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    2N3946 NPN TRANSISTOR Search Results

    2N3946 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N3946 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N3946 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n÷ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.150


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    PDF 2N3946 Freq250M

    2N4035

    Abstract: 2n4209 datasheet 2N3576 2N3672 2N3700 2N3701 2N3798A 2N3799A 2N3829 2N3946
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ µA) (V) (V) (V) (µ MIN MIN MIN VCB (V) MAX *ICES *ICEV hFE @ IC (mA) MIN MAX @VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) NF ton (ns) toff (ns) MAX


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    PDF 2N3576 2N3672 2N3700 2N4415A 2N4962 2N4963 2N5056 2N5057 2N4035 2n4209 datasheet 2N3576 2N3672 2N3700 2N3701 2N3798A 2N3799A 2N3829 2N3946

    2N4035

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ *ICES *ICEV (V) (V) (V) ( A) MIN MIN MIN VCB hFE @ IC @VCE VCE(SAT) @ IC Cob (V) MAX (mA) MIN (V) MAX (V) (mA) MAX fT NF ton toff (pF) (MHz) (dB) (ns) (ns) MAX


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    PDF 2N3576 2N3672 2N3700 2N4962 2N4963 2N5056 2N5057 CM4209 04-April 2N4035

    2n5183

    Abstract: BC187 Small Signal Transistors TO-18 Case
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


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    PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A 2n5183 BC187 Small Signal Transistors TO-18 Case

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


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    PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390

    2N3014 TO-18

    Abstract: 2N2539 2N3829 2n4014 datasheet BC477 2N718A BSV68 30-40-500 BC187 BC477 equivalent
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


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    PDF 2N703 2N706C 2N708 2N709A BSY62 BSY79 BSY95A MM4257 MM4258 23-February 2N3014 TO-18 2N2539 2N3829 2n4014 datasheet BC477 2N718A BSV68 30-40-500 BC187 BC477 equivalent

    LM3661TL-1.40

    Abstract: BSX20 2N719A
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


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    PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A LM3661TL-1.40 BSX20

    2N3810 LCC

    Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
    Text: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *


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    PDF O-116 2N3810 LCC 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB

    2N2222A plastic package

    Abstract: FT3904 2n5857 2N2222A
    Text: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SW ITCHING TRANSISTORS BY ASCENDING VCEO PLASTIC PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) (hfe) VOLTS TYPE hFE @ MIN M I N - M A X 'c VOLTS @ (V c e r ) V CE(sat) h lc a h FE O V CEO


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    PDF 2N5857 MPSA56 2N5858 MPS6590 O-105 2N869 2N869A 2N978 2N1991 2N2927 2N2222A plastic package FT3904 2N2222A

    2N5057

    Abstract: 2N3829 2n4384
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION hFE BVC B O BVCEO BVEBO ICBO VCBC (V) (V) M MIN yMtti R MM • •c (MA) (|*A) e v e * V C E fS A T je iC C o b M MM MAX MAX ices (V) (w A ) MAX it NF ton <pF) (MHZ) (ÜB) (M ) MAX MIN


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    PDF 2N3576 2N3672 2N3700 2N3701 2N3798A 2N3799A 2N3829 2N3946 2N3947 2N3962 2N5057 2n4384

    2n3700a

    Abstract: 2n3946 npn transistor 2N3947 2n4013 2N2897 2N3302 2N2484 JANTX 2N3013 JANTX ST 2N4014 2N2481
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE TO-18 T0206AA v n «. sus VOLTS lc (max) AMPS 2N2481 15 0.05 2N2484 60 2N2895 DEVICE TYPE VcEO hfE @ Ic/ VcE min/max @ mA/V VcE(sat) @ Ic^B V @ m A/mA C9P p fr (MHz) 40/120@10/l 0.25@10/1


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    PDF 2N2481 2N2484 T0206AA 2N2895 2N2896 2N2897 2N3013 2N3014 2N3302 2N3700A 2n3946 npn transistor 2N3947 2n4013 2N2484 JANTX 2N3013 JANTX ST 2N4014

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V @ lc hFE BVCBO BVCEO b v e b o ICBO @ VCBO (mA) (V) MIN e VCE VCE(SAT) @ 1C Cob (V) MAX (V) (mA) MAX (pF) fT NF ton (MHZ) (dB) (ns) MAX MIN


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    PDF 2N3576 2N3672 2N3700 2N4962 2N4963 2N5056 2N5057 2N4209 2N4269

    2n3013

    Abstract: 2n3700a
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE TO-18 T0206AA v DEVICE TYPE V cEO Ic sus VOLTS (max) AMPS 2N2481 15 0.05 2N2484 60 2N2895 VCE min/max @ mA/V 1»FE @ V VcE(sat) @ V @ mA/mA C(P P fx (MHz) 40/120@10/l 0.25@10/1 5 300 0.05


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    PDF 2N2481 T0206AA 2N2484 2N2895 2N2896 2N2897 2N3013 2N3014 2N3302 2N3700A

    2N915

    Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
    Text: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:


