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    2SD826 Search Results

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    2SD826 Price and Stock

    Rochester Electronics LLC 2SD826G

    SMALL SIGNAL BIPOLAR TRANSTR NPN
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    DigiKey 2SD826G Bulk 27,775 1,110
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    Others 2SD826

    Bipolar Junction Transistor, NPN Type, TO-126
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    Quest Components 2SD826 10
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    onsemi 2SD826G

    2SD826 - Small Signal Bipolar Transistor, 5A, 20V, NPN, TO-126 '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SD826G 27,775 1
    • 1 $0.26
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    2SD826 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD826 Sanyo Semiconductor High-current switch Original PDF
    2SD826 Various Russian Datasheets Transistor Original PDF
    2SD826 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD826 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD826 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD826 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD826 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD826 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD826 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD826 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SD826E Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD826F Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD826F Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor 3V, 6V Strobe Apps Scan PDF
    2SD826G Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SD826 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD826

    Abstract: 2SD82
    Text: Inchange Semiconductor Product Specification 2SD826 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain ・Large current capacity APPLICATIONS ・For 3V, 6V strobe applications PINNING


    Original
    PDF 2SD826 O-126 2SD826 2SD82

    EE16

    Abstract: 5A transistor 2SD826 DC-DC EE13 ITR09924 core EE16 60309E EE16 9V transistor C 5386 EE16 case
    Text: 2SD826 Ordering number : EN538F SANYO Semiconductors DATA SHEET 2SD826 NPN Epitaxial Planar Silicon Transistor 20V / 5A, Transistor for Flash Circuit Features • • • Low saturation voltage. High hFE. Large current capacity. Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF 2SD826 EN538F 100ms, 150se. EE16 5A transistor 2SD826 DC-DC EE13 ITR09924 core EE16 60309E EE16 9V transistor C 5386 EE16 case

    2SD826

    Abstract: EE13 EE16 2sD826 transistor
    Text: Ordering number:EN538E NPN Epitaxial Planar Silicon Transistor 2SD826 20V/5A Switching Applications Features Package Dimensions • Low saturation voltage. · High hFE. · Large current capacity. unit:mm 2009A [2SD826] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6 0.8


    Original
    PDF EN538E 2SD826 2SD826] O-126 2SD826 EE13 EE16 2sD826 transistor

    2SD826

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD826 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Low collector saturation voltage ·High DC current gain ·Large current capacity APPLICATIONS ·For 3V, 6V strobe applications PINNING PIN


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    PDF 2SD826 O-126 2SD826

    EE16

    Abstract: sanyo ni-cd ee-16 core EE16 pulse trans EE16 9V EE16 4 3 EE16 5V
    Text: Ordering number:ENN538E NPN Epitaxial Planar Silicon Transistor 2SD826 20V/5A Switching Applications Features Package Dimensions • Low saturation voltage. · High hFE. · Large current capacity. unit:mm 2009B [2SD826] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6


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    PDF ENN538E 2SD826 2009B 2SD826] 100ms, O-126 150ctric EE16 sanyo ni-cd ee-16 core EE16 pulse trans EE16 9V EE16 4 3 EE16 5V

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2sc5694

    Abstract: TO-126LP 2sd1683 2SC5607 2sa1770 2SA2023 2SA2203 sanyo, 2sa2039 2sa2039 2SC5707
    Text: Low-Saturation Voltage Transistors Shortform Table Lead Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ Packages Quick selection guide Road Map Application Example Lineup according to packages SPA NP NMP MP TP FLP


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    PDF O-126 O-126ML O-126LP 2SB1165 2SD1722 2SB1166 2SD1723 2SB1167 2sc5694 TO-126LP 2sd1683 2SC5607 2sa1770 2SA2023 2SA2203 sanyo, 2sa2039 2sa2039 2SC5707

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original
    PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    TL 2262

    Abstract: 2SC2279 te 2304 2257A 2SC2050 2SC2371 2SC2611 2SD467 2sc710 2SC1815
    Text: - J tt tö T fö T M anuf. € = W SANYO 2SC3416 • y'V irV y-yj-y ■y-ytry te T jä T 0 tL 0 tL S 2: 2SC1570 2SD400 2SD826 = # 0 V h a n s B m B ^ 0 tL K $ 2SC2274 2SC1755 2SC1755 CII m s s T ype No. 2SC 2257A 2SC 2258 2SC 2260 J 2SC 2261 ✓ 2SC 226 2 —2SC 2263


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    PDF 2SC3416 2SC2376 2SC2682 2SC3272 2SC2371 2SC2611 2SC3271 2SD551 2SD1110 TL 2262 2SC2279 te 2304 2257A 2SC2050 2SC2611 2SD467 2sc710 2SC1815

