now
Avnet Silica	FDB28N30TM			23 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FDB28N30TM			24 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components EXB-28N303JX RES ARRAY 2 RES 30K OHM 0804 HF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EXB-28N303JX	Reel			20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	EXB-28N303JX					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	EXB-28N303JX					1 - 10 - 100 - 1000 - 10000 $0.0126	Buy Now
Panasonic Electronic Components EXB-28N300JX RES ARRAY 2 RES 30 OHM 0804 HF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EXB-28N300JX	Reel			20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	EXB-28N300JX					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	EXB-28N300JX					1 - 10 - 100 - 1000 - 10000 $0.0126	Buy Now
SiTime Corporation SIT9365AI-1B2-28N30.720000 MEMS OSC XO 30.7200MHZ LVPECL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT9365AI-1B2-28N30.720000				1	1 $13.29 10 $12.432 100 $11.5745 1000 $11.40304 10000 $11.40304	Buy Now
SiTime Corporation SIT9365AI-4E2-28N30.720000 MEMS OSC XO 30.7200MHZ HCSL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT9365AI-4E2-28N30.720000				1	1 $15.87 10 $13.71 100 $11.8586 1000 $10.7232 10000 $10.7232	Buy Now

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28N30 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH 28N30B IXGT 28N30B VCES IC25 VCE sat typ tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 56 A IC90	Original	PDF	28N30B 28N30B O-247 O-268 O-268 O-268AA
28N30 Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE sat typ tfi(typ) = 300 V = 56 A = 1.6 V = 180 ns Preliminary data Symbol Test Conditions VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient	Original	PDF	28N30 O-268 O-247 O-268AA 28N30
752 smd Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH 28N30A IXGT 28N30A VCES = = IC25 VCE sat typ = tfi(typ) = 300 56 1.85 120 V A V ns Preliminary data TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES	Original	PDF	28N30A O-247 O-268 O-268AA 752 smd
28N30 Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE sat typ tfi(typ) = = = = 300 V 56 A 1.6 V 180 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous	Original	PDF	28N30 28N30 O-268 O-247
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH 28N30A IXGT 28N30A VCES = IC25 = VCE sat typ = = tfi(typ) 300 56 1.85 120 V A V ns Preliminary data TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES	Original	PDF	28N30A 28N30A O-247 O-268AA
12n60c Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60 Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM	Original	PDF	O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE sat typ tfi(typ) = 300 V = 56 A = 1.6 V = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V	Original	PDF	28N30 28N30 O-268 O-247 O-268AA
ad 161 Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH 28N30B IXGT 28N30B VCES IC25 VCE sat typ tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 56 A IC90	Original	PDF	28N30B O-268 O-247 O-268AA ad 161
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	PDF	PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	PDF	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Untitled Abstract: No abstract text available Text: ÖIXYS HiPerFAST IGBT IXGH 28N30B IXGT 28N30B 300 56 2.1 55 V CES ^C25 V CE sat typ t fi(typ) V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 300 V VCGR Tj = 25°C to 150°C; RGE = 1 M£i 300 V v GES Continuous	OCR Scan	PDF	28N30B
28N30 Abstract: No abstract text available Text: r i T v v < v HiPerFAST IGBT VCES IXGH 28N30 IXGT 28N30 ^C25 V CE sat typ ^fi(typ) 300 V 56 A 1.6 V 180 ns Preliminary data sheet Maximum Ratings Symbol Test C onditions V CES T j = 25°C to 150°C 300 V V CGR T j = 25°C to 150°C; RGE = 1 MQ 300 V v GES	OCR Scan	PDF	28N30 28N30 O-268 O-268 O-247
7N60B Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28	OCR Scan	PDF	30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh
28N30B Abstract: No abstract text available Text: DIXYS IXGH 28N30B IXGT 28N30B HIPerFAST IGBT VCES ^C25 V CE sat typ trfi(typ,i /K • Symbol ~ 300 56 2.1 55 V A V ns TO-247 AD Test Conditions : 25° C to 150=C V CES v OCR T, V Continuous =2 5 ° C to 150°C; R . 1 MO (TAB) Transient T c = 2 5 °C ^C90	OCR Scan	PDF	28N30B 28N30B O-247 O-268 O-268

