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    2N3767 Price and Stock

    MACOM JANTXV2N3767

    TRANS NPN 80V 4A TO66
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    Microchip Technology Inc 2N3767

    TRANS NPN 80V 4A TO66
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    Microchip Technology Inc JAN2N3767

    TRANS NPN 80V 4A TO66
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    Microchip Technology Inc JANTX2N3767

    NPN TRANSISTOR
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    Microchip Technology Inc JANTXV2N3767

    TRANS NPN 80V 4A TO66
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    2N3767 Datasheets (52)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N3767 Central Semiconductor Power Transistors Original PDF
    2N3767 Microsemi NPN POWER SILICON TRANSISTOR Original PDF
    2N3767 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=80 / Ic=4 / Hfe=40-160 / fT(Hz)=10M / Pwr(W)=20 Original PDF
    2N3767 Advanced Semiconductor Silicon Transistors Scan PDF
    2N3767 API Electronics Transistor Selection Guide Scan PDF
    2N3767 API Electronics Short form transistor data Short Form PDF
    2N3767 API Electronics Short form transistor data Short Form PDF
    2N3767 Diode Transistor Transistors Scan PDF
    2N3767 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N3767 General Diode Transistor Selection Guide Scan PDF
    2N3767 General Transistor Power Transistor Selection Guide Scan PDF
    2N3767 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3767 Motorola The European Selection Data Book 1976 Scan PDF
    2N3767 Motorola European Master Selection Guide 1986 Scan PDF
    2N3767 Motorola Power Transistor Selection Guide Scan PDF
    2N3767 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N3767 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3767 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3767 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3767 Unknown Vintage Transistor Datasheets Scan PDF

    2N3767 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3767

    Abstract: 2N3767 JANTX
    Text: 2N3767 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N3767 O213AA) 1-Aug-02 2N3767 2N3767 JANTX

    2N3766

    Abstract: 2N3767 JANTX 2N3767
    Text: NPN Power Silicon Transistor 2N3766 & 2N3767 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/518 • TO-66 TO-213AA Package Maximum Ratings Symbol 2N3766 2N3767 Units Collector - Emitter Voltage Ratings VCEO 60 80 Vdc Collector - Base Voltage


    Original     		PDF 2N3766 2N3767 MIL-PRF-19500/518 O-213AA) 2N3766 2N3767 JANTX

    2N3767SMD

    Abstract: No abstract text available
    Text: 2N3767SMD MECHANICAL DATA Dimensions in mm inches 1 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )


    Original     		PDF 2N3767SMD 2N3767SMD

    2N3767

    Abstract: LE17
    Text: SILICON NPN TRANSISTOR 2N3767 • Low Saturation Voltage • High Gain Characteristics • Hermetic TO66 Metal Package • High Reliability Screening Options Available • Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF 2N3767 143mW/ 300us, O-213AA) 2N3767 LE17

    2N3738 equivalent

    Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
    Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


    Original     		PDF 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR 2N3767 • Low Saturation Voltage • High Gain Characteristics • Hermetic TO66 Metal Package • High Reliability Screening Options Available • Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF 2N3767 143mW/Â 300us, O-213AA)

    2N3767

    Abstract: 2N3766 2000C transistor 2N3766
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices Qualified Level 2N3766 JAN JANTX JANTXV 2N3767 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


    Original     		PDF MIL-PRF-19500/518 2N3766 2N3767 O-213AA) 2000C 2N3767 2N3766 2000C transistor 2N3766

    Untitled

    Abstract: No abstract text available
    Text: 2N3767 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3767 Freq10M

    Untitled

    Abstract: No abstract text available
    Text: na. TELEPHONE: 973 378-2008 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA (212) 227-8008 FAX: (973) 3784080 2N3767 MAXIMUM RATINGS (Tc = 25'Cunlwoth.rwlse notad) (TO-66) 2N3767 Unit 100 Vdc V EB 6.0 Vdc VCEO 80 Vdc 4.0 Adc Symbol Rating Collector-Base Voltage


    Original     		PDF 2N3767 WidthJ300M*

    2N4001 diode

    Abstract: 2N2990 MT27 2N3665 2N4001 diode 2n4001 2N2987 2N2988 2N2989 2N2991
    Text: Device Type VCEO hFE V Min/Max 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2N3665 2N3666 2N3766 2N3767 2N4000 2N4001 2N4237 2N4238 2N4239 2N4910 2N4911 2N4912 2N5660 2N5661 2N5662 2N5663 2N5681 2N5682 80 100 80 100 80 100 80 100


    Original     		PDF 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2N4001 diode 2N2990 MT27 2N3665 2N4001 diode 2n4001 2N2987 2N2988 2N2989 2N2991

