2N2778 Search Results

Contextual Info: 2N2778 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200ö V(BR)CBO (V)200 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175# I(CBO) Max. (A)15m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N1016

Abstract: 2N2772 2N2771 2N1015 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430
Contextual Info: • 4 ñ b c1 E m 3 D D G D 4 3 ‘ì DbD discrete devices JEmitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JEDEC/TYPE 151 153 152 154 2N1015, A, B, C, D 2N1016,

Contextual Info: IINCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. MIL-PRF-19500/592G 17 April 2013 SUPERSEDING MIL-PRF-19500/592F 2 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

2N2824

Abstract: 2N2819 2N2771
Contextual Info: electronics inc POWER TRANSISTORS TYPE NO. 2N2757 200 MAXIMUM RATINGS Ic B V cbo BVcto BVteo V A V V 50 50 15 30 Ic A Vce V Test Sat Voltages Conditions V be Ic le lEBO V ce A A ma V V 10 4 1.5 a> hFE MIN MAX 10 2.5 10 2 25 2 25 2N2758 200 100 100 15 30 10

2N2753

Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
Contextual Info: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068

2N2772

Abstract: TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2n1016 2N2226 2N1050C
Contextual Info: discrete devices JEmitronicr hot line TO LL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JE D E C /T Y P E 151 153 152 154 2N1015, A, B, C, D 2N1016, A, B, C, D 2N3429-32 163 164 PEAK CURRENT

LM3661TL-1.25

Contextual Info: POWER TRANSISTORS TYPE NO. TO-63 PT @ 25°C Watts MAXIMUM RATINGS B V c bo B V ceo B V ebo le V A V V Sat Voltages 3> hFE MIN MAX le A V ce VCE V be V V V Test Conditions le Ib A A lEBO ma 2N2757 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200 100 100 15

2N2772

Abstract: 2n2770
Contextual Info: POWER TRANSISTORS Sat Voltages PT TYPE NO. @ 25°C Watts h FE M A X I M U M R A T IN C S Ic B V c b c BV ceq B V e b o V V V A i> M IN M AX Ic A Test Conditions Vet V be Ic Ib lEBO V V V A A ma r VCE 2N2757 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200

2N2227

Abstract: 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229
Contextual Info: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information Military Product Products Quality Quote Request Value Added E-mail home | help | email Alloy Transistors HIGH S.O.A. NPN POWER TRANSISTORS 6-20 AMPERES 2N1015, 2N1016, 2N3429-32

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

592F

Abstract: 2N7228 JANTX mosfet 2N7227U 592E 2N7225 2N7228 JANTX mosfet data sheet 2N7224 2N7224U kovar 2N7227
Contextual Info: IINCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 2 September 2010. MIL-PRF-19500/592F 2 June 2010 SUPERSEDING MIL-PRF-19500/592E 7 April 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

TO82 TRANSISTOR

Abstract: TO82 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C

WESTINGHOUSE transistor

Abstract: Westinghouse CO 8 westinghouse relay westinghouse transistors westinghouse semiconductor westinghouse power transistor 2N2761 2N2771 2N2770 westinghouse
Contextual Info: Westinghouse Therm al Characteristics Thermal resistance, 0 jc , #C /w a tt, max. .0.5 Power dissipation, P j at T c = 7 5 °C w atts, max. 200 Typical thermal drop, case to heat sink, ° C /w a tt.0.3

2N2818

Abstract: 2N2757 2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766
Contextual Info: POWER TRANSISTORS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS B V c bo B V ceo B V ebo Ic V A V V Sat Voltages 3> hFE MIN MAX Test Conditions Ic A V ce VCE V be Ic Ib lEBO V V V A A ma 2N2757 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200 100 100 15 30 10

2n7226

Abstract: transistor substitution chart 2N7224 2N7224U 2N7225 2N7225U 2N7227 2N7227U 2N7228 2N7228U
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 1996 IINCH-POUND MIL-PRF-19500/592C 21 June 1996 SUPERSEDING MIL-S-19500/592B 31 January 1991 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

2N2757

Abstract: 2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766 2N2769
Contextual Info: POWER TRANSISTORS TYPE NO. TO-63 MIN MAX le A V ce VCE V be V V V Test Conditions le Ib lEBO A A ma 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200 100 100 15 30 10 10 4 1.5 2.5 10 2 25 2N2759 200 150 150 15 30 10 10 4 1.5 2.5 10 2 25 2N2760 200 200 200

2N2875

Abstract: 2N2836 2n2782 2N2773 2N2869 2n2840 rca 2N2750 2N2768 2N1893 motorola 2N2857 semicoa
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

TO82 TRANSISTOR

Abstract: npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE |ù 2 5 M Q S a 0 00 07=11 M J ' ^ T g ^ T p f leMax Amps VCECHSUS Polarity 2N1015 2N1015A 2N1015B 2N1015C

2N2824

Abstract: 2N2761 2N2757 2N2758 2N2759 2N2760 2N2763 2N2764 2N2765 2N2766
Contextual Info: 8365700 SOLID POWER CORP 95C 0 0 1 1 8 SOLID POWER CORP TS D *T'S3-öl » F | fl3bS7D0 □□□□Hfl t POWER TRANSISTORS TYPE NO. TO-63 MAXIMUM RATINGS Ic B V c b o B V ceo B V ebo V A V V (5 hFE MIN MAX Ic A V CE V Sat Voltages V CE V be V V Test Conditions

2N2772

Abstract: 2N2757 2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766
Contextual Info: A P I ELECTRONICS INC blE J> I 00M35T2 O O O O ^ b 45T « A M C POWER TRANSISTORS TYPE NO. TO-63 24 PT MAXIMUM RATINGS @ 25°C B V cb o B V ceo B V ebo Ic V A V V Watts Ic A VCE V Sat Test Voltages Conditions V ce V be Ic Ib lEBO V V A A ma hFE < MIN MAX

2N4211

Abstract: 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228
Contextual Info: Table 1 A B C D E F G H I 1 163-04 1748-0630 1768-0610 2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2 163-06 1748-0810 1768-0620 2N1015A 2N2016 2N2740 2N3771 2N4003 2N6047 3 163-08 1748-0820 1768-0630 2N1015B 2N2109 2N2741 2N3772 2N4210 2N6048 4 163-10 1748-0830 1768-0810 2N1015C 2N2110