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    PDF DMB105 2C3904 2N915 2N916 2N2716* 2N2923 2N2924 2N2925 2N2926* 2N3390* 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392

    PN222A

    Abstract: 2N2222A TO-92 2N3904 TO-92 type to236 2N2222A
    Text: NATL SEMICOND DISCRETE SEE D • bS0113Q 0D37773 S ■ T -Z 7 -0 Ì NPN General Purpose Transistors by Ascending Vceo (continued) lc /V < * (m A /V ) Ft (MHz) Min 600 120 300 120 300 300 300 10/10 150/10 150/10 150/10 150/10 50/2.0 150/10 700 250 250 250


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    PDF bS0113Q 0D37773 PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 2N1613 PN222A 2N2222A TO-92 2N3904 TO-92 type to236 2N2222A

    2N2905 2N2219

    Abstract: FT3904 2N1711A 2N295 2N33 2N2905 2N2222JAN 2N3135
    Text: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) h FE V CEO VcE(sat) <V C E R > VO LTS TYPE MIN 2N957 20 2N2959 hpE @ MIN - MAX 45 lc mA VOLTS @ lc


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    PDF 2N957 2N2959 2N3116 2IM2958 2N3115 2N916 2N703 2N1986 2N2195 2N2195A 2N2905 2N2219 FT3904 2N1711A 2N295 2N33 2N2905 2N2222JAN 2N3135

    PN222A

    Abstract: 2N2222A TO-92 BSR14 2N3904 TO-92 type PN544 TN2219 2NS904 MPS6574 NPN transistor 2N2222A in T0-92 package Transistor 2N2222A
    Text: NATL SEMICOND DISCRETE SEE D • bSQ113Q 0D37773 S ■ T-Z7-0! NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Min V Cbo(V) Min Min Max Ic/V c (mA/V) Ft (MHz) Min PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 30 30 30 30 30 30 30


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    PDF bS01130 0D37773 PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 O-237 PN222A 2N2222A TO-92 BSR14 2N3904 TO-92 type PN544 2NS904 MPS6574 NPN transistor 2N2222A in T0-92 package Transistor 2N2222A

    2n3946 npn transistor

    Abstract: 2N915 TQ-206AA
    Text: MOTOROLA SC XSTRS/R 15E F I b3b?ES4 {3Gflb52*i 7 | rW-oi 2N915 CASE 22-03, STYLE 1 TO-18 TQ-206AA MAXIM UM RATINGS Sym bol Value U nit Coliector-Emitter Voltage Rating VcEO 50 Vde Collector-Base Voltage VcBO 70 Vdo Emitter-Base Voltage Vebo 5.0 Total Device Dissipation @


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    PDF 3Gflb52 2N915 TQ-206AA) 2N3946 2n3946 npn transistor 2N915 TQ-206AA

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO bvebo h FE ICBO @ VCBO V (V) (V) (|iA) MIN MIN MIN MAX ICES "ICEV @ic (itlA) (V) NF ton toff (PF) (MHZ) (dB) (ns) (ns) @ VCE VCE(SA T) @ IC Cob (V) MIN MAX 00 (ItlA) MAX MAX it MIN MAX MAX MAX


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    PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A

    MPQ3904

    Abstract: 65 k82 2n3946 npn transistor 2N3903 2N3904 2N3946 2N3904 transistor equivalent to
    Text: MPQ3904 SILICON Q U A D D U A L-IN -L IN E QUAD D U A L IN LIN E NPNSILCON A M PLIFIER/SW ITC H TRA N SISTO R NPN S IL IC O N A N N U L A R A M P L IF IE R / S W IT C H T R A N S IS T O R . . . designed for low current am plifier and switching applications.


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    PDF MPQ3904 2N3903, 2N3904, 2N3946 O-116 300ns-H MPQ3904 65 k82 2n3946 npn transistor 2N3903 2N3904 2N3904 transistor equivalent to

    2n744

    Abstract: LM3661TL-1.40
    Text: Small signal Transistors TO-18 Case T Y P E NO. DESC RIPTIO N 00 V (V) (HA) MIN MIN MIN MAX *IC ES " IC E V @ 1C @ V C E V C E(SAT ) @ «C Cob hFE B V C B O B V C EO B V e b O C B O * V C B O <raA) (V) MIN M AX (V) (V) (mA) (PF) M AX M AX ton toff (ns) IT


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    PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A 2n744 LM3661TL-1.40

    PN544

    Abstract: TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101
    Text: This NPN Transistors NATL @ . VCE SAT VBE(SAT) (V) (V) c Max Min Max v * C0b (PF) Max * ‘ off (ns) Max NF (dB) Max hFE Min Max 5 500 18 75 225 2 4.5 18 5 500 18 75 225 2 4.5 25 25 5 100 25 90 180 2 (1 kHz) 10 10 10 TO-92 (94) 25 25 5 100 25 150 300


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    PDF T-29-Of T-29-01 PN544 TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101

    ST3904

    Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712
    Text: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.


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    PDF

    100ria

    Abstract: 25V6K RN5305 2N4494
    Text: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V


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    PDF 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 100ria 25V6K RN5305 2N4494