Contextual Info: TO SHIBA 2SB1381 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 381 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS HAM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 • High DC Current Gain : hpE = 1500 Min. ( V C E = —3V, I c = -2 .5 A )

2SB1381

Abstract: 2SD2079
Contextual Info: TO SH IBA 2SB1381 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 381 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS r • • • High DC Current Gain : hjrF, = 1500 Min. (VCE= —3V, IC= —2.5A) Low Saturation Voltage: V q ^ (sat)“ —1-5V(Max.) (Ic= —2.5A)

2SB1381

Abstract: 2SD2079
Contextual Info: SavantIC Semiconductor Product Specification 2SB1381 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2079 ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

2SD2079

Abstract: 2SB1381
Contextual Info: JMnic Product Specification 2SB1381 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2079 ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications

Contextual Info: 2SB1381 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 381 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS HAM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS Î.2 ± 0.2 10 ±0.3 • High DC Current Gain : hpE = 1500 Min. ( V C E = —3V, I c = -2 .5 A )

2SB1381

Abstract: 2SD2079
Contextual Info: SavantIC Semiconductor Product Specification 2SD2079 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1381 APPLICATIONS ·High power switching applications

B1381

Abstract: 2SB1381 2SD2079
Contextual Info: 2SB1381 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1381 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 1500 min (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)

2SB1381

Contextual Info: 2SB1381 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1381 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 1500 min (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)

DARLINGTON 3A 100V npn

Abstract: 2SB1381 2SD2079
Contextual Info: Inchange Semiconductor Product Specification 2SD2079 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SB1381 APPLICATIONS ・High power switching applications

Contextual Info: 2SB1381 SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, °ULSE MOTOR DRIVE APPLICATIONS. Unit in mm . High DC Current Gain : hFE=1500 Min. (Vc e =-3V, Ic =-2.5A) . Low Saturation Voltage : VcE(sat)=-1.5V(Max.)(Ic=-2.5A) . Complementary to 2SD2079.

Contextual Info: TOSHIBA 2SB1381 Transistor Unit in mm 1 0 ± 0.3 M Silicon PNP Triple Diffused Type 0 3-.2 ±o .2 2.7 ± 0.2 High Power, Hammer Drive, «1 ö Pulse Motor Drive Applications ‘ -H Features • High DC Current Gain 1.1 - hFE = 1500 Min. (VCE = -3V, lc = -2.5A)

2SB1381

Abstract: 2SD2079
Contextual Info: Inchange Semiconductor Product Specification 2SB1381 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2079 ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・High power switching applications

2SB1381

Abstract: 2SD2079 3AX3
Contextual Info: T O S H IB A 2SB1381 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 381 HIGH POWER SW ITCHING APPLICATIONS U nit in mm H A M M E R DRIVE, PULSE M O TO R DRIVE APPLICATIONS 10 ± 0 .3 r ^ 3 .2 ± 0 .2 2.7±Q 2 2 '^ " 0 <v> • High DC Current Gain : hjpg = 1500 Min.

Contextual Info: 2SB1381 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1381 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 1500 min (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)

Contextual Info: TOSHIBA 2SB1381 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 3 81 HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS Unit in mm 10 + 0.3 • , f 3.2 ± 0 . 2 2.7±02 High DC Current Gain : h p g - 1500 Min. (VCE = - 3 V , IC=-2 .5A)

Contextual Info: TO SHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 3 8 I HIGH PO W ER SW ITCH IN G APPLICATIONS. U n it in mm H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. # 3 -2 ±0 .2 • w - High DC C urren t Gain : hpE = 1500 Min. (Vc e = - 3V, I c = - 2 .5 A ) • Low S aturation Voltage : V C E (sat)= —1.5V (Max.) ( I c = —2.5A)

D2079

Abstract: 2SD2079 2SB1381
Contextual Info: 2SD2079 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2079 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE (1) = 2000 (min) • Low saturation voltage: VCE (sat) (1) = 1.5 V (max)

2SD2079

Abstract: 2SB1381
Contextual Info: T O S H IB A 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 r ^3.2 ±0.2 2.7±Q 2 <v> High DC Current Gain cn CO O o : h p E (:L) = 2000 (Min.)

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

OC139

Contextual Info: TOSHIBA 2SD2079 Field Effect Transistor Unit in mm 03.2 ±0.2 10 ± 0.3 Silicon NPN Triple Diffused Type 2.7±0.2 - - 1 / - -O 00 Hammer Drive and Pulse Motor Drive Applications o> ñ 15 ± 0 . 3 kcY High Power Switching Applications,

2n 3904 411

Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
Contextual Info: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13