Contextual Info: PU J1 2SK2470-01 MR N-channel MOS-FET tìU tìlE L T te U K FAP-II Series 300V > Features - 0,53ß 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Avalanche Proof

Contextual Info: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01

Contextual Info: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01

55L Power Mosfet

Abstract: 150P T151 VI-AIM RGS100 80-XI
Contextual Info: FUJI '95 No. 12 ^ít£;í:i;l-*?»<?<r.¿í.;Mi: !'Í-Í> í¡í;!:¡í îii.ï ïf i3î.Sfï«-ï - _ 300V / 1 0 A / 0.53 Q ií d t /W —MOSFET FAP-D Nz- V ^ J l ' X > y \ > A ^ < > 2SK2470-01m r MOSFET mm N-channel enhancement mode POWER MOSFET M • ft

Contextual Info: 2SK2470-01MR N-channel MOS-FET FAP-II Series 300V > Features - 0,53Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2sk1507

Abstract: TO-220F15 2SK1916-01R K1102 TO220F15 2SK1820-01L 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK2469-01MR
Contextual Info: <§ MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01

MOSFET 300V

Abstract: 5310A
Contextual Info: 2SK2470-01MR N-channel MOS-FET FAP-II Series 300V > Features - 0,53Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

mosfet 300v 10a

Abstract: 2SK2470-01MR 2SK24 5310A
Contextual Info: 2SK2470-01MR N-channel MOS-FET FAP-II Series 300V > Features - 0,53Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: F U JI [l'ikaieiruäUE 2SK2470-01 MR N-channel MOS-FET FAP-II Series 300V > Features - 0 ,5 3 Q I0 A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof

2SK2645

Abstract: 2SK2642 2SK2761 2SK1938 2sk2876 2SK1941 2SK2638 2sk2257 2SK2834 2SK2879
Contextual Info: Feb-00 VDSS 300 to 600 volts Series Package F-II series FAP-II series T-Pack TO-220AB Drain-source voltage VDSS Voltage 300 450 2SK1007(5, 1.6) 2SK2523(9, 1.0) TO-220F15 2SK2469(5, 1.0) 2SK1006(5, 1.6) 2SK2470(10, 0.53) 2SK2524(9, 1.0) TO-3P 2SK2471(10, 0.53) 2SK2525(9, 1.0)

2SK100

Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

2SK2652

Abstract: 2SK2771-01R
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT

F5022

Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01

2SK2696

Abstract: 2SK2696-01MR 2SK1006-01MR 2SK1007-01 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK2519-01 2SK2520-01MR
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET F-II / FAP-II シリーズ F-II / FAP-II series 高速スイッチング／アバランシェ耐量保証 High speed switching / Avalanche rated 形 式 Device type VDSS ID ID pulse

2SK2470-01MR

Abstract: T151 SS092 FAPD
Contextual Info: FUJI '95 No. 12 ^ ± W - i •» I « :; '4 ■* : I Ï - i : y ■} ^ : } l| '. I :i l i i ï ; i; |- -*?i-i I | ‘>J|.| ,s ;g ¡¡/¿i i SH - i ' i » r . í i f . í ? >4 si ,'s r ï ;.} f i .} ?f iÿ î.S fï * ; i _ B l i i / x 7 M ‘ 300V / 1 0 A / 0.53 Q

Contextual Info: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,

2SK2522-01

Contextual Info: K /\° 7 - MOSFET / Power MOSFETs • M 7 -M O S F E T F-l y ' J - X < 7 m sc Power MOSFET F-l series High sp eed switching Id Id pulse 2SK2753-01 2SK947-MR 2SK900 2SK901 2SK1549-R 2SK902 2SK949-MR 2SK950 2SK724 *2 Amps. Amps. 50 45 180 0.03 ±20 3.0 TO-3P