2SK2525-01
Abstract: No abstract text available
Text: 2SK2525-01 N-channel MOS-FET FAP-II Series 450V > Features - 1Ω 9A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
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2SK2525-01
2SK2525-01
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Untitled
Abstract: No abstract text available
Text: 2SK2525-01 N-channel MOS-FET FAP-II Series 450V > Features - 1Ω 9A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
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2SK2525-01
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2SK2645
Abstract: 2SK2642 2SK2761 2SK1938 2sk2876 2SK1941 2SK2638 2sk2257 2SK2834 2SK2879
Text: Feb-00 VDSS 300 to 600 volts Series Package F-II series FAP-II series T-Pack TO-220AB Drain-source voltage VDSS Voltage 300 450 2SK1007(5, 1.6) 2SK2523(9, 1.0) TO-220F15 2SK2469(5, 1.0) 2SK1006(5, 1.6) 2SK2470(10, 0.53) 2SK2524(9, 1.0) TO-3P 2SK2471(10, 0.53) 2SK2525(9, 1.0)
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Feb-00
O-220AB
2SK1007
2SK2523
O-220F15
2SK2469
2SK1006
2SK2470
2SK2524
2SK2471
2SK2645
2SK2642
2SK2761
2SK1938
2sk2876
2SK1941
2SK2638
2sk2257
2SK2834
2SK2879
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F5022
Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01
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2SK3474-01
2SK3537-01MR
2SK3554-01
2SK3555-01MR
2SK3556-01L,
2SK3535-01
2SK3514-01
2SK3515-01MR
2SK3516-01L,
2SK3517-01
F5022
f5017h
F5021H
f5016h
2sk3528
2sk2696
F5038H
2SK3102-01R
2SK2696-01MR
F5018
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2SK2696
Abstract: 2SK2696-01MR 2SK1006-01MR 2SK1007-01 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK2519-01 2SK2520-01MR
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET F-II / FAP-II シリーズ F-II / FAP-II series 高速スイッチング／アバランシェ耐量保証 High speed switching / Avalanche rated 形 式 Device type VDSS ID ID pulse
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2SK2519-01
2SK2520-01MR
2SK2521-01
2SK2522-01MR
2SK2849-01L,
2SK2469-01MR
2SK2470-01MR
2SK2471-01
2SK2473-01
2SK1006-01MR
2SK2696
2SK2696-01MR
2SK1006-01MR
2SK1007-01
2SK2469-01MR
2SK2470-01MR
2SK2471-01
2SK2473-01
2SK2519-01
2SK2520-01MR
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2SK1411
Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Text: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0
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2SK1358
O-247
2SK1359
2SK1362
2SK2563
2SK2568
2SK1411
2SK1535
2SK1410
2SK1538
2SK1358 datasheet
2sk2082
2SK2397-01MR
2SK2475
2SK2370
2sk2225
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Untitled
Abstract: No abstract text available
Text: P 1 IJ 1 2SK2525-01 N-channel MOS-FET FAP-II Series 450V High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Repetitive Avalanche Rated fJ j i Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
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2SK2525-01
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2SK2525-01
Abstract: No abstract text available
Text: F U JI S U M e u ' üö U E 2SK2525-01 N-channel MOS-FET FAP-II Series 45 0V > Features - IQ 9A 80W > Outline Drawing TO -3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated
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2SK2525-01
20Kil)
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Untitled
Abstract: No abstract text available
Text: FUJI 2SK2525-01 N-channel MOS-FET [IU M FAP-II Series 450V eu M JK > Features - ID 9A > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated TO-3P 03.2^
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2SK2525-01
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01
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2SK2519-01
2SK2520-01
2SK2521-01
2SK2522-01MR
2SK2469-01MR
2SK2470-01MR
2SK2471-01
2SK2473-01
2SK1006-01MR
2SK1007-01
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01
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2SK2519-01
2SK2520-01MR
2SK2521-01
2SK2522-01MR
2SK2469-01MR
2SK2470-01MR
2SK2471-01
2SK2473-01
2SK1006-01
2SK1007-01
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2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
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2SK2525-01
Abstract: No abstract text available
Text: S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : Power MOSFET 2 SK 2 5 2 5- 0 I SPEC. No. F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change w ithout notice. DATE NAME APPROVED P • imiîj îi wF il vn yr ut ri wi r CHECKED
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0257-R-004a
2SK2525-0
Y0257-R-003a
0257-R-003a
2SK2525-01
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts D evioe _ l Y R e _ 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2S K 2469-01M R 2S K 247 0-0 1M R 2SK24tl~01 £ S K 2 4 7 3 -& t 2S K 10 o 6-o i M r
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2SK2519-01
2SK2520-01
2SK2521-01
2SK2522-01MR
2469-01M
2SK24tl
2SK1007-01
2SK1009-01
2SK1386-01
2SK2523-01
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2sk1507
Abstract: TO-220F15 2SK1916-01R K1102 TO220F15 2SK1820-01L 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK2469-01MR
Text: <§ MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01
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2SK2519-01
O-220
2SK2520-01
O-220F15
2SK2521-01
2SK2522-01MR
O-220
2SK2469-01MR
2sk1507
TO-220F15
2SK1916-01R
K1102
TO220F15
2SK1820-01L
2SK1006-01MR
2SK1007-01
2SK1009-01
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Untitled
Abstract: No abstract text available
Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,
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2SK2770-01
2SK2272-01R
2SK2528-01
2SK1212-01R
2SK1944-01
2SK2653-01R
2SK727-01
2SK1217-01R
2SK1082-01
2SK2655-01R
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2SK2522-01
Abstract: No abstract text available
Text: K /\° 7 - MOSFET / Power MOSFETs • M 7 -M O S F E T F-l y ' J - X < 7 m sc Power MOSFET F-l series High sp eed switching Id Id pulse 2SK2753-01 2SK947-MR 2SK900 2SK901 2SK1549-R 2SK902 2SK949-MR 2SK950 2SK724 *2 Amps. Amps. 50 45 180 0.03 ±20 3.0 TO-3P
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2SK905
2SK2494-01
2SK906
2SK2000-R
2SK2753-01
2SK947-MR
2SK900
2SK901
2SK1549-R
2SK902
2SK2522-01
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