2SB1381
Abstract: 2SD2079
Text: SavantIC Semiconductor Product Specification 2SB1381 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2079 ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications
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2SB1381
O-220F
2SD2079
O-220F)
-20mA
-100V;
2SB1381
2SD2079
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2SD2079
Abstract: 2SB1381
Text: JMnic Product Specification 2SB1381 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2079 ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications
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2SB1381
O-220F
2SD2079
O-220F)
-20mA
-100V;
2SD2079
2SB1381
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2SB1381
Abstract: 2SD2079
Text: SavantIC Semiconductor Product Specification 2SD2079 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1381 APPLICATIONS ·High power switching applications
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2SD2079
O-220F
2SB1381
O-220F)
VCCA30V
2SB1381
2SD2079
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B1381
Abstract: 2SB1381 2SD2079
Text: 2SB1381 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1381 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 1500 min (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)
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2SB1381
2SD2079.
B1381
2SB1381
2SD2079
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2SB1381
Abstract: No abstract text available
Text: 2SB1381 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1381 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 1500 min (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)
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2SB1381
2SD2079.
2SB1381
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DARLINGTON 3A 100V npn
Abstract: 2SB1381 2SD2079
Text: Inchange Semiconductor Product Specification 2SD2079 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SB1381 APPLICATIONS ・High power switching applications
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2SD2079
O-220F
2SB1381
O-220F)
VCC30V
DARLINGTON 3A 100V npn
2SB1381
2SD2079
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2SB1381
Abstract: 2SD2079
Text: Inchange Semiconductor Product Specification 2SB1381 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2079 ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・High power switching applications
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2SB1381
O-220F
2SD2079
O-220F)
-100V;
2SB1381
2SD2079
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Untitled
Abstract: No abstract text available
Text: 2SB1381 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1381 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 1500 min (VCE = −3 V, IC = −2.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)
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2SB1381
2SD2079.
SC-67
2-10R1A
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D2079
Abstract: 2SD2079 2SB1381
Text: 2SD2079 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2079 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE (1) = 2000 (min) • Low saturation voltage: VCE (sat) (1) = 1.5 V (max)
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2SD2079
2SB1381.
D2079
2SD2079
2SB1381
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SB1381 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 381 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS HAM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 • High DC Current Gain : hpE = 1500 Min. ( V C E = —3V, I c = -2 .5 A )
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2SB1381
2SD2079.
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2SB1381
Abstract: 2SD2079
Text: TO SH IBA 2SB1381 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 381 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS r • • • High DC Current Gain : hjrF, = 1500 Min. (VCE= —3V, IC= —2.5A) Low Saturation Voltage: V q ^ (sat)“ —1-5V(Max.) (Ic= —2.5A)
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2SB1381
2SD2079.
2SB1381
2SD2079
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Untitled
Abstract: No abstract text available
Text: 2SB1381 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 381 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS HAM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS Î.2 ± 0.2 10 ±0.3 • High DC Current Gain : hpE = 1500 Min. ( V C E = —3V, I c = -2 .5 A )
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2SB1381
2SD2079.
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Untitled
Abstract: No abstract text available
Text: 2SB1381 SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, °ULSE MOTOR DRIVE APPLICATIONS. Unit in mm . High DC Current Gain : hFE=1500 Min. (Vc e =-3V, Ic =-2.5A) . Low Saturation Voltage : VcE(sat)=-1.5V(Max.)(Ic=-2.5A) . Complementary to 2SD2079.
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2SB1381
2SD2079.
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SB1381 Transistor Unit in mm 1 0 ± 0.3 M Silicon PNP Triple Diffused Type 0 3-.2 ±o .2 2.7 ± 0.2 High Power, Hammer Drive, «1 ö Pulse Motor Drive Applications ‘ -H Features • High DC Current Gain 1.1 - hFE = 1500 Min. (VCE = -3V, lc = -2.5A)
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2SB1381
2SD2079
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2SB1381
Abstract: 2SD2079
Text: TO SH IBA 2SB1381 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 381 HIGH POWER SWITCHING APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7±Q 2 r CO • High DC Current Gain : hjpg = 1500 Min.
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2SB1381
2SD2079.
2SB1381
2SD2079
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SB1381 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 3 81 HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS Unit in mm 10 + 0.3 • , f 3.2 ± 0 . 2 2.7±02 High DC Current Gain : h p g - 1500 Min. (VCE = - 3 V , IC=-2 .5A)
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2SB1381
2SD2079.
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)
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2SD2079
2SB1381.
MAX30
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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O-126
O-126
T0-220AB,
O-220
2SC4544
2SC4448
2SC3612
2BC4201
Transistor 2SA 2SB 2SC 2SD
S-AU27M
S2000A inverter
P4005
S-AV21H
S-AU27
3182N
2sb 834 transistor
Transistor 2SC4288A
Drive IC 2SC3346
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Untitled
Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 3 8 I HIGH PO W ER SW ITCH IN G APPLICATIONS. U n it in mm H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. # 3 -2 ±0 .2 • w - High DC C urren t Gain : hpE = 1500 Min. (Vc e = - 3V, I c = - 2 .5 A ) • Low S aturation Voltage : V C E (sat)= —1.5V (Max.) ( I c = —2.5A)
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2SB1381
2SD2079.
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2SD2079
Abstract: 2SB1381
Text: T O S H IB A 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 r ^3.2 ±0.2 2.7±Q 2 <v> High DC Current Gain cn CO O o : h p E (:L) = 2000 (Min.)
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2SD2079
2SB1381.
2SD2079
2SB1381
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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OC139
Abstract: No abstract text available
Text: TOSHIBA 2SD2079 Field Effect Transistor Unit in mm 03.2 ±0.2 10 ± 0.3 Silicon NPN Triple Diffused Type 2.7±0.2 - - 1 / - -O 00 Hammer Drive and Pulse Motor Drive Applications o> ñ 15 ± 0 . 3 kcY High Power Switching Applications,
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2SD2079
2SB1381
OC139
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2n 3904 411
Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
Text: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13
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1SV237
1SV239.
1SV257
TA4100F.
YTS2222.
YTS2222A.
YTS2907.
YTS2907A.
YTS3904.
YTS3906.
2n 3904 411
2SB 407
2SK176
Toshiba 2SC3281
K 1113
2sk toshiba
TA4100F
TOSHIBA 2N
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