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    28SOJ Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: AMIC TECHNOLOGY Taiwan , INC. Spec. No. : 04-83-002 Update : 12/17/1999 Pages : 1 of 9 TAPE&REEL PACKING SPECIFICAITON 1. Packing Procedures 2. Carrier Tape Dimensions - 28SOP,26/28SOJ,28TSOP,32sTSOP 3. Carrier Tape Dimensions - 32/40/44SOP,32/40SOJ,32/44/50TSOP,100QFP


    Original     		PDF 28SOP 26/28SOJ 28TSOP 32sTSOP 32/40/44SOP 32/40SOJ 32/44/50TSOP 100QFP 36/48Mini-BGA

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    K6E0808C1C

    Abstract: K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C
    Text: PRELIMINARY K6E0808C1C-C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.


    Original     		PDF K6E0808C1C-C 32Kx8 12/15/20ns 8/10ns 8/10/10ns 7/10ns 28-TSOP1-0813 K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM K6E0808V1C-C Document Title 32Kx8 Bit High Speed Static RAM 3.3V Operating , Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Jun. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.


    Original     		PDF K6E0808V1C-C 32Kx8 28-TSOP1 28-TSOP1-0813

    Untitled

    Abstract: No abstract text available
    Text: K6E0804C1E-C CMOS SRAM Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating). Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Aug. 1. 1998 Preliminary Rev. 1.0 Release to Final Data Sheet. Nov. 2. 1998 Final Draft Data


    Original     		PDF K6E0804C1E-C 64Kx4 K6E0804C1E- 28-SOJ-300

    300b tube

    Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
    Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM


    Original     		PDF FBGA-11 24-SOJ-300 -SOJ-300 -TSOP2-300AF -SOJ-300B 28-SOJ-300 28-SOJ-300A 28-SOJ-400 300b tube 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    Untitled

    Abstract: No abstract text available
    Text: I ABOUT EXAR I PRODUCTS I INDEX I SALES INFORMATION I INFORMATION REQUEST I SEARCH I HELP I DS1/E1 Product Selector Guide DS1/E1 Products Line Interfaces Part Number # of Channels Data Rates Package s Clock Recovery Short/ Long Haul Temp Range Operating Power


    Original     		PDF XRT5793 XRT5794 XRT5894 XRT5897 XRT59L91 XRT5997 XRT7288 XRT81L27 XRT82D20 XRT82L24

    01-I04

    Abstract: KM641001A KM641001A-15 KM641001A-20
    Text: PRELIMINARY KM641001A CMOS SRAM 256K x 4 B it With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words


    OCR Scan     		PDF KM641001A KM641001A-15 KM641001A-17 KM641001A-20 KM641001AJ 28-SQJ-400 KM641001A 576-bit OOPm53 01-I04 KM641001A-15 KM641001A-20

    Untitled

    Abstract: No abstract text available
    Text: KM64B261A BiCMOS SRAM 65,536 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CM O S): 20mA (max.) • Operating Current : 160mA (f = 100 MHz.)


    OCR Scan     		PDF KM64B261A 160mA 28-SOJ-3QO KM64B261A 144-bit 200mV

    KM611001J

    Abstract: KM611001 KM611001-20 KM611001-25 KM611001-35
    Text: KM611001 CMOS SRAM 1M x lB it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20,25,35 ns Max. The KM611001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 1.048,576 words by 1 bits. • Low Power Dissipation


    OCR Scan     		PDF KM611001 KM611001-20 KM611001 KM611001-35 KM611001P: 28-D1P-400 KM611001J: 28-SOJ-4QO 576-bit KM611001J KM611001-20 KM611001-25 KM611001-35

    KM68257C

    Abstract: KM68257C-12 KM68257C-15 KM68257C-20 KM68257CJ
    Text: CMOS SRAM KM68257C 32,768 WORD x 8 B it High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max) Operating : K M68257C-12 : 165mA (max.) K M 68 257 C -15: 150mA (max.)