28n30a Abstract: No abstract text available Text: niXYS HIPerFAST“ IGBT IXGH 28N30A IXGT 28N30A CES ^C25 V CE sat typ t fi(typ) 300 56 1.85 120 V A V ns P re lim in a ry data sh ee t i f Maximum Ratings Symbol Test Conditions V CES T, =25°C to 150°C 300 V Tj = 25° C to 150° C; RGE= 1 M£i 300 V V GES	OCR Scan	PDF	28N30A 28N30A O-247 O-268
120n60b Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *	OCR Scan	PDF	O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Untitled Abstract: No abstract text available Text: H flHVwÎ Y A- Y ^JL sIk»!? HiPerFAST IGBT IXGH 28N30B IXGT 28N30B V CES 300 56 2.1 55 ^C25 V CE sat typ t'fi(typ) V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T j = 25°C to 150°C 300 V V CGR T j = 25°C to 150°C; RGE = 1 MQ	OCR Scan	PDF	28N30B 28N30B O-247 O-268 Applica193
Untitled Abstract: No abstract text available Text: ÖIXYS HiPerFAST IGBT VCES IXGH 28N30 IXGT 28N30 ^C25 V CE sat typ tfi(ty p ) 300 V 56 A 1.6 V 180 ns Preliminary data sheet Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 300 V VCGR Tj = 25°C to 150°C; RGE = 1 M£i 300 V v GES Continuous	OCR Scan	PDF	28N30 O-268 O-247
HM5118165J6 Abstract: No abstract text available Text: HM5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26,1996 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 \|im CMOS technology for high performance and low power. The H M 5118165 offers	OCR Scan	PDF	HM5118165 1048576-word 16-bit ADE-203-636B 576-word 16-bit. 42-pin 50-pin ns/60 HM5118165J6
ajw smd Abstract: SMD ajw Text: □ IXYS PRELIMINARY DATA SHEET 28N30 28N30S HiPerFAST IGBT Symbol Test C onditions V CES Td = 25°C to 150°C V CGR « M aximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v Transient ±30 V GEM ^C25 Tc = 25°C	OCR Scan	PDF	IXGH28N30 IXGH28N30S 13/10Nm/lb O-247 Conditi47 ajw smd SMD ajw
Untitled Abstract: No abstract text available Text: OIXYS PRELIMINARY DATA SHEET 28N30A 28N30AS HiPerFAST IGBT \ CES IC25 * CE sat typ. W) Symbol Test Conditions VCES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V *C25 Tc = 25° C	OCR Scan	PDF	IXGH28N30A IXGH28N30AS O-247 28N30AS)
SMD ajw Abstract: ajw smd ajw 35 Text: □ IXYS PRELIM IN ARY DATA SHEET 28N30A 28N30AS HiPerFAST IGBT Symbol Test Conditions V CES Td = 25°C to 150°C V CGR « Maximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C	OCR Scan	PDF	IXGH28N30A IXGH28N30AS 13/10Nm/lb O-247 SMD ajw ajw smd ajw 35
Untitled Abstract: No abstract text available Text: OIXYS PRELIMINARY DATA SHEET 28N30 28N30S HiPerFAST IGBT vCES ^C25 v* CE sat typ ^fi(typ) Symbol Test Conditions v CES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V VGES Continuous ±20 V VœM Transient ±30 V Tc = 25° C	OCR Scan	PDF	IXGH28N30 IXGH28N30S TQ-247 28N30S) O-247
Untitled Abstract: No abstract text available Text: O IX Y S PRELIMINARY DATA SHEET 28N30B 28N30BS HiPerFAST IGBT vCES ^C25 vCE sat typ *fl(typ) Symbol Test Conditions V CES T j = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V Tc = 25° C	OCR Scan	PDF	IXGH28N30B IXGH28N30BS O-247 28N30BS)

28N30 Search Results

28N30 Price and Stock

onsemi FDB28N30TM

Panasonic Electronic Components EXB-28N303JX

Panasonic Electronic Components EXB-28N300JX

SiTime Corporation SIT9365AI-1B2-28N30.720000

SiTime Corporation SIT9365AI-4E2-28N30.720000

28N30 Datasheets Context Search

Untitled

28N30

752 smd

28N30

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12n60c

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ad 161

200n60

7n60b

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28N30

7N60B

28N30B

28n30a

120n60b

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HM5118165J6

ajw smd

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SMD ajw

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