Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK2469 Search Results

    2SK2469 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2469-01MR Fuji Electric N-channel MOS-FET Original PDF
    2SK2469-01MR Fuji Electric N-Channel Enhancement Mode Power MOSFET Scan PDF

    2SK2469 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET 300V

    Abstract: 2SK2469-01MR
    Text: 2SK2469-01MR N-channel MOS-FET FAP-II Series 300V > Features - 1Ω 5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    PDF 2SK2469-01MR MOSFET 300V 2SK2469-01MR

    2SK2469-01MR

    Abstract: No abstract text available
    Text: 2SK2469-01MR N-channel MOS-FET FAP-II Series 300V > Features - 1Ω 5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    PDF 2SK2469-01MR 2SK2469-01MR

    Untitled

    Abstract: No abstract text available
    Text: 2SK2469-01MR N-channel MOS-FET FAP-II Series 300V > Features - 1Ω 5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    PDF 2SK2469-01MR

    2SK2645

    Abstract: 2SK2642 2SK2761 2SK1938 2sk2876 2SK1941 2SK2638 2sk2257 2SK2834 2SK2879
    Text: Feb-00 VDSS 300 to 600 volts Series Package F-II series FAP-II series T-Pack TO-220AB Drain-source voltage VDSS Voltage 300 450 2SK1007(5, 1.6) 2SK2523(9, 1.0) TO-220F15 2SK2469(5, 1.0) 2SK1006(5, 1.6) 2SK2470(10, 0.53) 2SK2524(9, 1.0) TO-3P 2SK2471(10, 0.53) 2SK2525(9, 1.0)


    Original
    PDF Feb-00 O-220AB 2SK1007 2SK2523 O-220F15 2SK2469 2SK1006 2SK2470 2SK2524 2SK2471 2SK2645 2SK2642 2SK2761 2SK1938 2sk2876 2SK1941 2SK2638 2sk2257 2SK2834 2SK2879

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original
    PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    F5022

    Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01


    Original
    PDF 2SK3474-01 2SK3537-01MR 2SK3554-01 2SK3555-01MR 2SK3556-01L, 2SK3535-01 2SK3514-01 2SK3515-01MR 2SK3516-01L, 2SK3517-01 F5022 f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018

    2SK2696

    Abstract: 2SK2696-01MR 2SK1006-01MR 2SK1007-01 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK2519-01 2SK2520-01MR
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET F-II / FAP-II シリーズ F-II / FAP-II series 高速スイッチング/アバランシェ耐量保証 High speed switching / Avalanche rated 形 式 Device type VDSS ID ID pulse


    Original
    PDF 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2849-01L, 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK2696 2SK2696-01MR 2SK1006-01MR 2SK1007-01 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK2519-01 2SK2520-01MR

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01


    OCR Scan
    PDF 2SK2519-01 2SK2520-01 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01


    OCR Scan
    PDF 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 2SK1007-01

    2SK2469-01MR

    Abstract: No abstract text available
    Text: '95 No. 11 F U J I V4># iw o M s iT it e u e *,<W*|; 4^ ^ y |i< iu v s <|#i t i l *±W * imma.b- _ ±/\7-M0SFET FAP-n 5 1 3 0 0 V /5 A 2SK2469-01MR N“L'V ^ ; u x > /\> X ^ > h®/N°7-M0SFET mm N-channel enhancement mode POWER MOSFET


    OCR Scan
    PDF 300V/5A/1 2SK2469-01MR ls30EJ 2SK2469-01MR

    MOSFET 300V

    Abstract: 300V series regulators
    Text: FUJI 2SK2469-01MR N-channel MOS-FET FAP-II Series 300V > Features - IQ 5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    OCR Scan
    PDF 2SK2469-01MR MOSFET 300V 300V series regulators

    VOS300

    Abstract: No abstract text available
    Text: FU JI 2SK2469-01 MR N-channel MOS-FET FAP-II Series 300V > Features - ID 5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    OCR Scan
    PDF 2SK2469-01 VOS300

    2sk1507

    Abstract: TO-220F15 2SK1916-01R K1102 TO220F15 2SK1820-01L 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK2469-01MR
    Text: <§ MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01


    OCR Scan
    PDF 2SK2519-01 O-220 2SK2520-01 O-220F15 2SK2521-01 2SK2522-01MR O-220 2SK2469-01MR 2sk1507 TO-220F15 2SK1916-01R K1102 TO220F15 2SK1820-01L 2SK1006-01MR 2SK1007-01 2SK1009-01

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2469-01 MR N-channel MOS-FET l â 'U M s u t J c U K FAP-II Series 300V > Features - in 5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications


    OCR Scan
    PDF 2SK2469-01 20KiJ) B53A7T5

    2SK100

    Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:


    OCR Scan
    PDF T0-220 T0-220F15 2SJ472-01L 2SJ314-01L 2SJ473-01L 2SK2248-01L 2SK1942-01 2SK2770-01 2SK2528-01 2SK1944-01 2SK100 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan
    PDF 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050

    2SK2652

    Abstract: 2SK2771-01R
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT


    OCR Scan
    PDF F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R

    TO-3P Jedec package outline

    Abstract: 2sk1507 TO-220F15 K1015 TO220F15 2SK1016 2SK1015-01 2SK1916 high voltage mosfet, to-220 case 2SK956-01 equivalent
    Text: 2SK1507-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features j SERIES j Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • V GSS = ± 30V Guarantee • Avalanche-proof


    OCR Scan
    PDF 2SK1507-01 SC-67 O-220F15 2SK1081-01 2SK956-01 2SK1385-01R 2SK1548-01 2SK1024-01 O-220 TO-3P Jedec package outline 2sk1507 TO-220F15 K1015 TO220F15 2SK1016 2SK1015-01 2SK1916 high voltage mosfet, to-220 case 2SK956-01 equivalent

    Untitled

    Abstract: No abstract text available
    Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,


    OCR Scan
    PDF 2SK2770-01 2SK2272-01R 2SK2528-01 2SK1212-01R 2SK1944-01 2SK2653-01R 2SK727-01 2SK1217-01R 2SK1082-01 2SK2655-01R

    2SK2522-01

    Abstract: No abstract text available
    Text: K /\° 7 - MOSFET / Power MOSFETs • M 7 -M O S F E T F-l y ' J - X < 7 m sc Power MOSFET F-l series High sp eed switching Id Id pulse 2SK2753-01 2SK947-MR 2SK900 2SK901 2SK1549-R 2SK902 2SK949-MR 2SK950 2SK724 *2 Amps. Amps. 50 45 180 0.03 ±20 3.0 TO-3P


    OCR Scan
    PDF 2SK905 2SK2494-01 2SK906 2SK2000-R 2SK2753-01 2SK947-MR 2SK900 2SK901 2SK1549-R 2SK902 2SK2522-01