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Toshiba America Electronic Components 2SD1407A-Y(F) TRANS NPN 100V 5A TO-220NIS
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2SD1407 Datasheets (26)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD1407	Various Russian Datasheets	Transistor	Original	PDF
2SD1407	Wing Shing Computer Components	PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)	Original	PDF
2SD1407	Wing Shing Computer Components	PNP EPITAXIAL SILICON TRANSISTOR	Original	PDF
2SD1407	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SD1407	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD1407	Unknown	Cross Reference Datasheet	Scan	PDF
2SD1407	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD1407	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD1407	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SD1407	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SD1407	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD1407	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD1407	Toshiba	TO-220 Package Transistors	Scan	PDF
2SD1407A	Toshiba	Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: Low-Frequency Power Transistor; Part Number: 2SB1016A	Original	PDF

2SD1407A	Toshiba	Silicon NPN triple diffused type transistor for power amplifier applications	Scan	PDF
2SD1407A	Toshiba		Scan	PDF
2SD1407A	Toshiba	TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE	Scan	PDF
2SD1407A-O	Toshiba	2SD1407 - TRANSISTOR 5 A, 100 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power	Original	PDF
2SD1407A-O(F)	Toshiba	2SD1407A - TRANS NPN 100V 5A 2-10R1A	Original	PDF
2SD1407A-R	Toshiba	2SD1407 - TRANSISTOR 5 A, 100 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power	Original	PDF

2SD1407 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SD1407 Abstract: 2SB1016 Text: 2SB1016 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SD1407 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)	Original	2SB1016 SC-67 2SD1407 -150V 2SD1407 2SB1016	PDF
2SB1016 Abstract: 2SD1407 2SB-1016 Text: SavantIC Semiconductor Product Specification 2SB1016 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SD1407 APPLICATIONS ·Power amplifier applications PINNING	Original	2SB1016 O-220Fa 2SD1407 2SB1016 2SD1407 2SB-1016	PDF
B1016A Abstract: No abstract text available Text: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C)	Original	2SB1016A 2SD1407A 2-10R1A B1016A	PDF
2SD1407 Abstract: 2SB1016 Text: Inchange Semiconductor Product Specification 2SD1407 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Low collector saturation voltage ・Complement to type 2SB1016 APPLICATIONS ・Power amplifier applications	Original	2SD1407 O-220Fa 2SB1016 O-220Fa) 2SD1407 2SB1016	PDF
D1407 Abstract: No abstract text available Text: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A	Original	2SD1407A 2SB1016A 2-10R1A D1407	PDF
2SD1407 Abstract: 2SB1016 low Vce sat PNP Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1016 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0 V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1407 APPLICATIONS ·Designed for audio frequency power amplifier applications.	Original	2SB1016 2SD1407 -100V; 2SD1407 2SB1016 low Vce sat PNP	PDF
D1407A Abstract: D1407 2SD1407A 2SB1016A Text: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A	Original	2SD1407A 2SB1016A D1407A D1407 2SD1407A 2SB1016A	PDF
D1407 Abstract: D1407A 2SB1016A 2SD1407A Text: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A	Original	2SD1407A 2SB1016A D1407 D1407A 2SB1016A 2SD1407A	PDF
D1407A Abstract: D1407 2SD1407A 2SB1016A Text: 2SD1407A 東芝トランジスタシリコンNPN三重拡散 2SD1407A 通信工業用 ○ 電力増幅用 • 単位: mm : VCEO = 100 V 高耐圧です。 • 飽和電圧が小さい。 : VCE sat = 2.0 V (最大) • 2SB1016A とコンプリメンタリになります。	Original	2SD1407A 2SB1016A 2-10R1A D1407A D1407 2SD1407A 2SB1016A	PDF
2SD1407 Abstract: 2SB1016 Text: SavantIC Semiconductor Product Specification 2SD1407 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SB1016 APPLICATIONS ·Power amplifier applications PINNING	Original	2SD1407 O-220Fa 2SB1016 O-220Fa) 2SD1407 2SB1016	PDF
2SB1016 Abstract: 2SD1407 2sb101 Text: Inchange Semiconductor Product Specification 2SB1016 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Low collector saturation voltage ・Complement to type 2SD1407 APPLICATIONS ・Power amplifier applications	Original	2SB1016 O-220Fa 2SD1407 2SB1016 2SD1407 2sb101	PDF
2SD1407 Abstract: 2SB1016 pnp hfe 120-240 Text: JMnic Product Specification 2SB1016 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Low collector saturation voltage ・Complement to type 2SD1407 APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION	Original	2SB1016 O-220Fa 2SD1407 15llector -100V; 2SD1407 2SB1016 pnp hfe 120-240	PDF
B1016A Abstract: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SD1407A Text: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Maximum Ratings (Tc = 25°C)	Original	2SB1016A 2SD1407A B1016A 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SD1407A	PDF
2SB1016A Abstract: 2SD1407A B1016A Text: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications • Unit: mm High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C)	Original	2SB1016A 2SD1407A 2SB1016A 2SD1407A B1016A	PDF

