Untitled
Abstract: No abstract text available
Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function
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78K0R/KE3
16-bit
PD78F1142
PD78F1143
PD78F1144
PD78F1145
PD78F1146
78K0R/KE3
U17854EJ6V0UD00
U17854EJ6V0UD
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48C20
Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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3608C
48C20
SA125
AT49BV640DT-70CU
AT49BV640D
AT49BV640DT
AT49BV640D-70CU
SWITCH SA125
278000 eprom
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SAMSUNG MCP
Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)
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KBB0xB400M
16Mx16)
4Mx16)
80-Ball
80x12
SAMSUNG MCP
ECH information
KBB0xB400M
BA102
ba4901
UtRAM Density
BA5101
samsung NAND memory
BGA180
ba30 transistor
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PDF
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CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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PDF
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M15451E
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can
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PD29F064115-X
64M-BIT
16-BIT
PD29F064115-X
M15451E
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PDF
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Untitled
Abstract: No abstract text available
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
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K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
08MAX
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PDF
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740-0007
Abstract: EN29GL064 6A000
Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and
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EN29GL064
8192K
4096K
16-bit)
740-0007
EN29GL064
6A000
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110R
Abstract: S29GL128N
Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this
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Am29LV6402M
S29GL128N
110R
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SA-275
Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document
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Am29PDL129H
S29PL129J
Am29PDL129J
SA-275
2aa 555
SA1127
SA1-108
SA1115
SA298
SA283
SA1117
PDL128G
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LH28F640BFHG-PBTL70A
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LH28F640BFHG-PBTL70A
64Mbit
4Mbitx16)
LHF64FH9)
FM045022A
LHF64FH9
LH28F640BFHG-PBTL70A
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LRS1830
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1830 Stacked Chip 256M x16 Boot Block Flash and 32M (x16) SCRAM (Model No.: LRS1830) Spec No.: EL14Z046 Issue Date: January 14, 2003 sharp L R S1 8 3 0 x Handle this document carefully for it contains material protected by international copyright law.
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LRS1830
LRS1830)
EL14Z046
LRS1830
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M29W640DB
Abstract: M29W640D M29W640DT A0-A21 6A000
Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns
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M29W640DT
M29W640DB
TSOP48
TFBGA63
M29W640DB
M29W640D
M29W640DT
A0-A21
6A000
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M420000000
Abstract: FSB073 3FE00
Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector
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Am42DL640AG
16-Bit)
73-Ball
5M-1994.
M420000000
FSB073
3FE00
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MBM29BS64LF
Abstract: MBM29BS64LF-18 MBM29BT64LF-18
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed
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DS05-20916-1E
MBM29BS/BT64LF-18/25
MBM29BS/BT64LF
60-ball
MBM29BS/
BT64LF-25
MBM29BT64LF-18
MBM29BS64LF-18
F0403
MBM29BS64LF
MBM29BS64LF-18
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LHF12F16
Abstract: wp 146 LH28F128BFHT-PTTL75A
Text: PRODUCT SPECIFICATION Integrated Circuits Group LH28F128BFHT-PTTL75A Flash Memory 128M 8Mb x 16 (Model Number: LHF12F16) Spec. Issue Date: June 7, 2004 Spec No: FM046010 LHF12F16 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LH28F128BFHT-PTTL75A
LHF12F16)
FM046010
LHF12F16
LHF12F16
wp 146
LH28F128BFHT-PTTL75A
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BGA-101P-M01
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM
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DS05-50208-2E
MB84LD23381EJ-10
101-ball
BGA-101P-M01
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BA102
Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.
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TH50VSF3680/3681AASB
TH50VSF3680/3681AASB
608-bit
864-bit
69-pin
3/3681AASB
XXXh/60h)
BPA/60h)
BA102
diode ba102
diode ba103
TH50VSF3680AASB
A12F
TH50VSF3681AASB
BA41
BA96
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MX29LV640D
Abstract: A0-A21 MX29LV640E Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX
Text: MX29LV640D T/B MX29LV640D T/B DATASHEET The MX29LV640D T/B product family is not recommended for new designs. The MX29LV640E T/B family is the recommended replacement. Please refer to MX29LV640E T/B datasheet for full specifications and ordering information, or contact your local sales
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MX29LV640D
MX29LV640E
MX29LV640E
PM1208
64M-BIT
A0-A21
Q0-Q15
MX29LV640DT
0001111XXX
MX29LV640DBTC-90G
1000010XXX
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MX29LV640ebt
Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132
Text: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable
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MX29LV640E
64M-BIT
128-word
MX29LV640ebt
MX29LV640EB
MX29LV640EBTI-70G
29LV640
mx29lv640etti
MX29LV640ETTI-70G
A0-A21
Q0-Q15
PM-132
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C000H-DFFFH
Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation
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MX29LW128T/B/U/D
128M-BIT
JAN/27/2003
MAR/28/2003
MAY/16/2003
MAY/29/2003
C000H-DFFFH
24Blocks
FB0000h-FBFFFFh
9F0000h-9FFFFFh
C10000h-C1FFFFh
FF4000h-FF5FFFh
8a0000h8affffh
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FTA073
Abstract: No abstract text available
Text: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am50DL128BH
FTA073--73-Ball
FTA073
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Untitled
Abstract: No abstract text available
Text: n S I ELECTRONICS INC 3SE J> S8 -2/90 EB SbSbMbb 00003=14 R BIMSI S TR IP LIN E PA C K A G ED SERIES 1S800 • 1S809 electronics. 2C800 - 2C809 H Y P E R A B R U P T T U N IN G D IO D E S With large values of capacitance tuning ratios and high Q, the 1S800 and 2C800
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1S800
1S809
2C800
2C809
1S800
2C800
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2C800
Abstract: stripline 2c806 2C809 2C805 1S800 1S801 1S809 2C802 2C DIODE
Text: M S I ELECTRONICS INC 35E D ES SbSbMbb 0 G 0 0 3 lìLl ì Mi M S I STRIPLINE PACKAGED electronics. HYPERABRUPT TU N IN G DIODES With large values of capacitance tuning ratios and high Q, the 1S800 and 2C800 series hyperabrupt diodes in stripline packages are especially suitable for
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1S800
1S809
2C800
2C809
1S800
environmenC808
2C809
stripline
2c806
2C805
1S801
2C802
2C DIODE
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