Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD2079 Search Results

    SF Impression Pixel

    2SD2079 Price and Stock

    Toshiba America Electronic Components 2SD2079,Q(J

    Bipolar Transistor (BJT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop 2SD2079,Q(J 1,620
    • 1 -
    • 10 -
    • 100 $4.68
    • 1000 $4.45
    • 10000 $4.45
    		Buy Now

    2SD2079 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2079 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2079 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2079 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2079 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2079 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD2079 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2079 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2079 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2079 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2079 Toshiba TRANS DARLINGTON NPN 100V 5A 3(2-10R1A) Scan PDF
    2SD2079 Toshiba Silicon NPN transistor for high power switching applications, hammer drive and pulse motor drive applications Scan PDF
    2SD2079 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) Scan PDF

    2SD2079 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D2079

    Abstract: 2SD2079 2SB1381
    Text: 2SD2079 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2079 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE (1) = 2000 (min) • Low saturation voltage: VCE (sat) (1) = 1.5 V (max)


    Original     		PDF 2SD2079 2SB1381. D2079 2SD2079 2SB1381

    2SB1381

    Abstract: 2SD2079
    Text: SavantIC Semiconductor Product Specification 2SB1381 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2079 ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications


    Original     		PDF 2SB1381 O-220F 2SD2079 O-220F) -20mA -100V; 2SB1381 2SD2079

    2SD2079

    Abstract: 2SB1381
    Text: JMnic Product Specification 2SB1381 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2079 ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications


    Original     		PDF 2SB1381 O-220F 2SD2079 O-220F) -20mA -100V; 2SD2079 2SB1381

    2SB1381

    Abstract: 2SD2079
    Text: SavantIC Semiconductor Product Specification 2SD2079 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1381 APPLICATIONS ·High power switching applications


    Original     		PDF 2SD2079 O-220F 2SB1381 O-220F) VCCA30V 2SB1381 2SD2079

    Untitled

    Abstract: No abstract text available
    Text: 2SD2079 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2079 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE (1) = 2000 (min) • Low saturation voltage: VCE (sat) (1) = 1.5 V (max)


    Original     		PDF 2SD2079 2SB1381. SC-67 2-10R1A

    DARLINGTON 3A 100V npn

    Abstract: 2SB1381 2SD2079
    Text: Inchange Semiconductor Product Specification 2SD2079 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SB1381 APPLICATIONS ・High power switching applications


    Original     		PDF 2SD2079 O-220F 2SB1381 O-220F) VCC30V DARLINGTON 3A 100V npn 2SB1381 2SD2079

    D2079

    Abstract: 2SD2079 2SB1381
    Text: 2SD2079 東芝トランジスタ シリコンNPN三重拡散形 2SD2079 ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 2000 最小 (VCE = 3 V, IC = 3 A)


    Original     		PDF 2SD2079 2SB1381 SC-67 2-10R1A 20070701-JA D2079 2SD2079 2SB1381

    D2079

    Abstract: 2SB1381 2SD2079
    Text: 2SD2079 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2079 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE (1) = 2000 (min) • Low saturation voltage: VCE (sat) (1) = 1.5 V (max)


    Original     		PDF 2SD2079 2SB1381. D2079 2SB1381 2SD2079

    2SB1381

    Abstract: 2SD2079
    Text: Inchange Semiconductor Product Specification 2SB1381 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2079 ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・High power switching applications


    Original     		PDF 2SB1381 O-220F 2SD2079 O-220F) -100V; 2SB1381 2SD2079

    Untitled

    Abstract: No abstract text available
    Text: 2SD2079 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2079 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE (1) = 2000 (min) • Low saturation voltage: VCE (sat) (1) = 1.5 V (max)


    Original     		PDF 2SD2079 2SB1381.