2SB1016 Abstract: 1C13MAX Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1016 POWER AMPLIFIER APPLICATIONS. Unit in mm 1C13MAX. 0z.2±az FEATURES: . High Breakdown Voltage : V -.gQ=-100V :i2 . Low Collector-Emitter Saturation Voltage : ^CE(sat =-2 .OV(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fidelity Audio Frequency	OCR Scan	2SB1016 1C13MAX. -100V 2SD1407 Q76-CU5 -50mA, 2SB1016 1C13MAX	PDF
2SD1407 Abstract: 2SB1016A toshiba 2sd1407 2SD1407A Text: TOSHIBA 2SB1016A TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A Unit in mm High Breakdown Voltage : V q e O = —100V Low Collector-Emitter Saturation Voltage : VCE s a t = -2-0V (Max.) Complementary to 2SD1407A	OCR Scan	2SB1016A --100V 2SD1407A 2SD1407 2SB1016A toshiba 2sd1407	PDF
2SB1016A Abstract: 2SD1407A Text: TO SHIBA 2SD1407A 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PO W ER AM PLIFIER APPLICATIONS • • • High Breakdown Voltage : VCEO“ 100V Low Collector Saturation Voltage : V qe sat = 2.0V (Max.) Complementary to 2SB1016A r 2 '^ "<v>0	OCR Scan	2SD1407A 2SB1016A 2SB1016A 2SD1407A	PDF
toshiba 2sd1407a Abstract: 2SB1016A 2SD1407A Text: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A	OCR Scan	2SD1407A 2SB1016A toshiba 2sd1407a 2SB1016A 2SD1407A	PDF
Untitled Abstract: No abstract text available Text: 2SD1407A TO SHIBA 2SD1407A TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AM PLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V q e q = 100V Low Collector Saturation Voltage : V ^ g s a t ~ 2.0V (Max.)	OCR Scan	2SD1407A 2SB1016A	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE AÍ17A PO W ER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS High. Breakdown Voltage : V£ e o = 100V Low Collector Saturation Voltage : V q e gat = 2.0V (Max.) Complementary to 2SB1016A	OCR Scan	2SD1407A 2SB1016A 10hts	PDF
2SB1016A Abstract: toshiba 2sd1407 2SD1407A Text: 2SB1016A TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A POWER AMPLIFIER APPLICATIONS Unit in mm • High Breakdown Voltage : V q e O = —100V • Low Colleetor-Emitter Saturation Voltage : VCE sat = —2.0V (Max.) • Complementary to 2SD1407A	OCR Scan	2SB1016A --100V 2SD1407A 2SB1016A toshiba 2sd1407 2SD1407A	PDF
ic 746 Abstract: 2sd1407 Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407 POWER AMPLIFIER APPLICATIONS. FEATURES: . High Breakdown Voltage : . Low Collector Saturation Voltage : VcE sat =2.OV(Max.) . Complementary to 2SB1016 . Recommended for 30W High Fidelity Audio Frequency Amplifier Output Stage.	OCR Scan	2SD1407 2SB1016 ic 746 2sd1407	PDF
2SB1016A Abstract: 2SD1407A Text: 2SD1407A TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A	OCR Scan	2SD1407A 2SB1016A 2SB1016A 2SD1407A	PDF
2SC4290A Abstract: C 4927 2SD2356 2SC4289 2SD1407 4894 4902 2SC3997 2SC4289A 2SC4911K Text: - 202 - S € Type No. 4t £ Manuf. -M H SANYO B TOSHIBA m NEC B AL HITACHI « ± a F U JIT S U fâ T MATSUSHITA 2SC3052 2SC 4894 të T 2SC4453 2SC343Î 2SC 4895 □—A 2SD1828 2SD1407 2SC 4896 S tL 2SC 4897 B tL 2SC3997 2SC4290A 2SC 4898 fâ T 2SC3750 2SC3310	OCR Scan	2SC4453 2SC343Ã 2SC3052 2SC4911K 2SD1828 2SD1407 2SD2161 2SD2113 2SD1633 2SC4289A 2SC4290A C 4927 2SD2356 2SC4289 4894 4902 2SC3997 2SC4289A 2SC4911K	PDF

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2SD1407 Search Results

2SD1407 Price and Stock

Toshiba America Electronic Components 2SD1407A-Y(F)

2SD1407 Datasheets (26)

2SD1407 Datasheets Context Search

2SD1407

2SB1016

B1016A

2SD1407

D1407

2SD1407

D1407A

D1407

D1407A

2SD1407

2SB1016

2SD1407

B1016A

2SB1016A

2SB1016

2SD1407

2SB1016A

toshiba 2sd1407a

Untitled

Untitled

2SB1016A

ic 746

2SB1016A

2SC4290A