    NPN Transistor VCEO 80V 100V

    Abstract: 2N3767SMD05 SMD05
    Text: 2N3767SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3 5.72 (.225) 0.76 (0.030) min. 1 2 10.16 (0.400) 3.05 (0.120) 0.127 (0.005) NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT


    Original     		PDF 2N3767SMD05 SMD05 O-276AA) 10MHz NPN Transistor VCEO 80V 100V 2N3767SMD05 SMD05

    2N5428

    Abstract: No abstract text available
    Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


    Original     		PDF 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N5428

    2N3767

    Abstract: 2N3766 2000C
    Text: TECHNICAL DATA 2N3766 JAN, JTX, JTXV 2N3767 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/518 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


    Original     		PDF 2N3766 2N3767 MIL-PRF-19500/518 2N3766 2N3767 O-213AA) 2000C

    Untitled

    Abstract: No abstract text available
    Text: 2N3767SMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount


    Original     		PDF 2N3767SMD05 O276AA) 15-Aug-02

    Untitled

    Abstract: No abstract text available
    Text: 2N3767 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N3767 O213AA) 30-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N3767+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3767 Freq10M

    Untitled

    Abstract: No abstract text available
    Text: 2N3767+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3767 Freq10M

    Untitled

    Abstract: No abstract text available
    Text: 2N3767+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3767 Freq10M

    Untitled

    Abstract: No abstract text available
    Text: COLLECTOR CURRENT = 2 AMPS NPN TYPES 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238 2N4239 2N4240 2N4862 2N4863 2N4864 2N4910 2N4911 2N4912 2N5050


    OCR Scan     		PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719

    2N3806 2N3906

    Abstract: 2N3907 2N3904DCSM 2N2222ADCSM hirel bfy81 2N2640DCSM 2N3904D
    Text: 37E S E M E L A B LTD 5133167 □□□□□17 T> fl ISMLB 7 Type No. Reliability Polarity Option 2N3763 2N3764 2N3765 2N3766 2N3767 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP PNP NPN NPN 2N3771 2N3772 2N3773 2N3782 2N3789 SCREEN SCREEN SCREEN SCREEN CECC ^


    OCR Scan     		PDF 2N3763 2N3764 2N3765 2N3766 2N3767 2N3771 2N3772 2N3773 2N3782 2N3789 2N3806 2N3906 2N3907 2N3904DCSM 2N2222ADCSM hirel bfy81 2N2640DCSM 2N3904D

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE


    OCR Scan     		PDF 0-425V 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N3766

    2N3766 MOTOROLA

    Abstract: 2N3766 2N3741 MOTOROLA 2n3767 motorola 2N3767 2N3741 2h37 2N3740 motorola motorola 2n3766
    Text: MOTORCLA SC XST R S/R F - 0 9 12E D | t.3b?2Si| □ 0 â 4 4 û c! 1 | MOTOROLA 2N3766 2N3767 SEMICONDUCTOR TECHNICAL DATA M E D IU M - P O W E R N P N S IL IC O N T R A N S I S T O R S . . . fo r use in driver circuits, switching, and m e d iu m -p o w e r-am p lifie rs applica­


    OCR Scan     		PDF 2N3766 2N3767 O-213AA 2N3740 2N3766) 2N3741 2N3767) 2N3766 MOTOROLA 2N3741 MOTOROLA 2n3767 motorola 2N3767 2N3741 2h37 2N3740 motorola motorola 2n3766

    2N3740

    Abstract: 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4898 2N4899 2N4910 2N4911
    Text: NE III ENGLAND SEMI CONDUCT OR 5TE bSbHTTa D = 1-5À VCEO SUS = 4 0 -4 2 5 V fT = 3-10 M H z □□□□□SO lc ( M A X ) Type No. 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N4898 2N4899 2N4900 2N5344 2N4910 2N4911 2N4912 2N3767 VCEQ (SUS) (V) 1C (MAX) (A) 60


    OCR Scan     		PDF 0-425V 2N3740 2N3766 2N3740A 2N3741 2N3767 2N3741A 2N4898 2N4910 2N1483 2N3740A 2N3741A 2N4899 2N4911

    Untitled

    Abstract: No abstract text available
    Text: 0CH3592 A P I A P I ELECTRONICS ELECTRONICS INC 26C I NC EL, D 7^-3 00218 DE | DOMBSTS 3-b I ß COLLECTOR CURRENT = 2 AMPS NPN TYPES - CONTINUED Device No 2N2991 2N2992 2N2993 2N2994 2N3665 •2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238


    OCR Scan     		PDF 0CH3592 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917