    OCR Scan     		PDF KM68257C KM68257C-12 165mA KM68257C-15 150mA KM68257C-20 140mA KM68257CP 28-DIP-300 KM68257CJ KM68257C KM68257C-12 KM68257CJ

    Untitled

    Abstract: No abstract text available
    Text: KM641001A CMOS SRAM 256K x 4 Bit With ÜE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation


    OCR Scan     		PDF KM641001A KM641001A 576-bit KM641001A-15 KM641001A-17 KM641001A-20

    KM641001

    Abstract: No abstract text available
    Text: KM641001 CMOS SRAM 256Kx 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(Max.) The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words


    OCR Scan     		PDF KM641001 256Kx KM641001 576-bit KM641001-20 KM641001-25: 130mA

    KM6865BP-20

    Abstract: KM6865BP-15
    Text: KM6865B CMOS SRAM 8 K x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12 ,15, 20,25ns Max. The KM865B is a 65,536-bit high-speed Static Random • Low Power D issipation Access Memory organized as 8,192 words by 8 bits.


    OCR Scan     		PDF KM6865B KM865B 536-bit KM6865B-12 KM6865B-15 KM6865B-25 KM6865BP-20 KM6865BP-15

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM641001A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Time 15,17,20 ns(Max.) The KM641001A is a 1,048,576-bit high-speed Static • Low Power Dissipation Standby (TTL) Random Access Memory organized as 262,144 words


    OCR Scan     		PDF KM641001A KM641001A 576-bit KM641001A-15 KM641001A-17 41001A-20

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM64258E CMOS SRAM Document Tills 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial draft Draft Data Aug. 1 .1 9 9 8 Remark Preliminary The attached data sheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right


    OCR Scan     		PDF KM64258E 64Kx4 28-SOJ-300

    Untitled

    Abstract: No abstract text available
    Text: KM68257C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial re le a s e w ith P re lim in a ry. A pr. 1st, 1994


    OCR Scan     		PDF KM68257C 32Kx8 28-SOJ-300 28-TSOP1-0813

    Untitled

    Abstract: No abstract text available
    Text: LH521002A CMOS 256K x 4 Static RAM • Low Power Standby when Deselected High frequency design techniques should be em­ ployed to obtain the best performance from this device. Solid, low impedance power and ground planes, with high frequency decoupling capacitors, are desirable. Series


    OCR Scan     		PDF LH521002A 28-pin, 400-mil 28SOJ SOJ28-P-400) LH521002A ---------------------------------28-pin,

    Untitled

    Abstract: No abstract text available
    Text: KM68257E, KM68257EI PRELIMINARY CMOS SRAM Document Title 32Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev.No. History Rev. 0.0 Initial D raft Draft Data A ug. 1 .1 9 9 8 Remark


    OCR Scan     		PDF KM68257E, KM68257EI 32Kx8 28-SOJ-300 28-TSOP1

    Untitled

    Abstract: No abstract text available
    Text: KM68257E, KM68257EI PRELIMINARY CMOS SRAM Document Title 32Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev.No. History Rev. 0.0 Initial Draft Draft Data Aug. 1 .1 9 9 8 Remark


    OCR Scan     		PDF KM68257E, KM68257EI 32Kx8 28-SOJ-300 28-TSOP1-0813

    Untitled

    Abstract: No abstract text available
    Text: KM68V257E/EL, KM68V257EI/ELI CMOS SRAM Document Title 32Kx8 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Aug. 1. 1998 Preliminary Rev. 1.0


    OCR Scan     		PDF KM68V257E/EL, KM68V257EI/ELI 32Kx8 28-SOJ-300 28-TSOP1

    BNK-17

    Abstract: No abstract text available
    Text: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85


    OCR Scan     		PDF LH5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN 24SOP 28SOJ 400mil) LH521002BK/BNK-17/L LH521002BK/BNK-20/L LH521002BK/BNK-2S/L LH521007AK-20 BNK-17

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L