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)


    OCR Scan     		PDF 2SD2079 2SB1381. MAX30

    2SD2079

    Abstract: 2SB1381
    Text: T O S H IB A 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 r ^3.2 ±0.2 2.7±Q 2 <v> High DC Current Gain cn CO O o : h p E (:L) = 2000 (Min.)


    OCR Scan     		PDF 2SD2079 2SB1381. 2SD2079 2SB1381

    OC139

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2079 Field Effect Transistor Unit in mm 03.2 ±0.2 10 ± 0.3 Silicon NPN Triple Diffused Type 2.7±0.2 - - 1 / - -O 00 Hammer Drive and Pulse Motor Drive Applications o> ñ 15 ± 0 . 3 kcY High Power Switching Applications,


    OCR Scan     		PDF 2SD2079 2SB1381 OC139

    A1046

    Abstract: h10u BA 7515
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2079 HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. . High DC Current Gain Unit in 10±0.3 : hFE= 2000 Min. (Vc e =3V, Ic =3A) 03.2 ±0.2 s . Low Saturation Voltage: Vc£(sat)=1.5V(Max.)(Ic “3A)


    OCR Scan     		PDF 2SD2079 2SB1381. A1046 h10u BA 7515

    2SB1381

    Abstract: 2SD2079
    Text: TO SH IBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 HIGH POWER SWITCHING APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7±Q 2 r CO High DC Current Gain cn ro o : ^FE ( 1) = 2000 (Min.)


    OCR Scan     		PDF 2SD2079 2SB1381. 10truments, 2SB1381 2SD2079

    Untitled

    Abstract: No abstract text available
    Text: 2SB1381 SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, °ULSE MOTOR DRIVE APPLICATIONS. Unit in mm . High DC Current Gain : hFE=1500 Min. (Vc e =-3V, Ic =-2.5A) . Low Saturation Voltage : VcE(sat)=-1.5V(Max.)(Ic=-2.5A) . Complementary to 2SD2079.


    OCR Scan     		PDF 2SB1381 2SD2079.

    Untitled

    Abstract: No abstract text available
    Text: SILICO N NPN T R IP LE DIFFU SED T Y P E 2SD2079 DARLINGTON POWER HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. . High DC Current Gain U n it 1 0 ± 0 .3 : hFE=2000(Min.)(Vce=3V, Ic=3A) 0 3 .2 ± 0 .2 in mm 2.7 ± 0 .2


    OCR Scan     		PDF 2SD2079 2SB1381.

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)


    OCR Scan     		PDF 2SD2079 2SB1381.

    2SB1381

    Abstract: 2SD2079
    Text: TO SH IBA 2SD2079 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm H A M M ER DRIVE, PULSE M OTOR DRIVE APPLICATIONS. 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7±Q 2 r CO High DC Current Gain cn ro


    OCR Scan     		PDF 2SD2079 2SB1381. 710truments, 2SB1381 2SD2079

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 3 8 I HIGH PO W ER SW ITCH IN G APPLICATIONS. U n it in mm H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. # 3 -2 ±0 .2 • w - High DC C urren t Gain : hpE = 1500 Min. (Vc e = - 3V, I c = - 2 .5 A ) • Low S aturation Voltage : V C E (sat)= —1.5V (Max.) ( I c = —2.5A)


    OCR Scan     		PDF 2SB1381 2SD2079.

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SB1381 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 381 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS HAM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 • High DC Current Gain : hpE = 1500 Min. ( V C E = —3V, I c = -2 .5 A )


    OCR Scan     		PDF 2SB1381 2SD2079.

    2SB1381

    Abstract: 2SD2079
    Text: TO SH IBA 2SB1381 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 381 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS r • • • High DC Current Gain : hjrF, = 1500 Min. (VCE= —3V, IC= —2.5A) Low Saturation Voltage: V q ^ (sat)“ —1-5V(Max.) (Ic= —2.5A)


    OCR Scan     		PDF 2SB1381 2SD2079. 2SB1381 2SD2079