2SK2876-01MR
Abstract: No abstract text available
Text: 2SK2876-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 2.54 Applications Switching regulators UPS Uninterruptible Power Supply
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2SK2876-01MR
O-220F15
SC-67
2SK2876-01MR
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Untitled
Abstract: No abstract text available
Text: 2SK2876-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK2876-01MR
O-220F
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2sk2876
Abstract: 2SK2876-01MR
Text: 2SK2876-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK2876-01MR
O-220F
2sk2876
2SK2876-01MR
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Untitled
Abstract: No abstract text available
Text: 2SK2876-01MR N-channel MOS-FET FAP-IIS Series 500V > Features - 1,5Ω ±6A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications
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2SK2876-01MR
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2SK2876-01MR
Abstract: 2sk2876
Text: 2SK2876-01MR N-channel MOS-FET FAP-IIS Series 500V > Features - 1,5Ω ±6A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications
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2SK2876-01MR
2SK2876-01MR
2sk2876
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2sk2876
Abstract: 2SK2876-01MR
Text: 2SK2876-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK2876-01MR
O-220F
2sk2876
2SK2876-01MR
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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2SK3102-01R
Abstract: 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type 2SK3340-01 2SK2870-01L, S 2SK2871-01 2SK2872-01MR 2SK2873-01
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2SK3340-01
2SK2870-01L,
2SK2871-01
2SK2872-01MR
2SK2873-01
2SK2638-01MR
2SK2639-01
2SK2754-01L,
2SK2755-01
2SK2756-01R
2SK3102-01R
2sk3102
2SK2850
2SK2640
2SK3264
2SK2640 equivalent
2SK2645
2SK3264-01MR
2sk3102-01
2SK2648 equivalent
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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F5022
Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01
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2SK3474-01
2SK3537-01MR
2SK3554-01
2SK3555-01MR
2SK3556-01L,
2SK3535-01
2SK3514-01
2SK3515-01MR
2SK3516-01L,
2SK3517-01
F5022
f5017h
F5021H
f5016h
2sk3528
2sk2696
F5038H
2SK3102-01R
2SK2696-01MR
F5018
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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MTP6N60E equivalent
Abstract: buz91a equivalent buz90 equivalent IRFBE30 equivalent IRFB11N50A equivalent irfp460a equivalent BUZ74 equivalent 2SK2645 "cross reference" equivalent buz305 EQUIVALENT irfp22n50a
Text: Infineon Technologies Cross Reference List CoolMOS CoolMOS Company Product Name VDS [V] IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IRF820 IRF820A IRF820AS IRF820S IRF830A IRF830AS IRF830S IRF840 IRF840A IRF840AS IRF840LCS IRF840S
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IRF820
IRF820A
IRF820AS
IRF820S
IRF830A
IRF830AS
IRF830S
IRF840
IRF840A
IRF840AS
MTP6N60E equivalent
buz91a equivalent
buz90 equivalent
IRFBE30 equivalent
IRFB11N50A equivalent
irfp460a equivalent
BUZ74 equivalent
2SK2645 "cross reference"
equivalent buz305
EQUIVALENT irfp22n50a
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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USFB053
USFB13
USFB13A
USFB13L
USFB14
USFZ10V
USFZ11V
USFZ12V
USFZ13V
USFZ15V
KF6N60
2SK3850 equivalent
KF9N25
KF7N50
MDF10N65b transistor
PANASONIC ZENER
Kf10n60
KIA278R12PI equivalent
kid65003ap equivalent
kia578r05
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2SK2645
Abstract: 2SK2642 2SK2761 2SK1938 2sk2876 2SK1941 2SK2638 2sk2257 2SK2834 2SK2879
Text: Feb-00 VDSS 300 to 600 volts Series Package F-II series FAP-II series T-Pack TO-220AB Drain-source voltage VDSS Voltage 300 450 2SK1007(5, 1.6) 2SK2523(9, 1.0) TO-220F15 2SK2469(5, 1.0) 2SK1006(5, 1.6) 2SK2470(10, 0.53) 2SK2524(9, 1.0) TO-3P 2SK2471(10, 0.53) 2SK2525(9, 1.0)
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Feb-00
O-220AB
2SK1007
2SK2523
O-220F15
2SK2469
2SK1006
2SK2470
2SK2524
2SK2471
2SK2645
2SK2642
2SK2761
2SK1938
2sk2876
2SK1941
2SK2638
2sk2257
2SK2834
2SK2879
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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2sk2876
Abstract: 2SK2876-01MR
Text: This m a l« rlil and the Information heraln la the property o f Fuji Electric Co.Lid. They ahall ba neither re p ro d u ce d , c o p ie d , lent, or diacloaed in any way w h aU o ave r tor tha uaa of an y third party nor uaad for tha m anufacturing purpoaee w ith o u t
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2SK2876-01MR
2SK2876-01MR
TQ-220F
2sk2876
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2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
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mosfet specification
Abstract: UV diode
Text: Sd o c . ‘\ i CHECKED DATE NAME DWG.N0. Thl» material and Ih» Information herein la Ih* property of Fuji Electric Co.»Ud. They thalt fa* neither reproduced* copied, lint, or dtadoied in any way whaltoaver for the uto of any third party nor uted for the manufacturing purpose« without
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2SK2876-01MR
2SK2876-01MR
TD-220F
mosfet specification
UV diode
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2SK2771-01R
Abstract: 2sk2761 2SK2082
Text: 7 -M OSFET / Power MOSFETs J |^ j FAP-IIA ÿ ' J - X » 5£ FAP-IIA series Continued VBBS to (pulse) lo Device type Volte 2SK1983-01 2SK2029-01L, S 2SK1984-01MR 2SK1942-01 2SK2224-01R 2SK1945-01L, S 2SK1943-01 2SK1985-01MR 2SK1944-01 2SK2272-01R 2SK2082-01
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O-220AB
O-220
O-220F15
2SK2771-01R
2sk2761
2SK2082
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2SK2642-01MR
Abstract: 2SK2652 2SK2876-01MR
Text: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type 2SK2872-01MR 2SK2870-01L.S Maximum Ratinas I d A Pd (W) Voss (V) 450 8 30 450 8 50 8 450 50 Cha •acteristics (IVax.) Package
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2SK2872-01MR
2SK2870-01L
2SK2871-01
2SK2873-01
2SK2638-01
2SK2754-01L
2SK2639-01
2SK2756-01R
2SK2755-01
2SK2876-01MR
2SK2642-01MR
2SK2652
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