    Untitled

    Abstract: No abstract text available
    Text: O rdering num ber: EN538E 2SD826 NPN Epitaxial Planar Silicon Transistor SANYO 20V/5A Switching Applications Features . Low saturation voltage. . High hFE. . Large current capacity. Absolute Maxi m m Ratings at Ta=25°C Collector-to-Base Voltage CBO Collector-to-Emitter Voltage vCEO


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    PDF EN538E 2SD826 100ms, H707L, 0RA03E 2SD826 1390T

    5277K1

    Abstract: 2SD826 EE-16 core ee16 lnk EN538E
    Text: Ordering number: EN538E 2SD826 N0.538E NPN Epitaxial Planar Type S i l i c o n Transistor 3V, 6V S t r o b e A p p l i c a t i o n s Features . Low saturation voltage. . High hFE, . Large current capacity. Absolute Maximum Katings at Ta=25°C Collector-to-Base Voltage


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    PDF EN538E 2SD826 100ms, 5277K1 2SD826 EE-16 core ee16 lnk EN538E

    2SB1205

    Abstract: 2SB1143 2sc4675
    Text: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.


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    PDF 2SB764/2SD863 2SB892/2SD1207* 2SB927/2SD1247* 2SB985/2SD1347* 2SB1131* 2SD1145 2SA1641/2SC4306* 2SB1201/2SD1801* 2SB1202/2SD1802* 2SB1203/2SD1803* 2SB1205 2SB1143 2sc4675

    transistor 2SB1142

    Abstract: sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788
    Text: SA0YO M IC A LE SS T 0-126M L T R A N SIST O R S F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting ♦ Plastic-covered heat sink facilitating high-density mounting ♦ Increased collector dissipation when a transistor alone is operated


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    PDF 0-126M T0-126ML) T0-126ML O-126 MT950123TR transistor 2SB1142 sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788

    2SB1267

    Abstract: No abstract text available
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta = 25 "C VCB(sat) max @ 1C •IB Applications VCBO (V) VCEO to (V) (A) PC (W ) (2 ) VCE(sat) fr @ Vce hre @ V C E lC max (mV) 1C (A) (mA) te hFE XSF


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    PDF 2SC4727 2SC4728 2SC4729 2SD1235 T0220 2SDI236L 2SD1237L 2SA1469 2SB1267

    2SB1205

    Abstract: 2SD1801
    Text: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.


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    PDF T0-126LP MT95C123TR 2SB1205 2SD1801

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2sD1915

    Abstract: 2912 nec NEC 2905 2sc3358 nec 2910 2SC2694 2SC3240 2SC2960 2SC3069 2SC343
    Text: - m % Type No. 2SC 287 1 L 2SC 2871S 2SC 2872 ^ 2SC 2873 2SC 2875 2SC 2876 2SC 2877 _ 2SC 2878 2SC 2879 2SC 2880 ^ 2SC 2881 2SC 2882 ^ 2SC 2883 2SC 2884 2SC 2885 ^ 2SC 2891 2SC 2900 - r ' 2SC 2901 ^ 2SC 2905 2SC 2905A 2SC 2907 ' 2 SC 2908 2SC 2909 — 2SC 2910 f


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    PDF 2SC4500L 2SD1759 2SC4500S 2SD863 2SC2001 2SD592 2SC3580 2SD1623 2SC4357 2sD1915 2912 nec NEC 2905 2sc3358 nec 2910 2SC2694 2SC3240 2SC2960 2SC3069 2SC343

    2SB1205

    Abstract: 2S81119 2Sk222 2sa128
    Text: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf


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    PDF TQ220ML T0220ML T03PB 2SB1205 2S81119 2Sk222 2sa128

    2SD818

    Abstract: 2SD844 fst 240 2sb764 2SD859 2SD811 2SD812 2SD813 2SD814 2SD814A
    Text: - 226 - T a = 2 5 eC . * E P ( ä T c = 2 5 ‘ C »CBO m Ic(DC) Pc Pc* (A) (W) (W) (V) tt (UA) (T a = 2 5 t : ) U/tr V/Nr" »CB (V) M lldA/ (V) m hp fmay^ (A ) 1" (V) [* E P (S typ ffi] '(V)' '(V)' Ic (A) 0.5 6 50 1000 900 10 40 5 PA 80 80 5 40 50 80 40


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    PDF 2SD811 2SD812 2SD813 2SD814 2SD814A 2SD818 2SD819 2SD841 zmw42 2SB753 2SD818 2SD844 fst 240 2sb764 2SD859 2SD813 2SD814 2SD814A

    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


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    PDF 4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711